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PDF NE76184AS Data sheet ( Hoja de datos )
| Número de pieza | NE76184AS | |
| Descripción | GENERAL PURPOSE L TO X-BAND GaAs MESFET | |
| Fabricantes | NEC | |
| Logotipo |  |
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GENERAL PURPOSE NE76184AS
L TO X-BAND GaAs MESFET
FEATURES
• LOW NOISE FIGURE:
0.8 dB typical at 4 GHz
• HIGH ASSOCIATED GAIN:
12 dB typical at 4 GHz
• LG = 1.0 µm, WG = 400 µm
• LOW COST METAL/CERAMIC PACKAGE
• TAPE & REEL PACKAGING OPTION AVAILABLE
DESCRIPTION
NE76184AS is a high performance gallium arsenide metal
semiconductor field effect transistor housed in an epoxy-
sealed, metal/ceramic package. Its low noise figure makes
this device appropriate for use in the second or third stages of
low noise amplifiers operating in the 1-12 GHz frequency
range. The device is fabricated using ion implantation for
improved RF and DC performance, reliability, and uniformity.
The NE76184AS is suitable for DBS, TVRO, GPS and other
commercial applications.
NEC's stringent quality assurance and test procedures en-
sure the highest reliability and performance.
NOISE FIGURE & ASSOCIATED
GAIN vs. FREQUENCY
VDS = 3 V, IDS = 10 mA
4
3.5
GA
3
2.5
2
1.5
1
NF
0.5
0
1
10
Frequency, f (GHz)
20
24
21
18
15
12
9
6
3
0
ELECTRICAL CHARACTERISTICS (TA = 25°C)
SYMBOL
NF1
GA1
P1dB
G1dB
IDSS
VP
gm
IGSO
RTH
PART NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
Noise Figure at VDS = 3 V, ID = 10 mA, f = 4 GHz
Associated Gain at VDS = 3 V, ID = 10 mA, f = 4 GHz
Output Power at 1 dB Gain Compression Point, f = 4 GHz
VDS = 3 V, IDS = 10 mA
VDS = 3 V, IDS = 30 mA
Gain at P1dB, f = 4 GHz
VDS = 3 V, IDS = 10 mA
VDS = 3 V, IDS = 30 mA
Saturated Drain Current at VDS = 3 V, VGS = 0
Pinch Off Voltage at VDS = 3 V, ID = 100 µA
Transconductance at VDS = 3 V, ID = 10 mA
Gate to Source Leak Current at VGS = -5 V
Thermal Resistance
UNITS
dB
dB
dBm
dBm
dB
dB
mA
V
mS
µA
°C/W
NE76184AS
84AS
MIN TYP MAX
0.8 1.4
12.0
12.5
15.0
11.5
13.5
30 60 100
-3.0 -1.1 -0.5
20 45
10
300
Note:
1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually
measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line
as a "go-no-go" screening test with the fixture tuned for the "generic" type but not for each specimen.
California Eastern Laboratories
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet NE76184AS.PDF ] | |
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