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2SA1740 PDF даташит

Спецификация 2SA1740 изготовлена ​​​​«Unisonic Technologies» и имеет функцию, называемую «PNP SILICON TRANSISTOR».

Детали детали

Номер произв 2SA1740
Описание PNP SILICON TRANSISTOR
Производители Unisonic Technologies
логотип Unisonic Technologies логотип 

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2SA1740 Даташит, Описание, Даташиты
UNISONIC TECHNOLOGIES CO., LTD
2SA1740
PNP SILICON TRANSISTOR
HIGH VOLTAGE DRIVER
APPLICATION
FEATURES
*High breakdown voltage.
*Excellent hFE linearity.
ORDERING INFORMATION
Ordering Number
2SA1740G-x-AB3-R
Note: Pin Assignment: B: Base C: Collector E: Emitter
Package
SOT-89
Pin Assignment
123
BCE
Packing
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 5
QW-R204-026.E









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2SA1740 Даташит, Описание, Даташиты
2SA1740
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-400
V
Collector-Emitter Voltage
VCEO
-400
V
Emitter-Base Voltage
VEBO -5 V
Collector Current
IC
-200
mA
Collector Current (PULSE)
ICP
-400
mA
Collector Power Dissipation
PC 0.5 W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
Collect-Base Breakdown Voltage
Collect-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collect-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
Reverse Transfer Capacitance
Gain-Bandwidth Product
Turn-On Time
Turn-Off Time
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE(SAT)
VBE(SAT)
COB
CRE
fT
tON
tOFF
CLASSIFICATION OF hFE
TEST CONDITIONS
IC= -10A,IE=0
IC= -1mA,IB=0, RBE=
IE= -10A,IC=0
VCB= -300V,IE=0
VEB= -4V,IC=0
VCE= -10V, Ic= -50mA
IC= -50mA,IB= -5mA
IC= -50mA,IB= -5mA
VCB=-30V, f=1MHz
VCB =-30V,f=1MHz
VCE= -30V,IC= -10mA
See test circuit
See test circuit
MIN TYP MAX UNIT
-400
V
-400
V
-5 V
-0.1 A
-0.1 A
60 200
-0.8 V
-1.0 V
5 pF
4 pF
70 MHz
0.25 s
5.0 s
RANK
RANGE
D
60-120
E
100-200
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R208-026.E









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2SA1740 Даташит, Описание, Даташиты
2SA1740
TEST CIRCUIT
PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 5
QW-R208-026.E










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