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даташит 50N06 PDF ( Datasheet )

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Номер произв 50N06
Описание N-CHANNEL POWER MOSFET
Производители Unisonic Technologies
логотип Unisonic Technologies логотип 



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50N06 Даташит, Описание, Даташиты
UNISONIC TECHNOLOGIES CO., LTD
50N06
MOSFET
50 Amps, 60 Volts
N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 50N06 is three-terminal silicon device with current
conduction capability of about 50A, fast switching speed. Low
on-state resistance, breakdown voltage rating of 60V, and max
threshold voltages of 4 volt.
It is mainly suitable electronic ballast, and low power switching
mode power appliances.
1
TO-220
1
TO-220F
FEATURES
* RDS(ON) = 23m@VGS = 10 V
* Ultra low gate charge ( typical 30 nC )
* Low reverse transfer Capacitance ( CRSS = typical 80 pF )
* Fast switching capability
* 100% avalanche energy specified
* Improved dv/dt capability
SYMBOL
2.Drain
www.DataSheet4U.com
*Pb-free plating product number: 50N06L
1.Gate
3.Source
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
50N06-TA3-T
50N06L-x-TA3-T
50N06-TF3-T
50N06L-x-TF3-T
Package
TO-220
TO-220F
Pin Assignment
123
GDS
GDS
Packing
Tube
Tube
50N06L-TA3-T
(1)Packing Type
(2)Package Type
(3)Lead Plating
(1) T: Tube
(2) TA3: TO-220, TF3: TO-220F
(3) L: Lead Free Plating, Blank: Pb/Sn
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
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50N06 Даташит, Описание, Даташиты
50N06
MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
60
V
Gate to Source Voltage
Continuous Drain Current
Drain Current Pulsed (Note 1)
TC = 25
TC = 100
VGSS
ID
IDM
±20
50
35
200
V
A
A
A
Single Pulsed Avalanche Energy (Note 2)
Repetitive Avalanche Energy (Note 1)
EAS 480 mJ
EAR 13 mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
7 V/ns
Total Power Dissipation (TC = 25 )
Derating Factor above 25
PD
130 W
0.9 W/
Operation Junction Temperature
TJ -55 ~ +150
Storage Temperature
TSTG
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
SYMBOL
θJC
θCS
θJA
MIN
TYP
0.5
MAX
1.15
62.5
UNIT
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS TC = 25 unless otherwise specified
PARAMETER
Off Characteristics
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate-Source Leakage Reverse
On Characteristics
Gate Threshold Voltage
Static Drain-Source On-State
Resistance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Dynamic Characteristics
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge (Miller Charge)
SYMBOL
TEST CONDITIONS
BVDSS VGS = 0 V, ID = 250 µA
BVDSS/
TJ
ID = 250 µA,
Referenced to
25
IDSS
VDS = 60 V, VGS = 0 V
VDS = 48 V, TC = 125
IGSS
VGS = 20V, VDS = 0 V
VGS = -20V, VDS = 0 V
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 25 A
CISS
COSS
CRSS
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
VGS = 0 V, VDS = 25 V
f = 1MHz
VDD = 30V, ID =25 A,
RG = 50(Note 4, 5)
VDS = 48V, VGS = 10 V
ID = 50A, (Note 4, 5)
MIN TYP MAX UNIT
60 V
0.07 V/
1
100
-100
µA
µA
nA
nA
2.0 4.0 V
18 23 m
900 1220
430 550
80 100
pF
pF
pF
40 60
100 200
90 180
80 160
30 40
9.6
10
ns
ns
ns
ns
nC
nC
nC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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50N06 Даташит, Описание, Даташиты
50N06
MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Source-Drain Diode Ratings and Characteristics
Diode Forward Voltage
VSD IS = 50A, VGS = 0 V
Continuous Source Current
Integral Reverse p-n Junction Diode in the
IS MOSFET
D
1.5 V
50
Pulsed Source Current
ISM
G
A
200
S
Reverse Recovery Time
tRR IS = 50A, VGS = 0 V
Reverse Recovery Charge
QRR dIF / dt = 100 A/µs
Note 1. Repeativity rating: pulse width limited by junction temperature
2. L=5.6mH, IAS=50A, VDD=25V, RG=0, Starting TJ=25
3. ISD50A, di/dt300A/µs, VDDBVDSS, Starting TJ=25
4. Pulse Test: Pulse Width300µs,Duty Cycle2%
5. Essentially independent of operating temperature.
54 ns
81 µC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-088,A










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