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HN1B01FDW1T1 PDF даташит

Спецификация HN1B01FDW1T1 изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount».

Детали детали

Номер произв HN1B01FDW1T1
Описание Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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HN1B01FDW1T1 Даташит, Описание, Даташиты
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HN1B01FDW1T1
Complementary Dual
General Purpose
Amplifier Transistor
PNP and NPN Surface Mount
Features
High Voltage and High Current: VCEO = 50 V, IC = 200 mA
High hFE: hFE = 200X400
Moisture Sensitivity Level: 1
ESD Rating − Human Body Model: 3A
− Machine Model: C
Pb−Free Package is Available
http://onsemi.com
(6) (5) (4)
Q1 Q2
(1) (2)
(3)
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
Collector−Base Voltage
V(BR)CBO
60
Vdc
Collector−Emitter Voltage
V(BR)CEO
50
Vdc
Emitter−Base Voltage
V(BR)EBO
7.0
Vdc
Collector Current − Continuous
IC
200 mAdc
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Power Dissipation
PD
Junction Temperature
TJ
Storage Temperature
Tstg
Max
380
150
−55 to +150
Unit
mW
°C
°C
654
123
SC−74
CASE 318F
STYLE 3
MARKING DIAGRAM
R9 M
R9 = Device Code
M = Date Code
ORDERING INFORMATION
Device
Package Shipping
HN1B01FDW1T1 SC−74 3000/Tape & Reel
HN1B01FDW1T1G SC−74 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2005
March, 2005 − Rev. 2
Publication Order Number:
HN1B01FDW1T1/D









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HN1B01FDW1T1 Даташит, Описание, Даташиты
HN1B01FDW1T1
Q1: PNP
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Collector−Emitter Breakdown Voltage
(IC = 2.0 mAdc, IB = 0)
Collector−Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
Emitter−Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector−Base Cutoff Current
(VCB = 45 Vdc, IE = 0)
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
Collector−Emitter Cutoff Current
(VCE = 10 Vdc, IB = 0)
(VCE = 30 Vdc, IB = 0)
(VCE = 30 Vdc, IB = 0, TA = 80°C)
DC Current Gain (Note 1)
(VCE = 6.0 Vdc, IC = 2.0 mAdc)
Collector−Emitter Saturation Voltage
(IC = 100 mAdc, IB = 10 mAdc)
ICEO
hFE
VCE(sat)
Q2: NPN
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Collector−Emitter Breakdown Voltage
(IC = 2.0 mAdc, IB = 0)
V(BR)CEO
Collector−Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
V(BR)CBO
Emitter−Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
Collector−Base Cutoff Current
(VCB = 45 Vdc, IE = 0)
ICBO
Collector−Emitter Cutoff Current
(VCE = 10 Vdc, IB = 0)
(VCE = 30 Vdc, IB = 0)
(VCE = 30 Vdc, IB = 0, TA = 80°C)
DC Current Gain (Note 1)
(VCE = 6.0 Vdc, IC = 2.0 mAdc)
ICEO
hFE
Collector−Emitter Saturation Voltage
(IC = 100 mAdc, IB = 10 mAdc)
1. Pulse Test: Pulse Width 300 ms, D.C. 2%.
VCE(sat)
Min
−50
−60
−7.0
−200
−0.15
Min
50
60
7.0
200
0.15
Max
−0.1
−0.1
−2.0
−1.0
−400
−0.3
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
mAdc
mAdc
Vdc
Max Unit
− Vdc
− Vdc
− Vdc
0.1 mAdc
0.1 mAdc
2.0 mAdc
1.0 mAdc
400 −
0.25 Vdc
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HN1B01FDW1T1 Даташит, Описание, Даташиты
HN1B01FDW1T1
Typical Electrical Characteristics: PNP Transistor
−200
−160
−2.0 mA
−1.5 mA
−1.0 mA
1000
TA = 100°C
−120
−80
−40
0
0
−0.5 mA
IB = −0.2 mA
TA = 25°C
−1 −2 −3 −4 −5
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Collector Saturation Region
−6
25°C
−25°C
100
VCE = −1.0 V
10
−1 −10
−100
IC, COLLECTOR CURRENT (mA)
Figure 2. DC Current Gain
−1000
1000
100
TA = 100°C
25°C
−25°C
−1
IC/IB = 10
−0.1
25°C
TA = 100°C
−25°C
10
−1
VCE = −6.0 V
−10 −100
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
−0.01
−1000
−1
−10 −100
IC, COLLECTOR CURRENT (mA)
Figure 4. VCE(sat) versus IC
−1000
−10
−1
−0.1
−1
−10,000
−1000
COMMON EMITTER
VCE = 6 V
−100
TA = 100°C
25°C
−25°C
−10
TA = 25°C
IC/IB = 10
−10 −100
IC, COLLECTOR CURRENT (mA)
Figure 5. VBE(sat) versus IC
−1000
−1
−0.1
0 −0.1 −0.2 −0.3 −0.4 −0.5 −0.6 −0.7 −0.8 −0.9 −1
VBE, BASE−EMITTER VOLTAGE (V)
Figure 6. Base−Emitter Voltage
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Номер в каталогеОписаниеПроизводители
HN1B01FDW1T1Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface MountON Semiconductor
ON Semiconductor

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