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PDF NCV33152 Data sheet ( Hoja de datos )
| Número de pieza | NCV33152 | |
| Descripción | HIGH SPEED DUAL MOSFET DRIVERS | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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MC34152, MC33152,
NCV33152
High Speed Dual
MOSFET Drivers
The MC34152/MC33152 are dual noninverting high speed drivers
specifically designed for applications that require low current digital
signals to drive large capacitive loads with high slew rates. These
devices feature low input current making them CMOS/LSTTL logic
compatible, input hysteresis for fast output switching that is
independent of input transition time, and two high current totem pole
outputs ideally suited for driving power MOSFETs. Also included is
an undervoltage lockout with hysteresis to prevent system erratic
operation at low supply voltages.
Typical applications include switching power supplies, dc−to−dc
converters, capacitor charge pump voltage doublers/inverters, and
motor controllers.
This device is available in dual−in−line and surface mount packages.
Features
• Pb−Free Packages are Available
• Two Independent Channels with 1.5 A Totem Pole Outputs
• Output Rise and Fall Times of 15 ns with 1000 pF Load
• CMOS/LSTTL Compatible Inputs with Hysteresis
• Undervoltage Lockout with Hysteresis
• Low Standby Current
• Efficient High Frequency Operation
• Enhanced System Performance with Common Switching Regulator
Control ICs
• NCV Prefix for Automotive and Other Applications Requiring Site
and Control Changes
VCC 6
+
−
5.7V
Logic
Input A 2
Drive Output A
7
100k
http://onsemi.com
8
1
8
1
MARKING
DIAGRAMS
PDIP−8
P SUFFIX
CASE 626
8
MC3x152P
AWL
YYWW
1
SOIC−8
D SUFFIX
CASE 751
8
3x152
ALYW
1
x = 3 or 4
A = Assembly Location
WL, L = Wafer Lot
YY, Y = Year
WW, W = Work Week
PIN CONNECTIONS
N.C. 1
Logic Input A 2
GND 3
Logic Input B 4
8 N.C.
7 Drive Output A
6 VCC
5 Drive Output B
(Top View)
Logic
Input B 4
Drive Output B
5
100k
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
GND 3
Figure 1. Representative Diagram
© Semiconductor Components Industries, LLC, 2004
October, 2004 − Rev. 7
1
Publication Order Number:
MC34152/D
1 page  
90% −
10% −
MC34152, MC33152, NCV33152
VCC = 12 V
Vin = 0 V to 5.0 V
CL = 1.0 nF
TA = 25°C
Drive Output
Logic Input
50 ns/DIV
Figure 8. Propagation Delay
3.0 High State Clamp (Drive
Output Driven Above VCC)
2.0
1.0
VCC
0
VCC = 12 V
80 ms Pulsed Load
120 Hz Rate
TA = 25°C
0
−1.0
0
Low State Clamp (Drive
GND Output Driven Below Ground)
0.2 0.4 0.6 0.8 1.0 1.2
IO, OUTPUT CLAMP CURRENT (A)
Figure 9. Drive Output Clamp Voltage
versus Clamp Current
1.4
0
−1.0
VCC
Source Saturation VCC = 12 V
(Load to Ground) 80 ms Pulsed Load
120 Hz Rate
−2.0 TA = 25°C
−3.0
3.0
2.0
1.0
0
0
Sink Saturation
(Load to VCC)
GND
0.2 0.4 0.6 0.8 1.0 1.2 1.4
IO, OUTPUT CLAMP CURRENT (A)
Figure 10. Drive Output Saturation Voltage
versus Load Current
0
−0.5
Source Saturation
(Load to Ground) VCC
−0.7 VCC = 12 V
−0.9
−1.1
Isource = 10 mA
Isource = 400 mA
1.9
1.7 Isink = 400 mA
1.5
1.0
0.8 Isink = 10 mA
0.6
Sink Saturation
(Load to VCC)
GND
0−55 −25
0 25 50 75 100 125
TA, AMBIENT TEMPERATURE (°C)
Figure 11. Drive Output Saturation Voltage
versus Temperature
90% −
10% −
VCC = 12 V
Vin = 0 V to 5.0 V
CL = 1.0 nF
TA = 25°C
10 ns/DIV
Figure 12. Drive Output Rise Time
90% −
VCC = 12 V
Vin = 0 V to 5.0 V
CL = 1.0 nF
TA = 25°C
10% −
10 ns/DIV
Figure 13. Drive Output Fall Time
http://onsemi.com
5
5 Page 
MC34152, MC33152, NCV33152
PACKAGE DIMENSIONS
SOIC−8
D SUFFIX
CASE 751−07
ISSUE AC
−X−
A
B
−Y−
−Z−
H
85
S 0.25 (0.010) M Y M
1
4
K
G
D
C
SEATING
PLANE
N X 45_
0.10 (0.004)
M
0.25 (0.010) M Z Y S X S
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. 751−01 THRU 751−06 ARE OBSOLETE. NEW
STANDARD IS 751−07.
MILLIMETERS
INCHES
DIM MIN MAX MIN MAX
A 4.80 5.00 0.189 0.197
B 3.80 4.00 0.150 0.157
C 1.35 1.75 0.053 0.069
D 0.33 0.51 0.013 0.020
G 1.27 BSC 0.050 BSC
J H 0.10 0.25 0.004 0.010
J 0.19 0.25 0.007 0.010
K 0.40 1.27 0.016 0.050
M 0_ 8_ 0_ 8_
N 0.25 0.50 0.010 0.020
S 5.80 6.20 0.228 0.244
SOLDERING FOOTPRINT*
7.0
0.275
1.52
0.060
4.0
0.155
0.6
0.024
1.270
0.050
ǒ ǓSCALE 6:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet NCV33152.PDF ] | |
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