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Número de pieza | NTJD2152P | |
Descripción | Trench Small Signal MOSFET | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
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No Preview Available ! NTJD2152P
Trench Small Signal
MOSFET
8 V, Dual P−Channel, SC−88
ESD Protection
Features
• Leading –8 V Trench for Low RDS(ON) Performance
• ESD Protected Gate
• Small Footprint (2 x 2 mm)
• Same Package as SC−70−6
• Pb−Free Packages are Available
Applications
• Load Power switching
• DC−DC Conversion
• Li−Ion Battery Charging Circuits
• Cell Phones, Media Players, Digital Cameras, PDAs
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current
(Based on RqJA)
Power Dissipation
(Based on RqJA)
Continuous Drain
Current
(Based on RqJL)
Power Dissipation
(Based on RqJL)
Pulsed Drain Current
Steady
State
Steady
State
Steady
State
Steady
State
TA = 25 °C
TA = 85 °C
TA = 25 °C
TA = 85 °C
TA = 25 °C
TA = 85 °C
TA = 25 °C
TA = 85 °C
t ≤10 ms
Operating Junction and Storage Temperature
VDSS
VGS
ID
PD
ID
PD
IDM
TJ,
TSTG
−8.0 V
ww±w8.D.0ataSheet4UV.com
−0.775 A
−0.558
0.27 W
0.14
−1.1 A
−0.8
0.55 W
0.29
±1.2
−55 to
150
A
°C
Continuous Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
IS −0.775 A
TL 260 °C
THERMAL RESISTANCE RATINGS (Note 1)
Parameter
Symbol Typ Max Unit
Junction−to−Ambient – Steady State
RqJA
400 460 °C/W
Junction−to−Lead (Drain) – Steady State
RqJL
194 226
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 oz Cu area = 0.9523 in sq.
http://onsemi.com
V(BR)DSS
−8 V
RDS(on) TYP
0.22 W @ −4.5 V
0.32 W @ −2.5 V
0.51 W @ −1.8 V
ID Max
−0.775 A
SOT−363
SC−88 (6 LEADS)
S1 1
6 D1
G1 2
5 G2
D2 3
4 S2
Top View
MARKING DIAGRAM &
PIN ASSIGNMENT
D1 G2 S2
1
SC−88/SOT−363
CASE 419B
STYLE 28
6
TA M G
G
1
S1 G1 D2
TA = Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 3
1
Publication Order Number:
NTJD2152/D
1 page NTJD2152P
ORDERING INFORMATION
Device Order Number
Package Type
Tape and Reel Size†
NTJD2152PT1
SOT−363
3000 / Tape & Reel
NTJD2152PT1G
SOT−363
(Pb−Free)
3000 / Tape & Reel
NTJD2152PT2
SOT−363
3000 / Tape & Reel
NTJD2152PT2G
SOT−363
(Pb−Free)
3000 / Tape & Reel
NTJD2152PT4
SOT−363
10,000 / Tape & Reel
NTJD2152PT4G
SOT−363
(Pb−Free)
10,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifi-
cations Brochure, BRD8011/D.
http://onsemi.com
5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet NTJD2152P.PDF ] |
Número de pieza | Descripción | Fabricantes |
NTJD2152P | Trench Small Signal MOSFET | ON Semiconductor |
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