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Número de pieza | NTHS4101P | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
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No Preview Available ! NTHS4101P
Power MOSFET
−20 V, 6.7 A, P−Channel ChipFETt
Features
• Offers an Ultra Low RDS(on) Solution in the ChipFET Package
• Miniature ChipFET Package 40% Smaller Footprint than TSOP−6
making it an Ideal Device for Applications where Board Space is at a
Premium
• Low Profile (<1.1 mm) Allows it to Fit Easily into Extremely Thin
Environments such as Portable Electronics
• Designed to Provide Low RDS(on) at Gate Voltage as Low as 1.8 V, the
Operating Voltage used in many Logic ICs in Portable Electronics
• Simplifies Circuit Design since Additional Boost Circuits for Gate
Voltages are not Required
• Operated at Standard Logic Level Gate Drive, Facilitating Future
Migration to Lower Levels using the same Basic Topology
• Pb−Free Package is Available
Applications
• Optimized for Battery and Load Management Applications in
Portable Equipment such as MP3 Players, Cell Phones, Digital
Cameras, Personal Digital Assistant and other Portable Applications
• Charge Control in Battery Chargers
• Buck and Boost Converters
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MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Drain Current − Continuous
− 5 seconds
VDSS
VGS
ID
ID
−20
"8.0
−4.8
−6.7
Vdc
Vdc
A
Total Power Dissipation
Continuous @ TA = 25°C
(5 sec) @ TA = 25°C
Continuous @ 85°C
(5 sec) @ 85°C
PD W
1.3
2.5
0.7
1.3
Pulsed Drain Current − tp = 10 ms
Continuous Source Current
IDM
−190
A
Is −4.8 A
Thermal Resistance (Note 1)
Junction−to−Ambient, 5 sec
Junction−to−Ambient, Continuous
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
RqJA
RqJA
TL
°C/W
50
95
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.27 in sq
[1 oz] including traces).
http://onsemi.com
V(BR)DSS
−20 V
RDS(on) TYP
21 mW @ −4.5 V
30 mW @ −2.5 V
42 mW @ −1.8 V
S
ID MAX
−6.7 A
G
D
P−Channel MOSFET
8
1
PIN
CONNECTIONS
ChipFET
CASE 1206A
STYLE 1
MARKING
DIAGRAM
D8
D7
D6
S5
1D
2D
3D
4G
1
2
3
4
8
7
6
5
C6 = Specific Device Code
M = Month Code
G = Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping†
NTHS4101PT1 ChipFET 3000 Tape / Reel
NTHS4101PT1G
ChipFET
(Pb−free)
3000 Tape / Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2007
February, 2007 − Rev. 3
1
Publication Order Number:
NTHS4101P/D
1 page NTHS4101P
PACKAGE DIMENSIONS
ChipFETt
CASE 1206A−03
ISSUE H
HE
e1
D
8765
1234
E
b
e
q
c
L
5678
4321
A
0.05 (0.002)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MOLD GATE BURRS SHALL NOT EXCEED 0.13 MM PER SIDE.
4. LEADFRAME TO MOLDED BODY OFFSET IN HORIZONTAL
AND VERTICAL SHALL NOT EXCEED 0.08 MM.
5. DIMENSIONS A AND B EXCLUSIVE OF MOLD GATE BURRS.
6. NO MOLD FLASH ALLOWED ON THE TOP AND BOTTOM LEAD
SURFACE.
MILLIMETERS
DIM MIN
NOM MAX
A 1.00
1.05
1.10
b 0.25
0.30
0.35
c 0.10 0.15 0.20
D 2.95
3.05
3.10
E 1.55
1.65
1.70
e 0.65 BSC
e1 0.55 BSC
L 0.28
0.35
0.42
H E 1.80
1.90
2.00
q 5° NOM
MIN
0.039
0.010
0.004
0.116
0.061
0.011
0.071
INCHES
NOM
0.041
0.012
0.006
0.120
0.065
0.025 BSC
0.022 BSC
0.014
0.075
5° NOM
MAX
0.043
0.014
0.008
0.122
0.067
0.017
0.079
STYLE 1:
PIN 1. DRAIN
2. DRAIN
3. DRAIN
4. GATE
5. SOURCE
6. DRAIN
7. DRAIN
8. DRAIN
2.032
1 0.08
SOLDERING FOOTPRINTS*
1
2.032
0.08
2.362
0.093
0.635
0.025
PITCH
2.362
0.093
1.727
0.068
0.457
8X
0.018
8X
0.66
0.026
Basic
ǒ mm Ǔ
inches
0.457
2X 0.018
2X
0.66
0.026
Style 1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ǒ mm Ǔ
inches
http://onsemi.com
5
5 Page |
Páginas | Total 6 Páginas | |
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