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C122B1 PDF даташит

Спецификация C122B1 изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «(C122B1 / C122F1) Silicon Controlled Rectifiers Reverse Blocking Thyristors».

Детали детали

Номер произв C122B1
Описание (C122B1 / C122F1) Silicon Controlled Rectifiers Reverse Blocking Thyristors
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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C122B1 Даташит, Описание, Даташиты
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C122F1, C122B1
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for full-wave ac control applications, such as
motor controls, heating controls and power supplies; or wherever
half−wave silicon gate−controlled, solid−state devices are needed.
Features
Glass Passivated Junctions and Center Gate Fire for Greater
Parameter Uniformity and Stability
Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
Blocking Voltage to 200 Volts
Pb−Free Packages are Available*
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive Off−State Voltage
(Note 1) (TJ = 25 to 100°C, Sine Wave,
50 to 60 Hz; Gate Open)
C122F1
C122B1
VDRM,
VRRM
50
200
V
On-State RMS Current
(180° Conduction Angles; TC = 75°C)
IT(RMS)
8.0
A
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave, 60 Hz,
TC = 75°C)
Circuit Fusing Considerations (t = 8.3 ms)
ITSM
I2t
90 A
34 A2s
Forward Peak Gate Power
(Pulse Width = 10 ms, TC = 70°C)
PGM
5.0 W
Forward Average Gate Power
(t = 8.3 ms, TC = 70°C)
PG(AV)
0.5
W
Forward Peak Gate Current
(Pulse Width = 10 ms, TC = 70°C)
IGM 2.0 A
Operating Junction Temperature Range
TJ −40 to +125 °C
Storage Temperature Range
Tstg −40 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
August, 2005 − Rev. 3
1
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SCRs
8 AMPERES RMS
50 thru 200 VOLTS
G
AK
MARKING
DIAGRAM
4
1
2
3
TO−220AB
CASE 221A
STYLE 3
A YW
C122F1G
AKA
A
Y
W
C122F1
G
AKA
= Assembly Location
= Year
= Work Week
= Device Code
= Pb−Free Package
= Diode Polarity
PIN ASSIGNMENT
1 Cathode
2 Anode
3 Gate
4 Anode
ORDERING INFORMATION
Device
C122F1
C122F1G
C122B1
Package
TO220AB
TO220AB
(Pb−Free)
TO220AB
Shipping
500 Units / Box
500 Units / Box
500 Units / Box
C122B1G
TO220AB
(Pb−Free)
500 Units / Box
Publication Order Number:
C122F1/D









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C122B1 Даташит, Описание, Даташиты
C122F1, C122B1
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering Purposes 1/8 in. from Case for 10 Seconds
RqJC
RqJA
TL
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM, Gate Open)
ON CHARACTERISTICS
TC = 25°C
TC = 125°C
IDRM, IRRM
Peak On−State Voltage (Note 2)
(ITM = 16 A Peak, TC = 25°C)
Gate Trigger Current (Continuous dc)
(VAK = 12 V, RL = 100 W)
TC = 25°C
TC = −40°C
Gate Trigger Voltage (Continuous dc)
(VAK = 12 V, RL = 100 W)
TC = 25°C
TC = −40°C
Gate Non−Trigger Voltage (Continuous dc)
(VAK = 12 V, RL = 100 W, TC = 125°C)
Holding Current
(VAK = 12 Vdc, Initiating Current = 200 mA, Gate Open) TC = 25°C
TC = −40°C
Turn-Off Time (VD = Rated VDRM)
(ITM = 8 A, IR = 8 A)
VTM
IGT
VGT
VGD
0.2
IH
−−
−−
tq − 50
DYNAMIC CHARACTERISTICS
Critical Rate−of−Rise of Off−State Voltage
dv/dt − 50
(VAK = Rated VDRM, Exponential Waveform, Gate Open, TC = 100°C)
2. Pulse Test: Pulse Width 1 ms, Duty Cycle 2%.
Max
1.8
62.5
260
Max
10
0.5
1.83
25
40
1.5
2.0
30
60
Unit
°C/W
°C/W
°C
Unit
mA
mA
V
mA
V
V
mA
ms
V/ms
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C122B1 Даташит, Описание, Даташиты
C122F1, C122B1
Voltage Current Characteristic of SCR
+ Current
Anode +
Symbol
VDRM
IDRM
VRRM
IRRM
VTM
IH
Parameter
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak On State Voltage
Holding Current
IRRM at VRRM
on state
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode −
VTM
IH
+ Voltage
IDRM at VDRM
Forward Blocking Region
(off state)
100
90
80
DC
70
CONDUCTION
ANGLE = 30°
60° 90°
120° 180°
0
360
CONDUCTION
ANGLE
60
012 34 5 6 78
IT(AV), AVERAGE ON−STATE FORWARD CURRENT (AMPERES)
Figure 1. Current Derating (Half−Wave)
100
95
CONDUCTION CONDUCTION
ANGLE
ANGLE
90 0 360
ONE CYCLE OF SUPPLY
85 FREQUENCY
80
CONDUCTION 120° 180° 240° 360°
75 ANGLE = 60°
70 RESISTIVE OR
65
INDUCTIVE LOAD.
50 TO 400 Hz
60
012 34 5 6 7
IT(AV), AVERAGE ON−STATE CURRENT (AMPERES)
Figure 2. Current Derating (Full−Wave)
8
14
RESISTIVE OR INDUCTIVE LOAD, 50 TO 400 Hz
12
DC
10
180°
8
6
CONDUCTION
ANGLE 30°
60° 90° 120°
4
2
0
01 2 3 4 5 6 7
IT(AV), AVERAGE ON−STATE CURRENT (AMPERES)
Figure 3. Maximum Power Dissipation
(Half−Wave)
8
10
240° 360°
8 180°
120°
CONDUCTION
6 ANGLE = 60°
CONDUCTION CONDUCTION
ANGLE
ANGLE
4
0 360
2 ONE CYCLE OF SUPPLY
FREQUENCY
RESISTIVE OR INDUCTIVE LOAD, 50 TO 400 Hz
0
01 2 3 4 5 6 7 8
IT(AV), AVERAGE ON−STATE CURRENT (AMPERES)
Figure 4. Maximum Power Dissipation
(Full−Wave)
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