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NTLJD4150P PDF даташит

Спецификация NTLJD4150P изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )».

Детали детали

Номер произв NTLJD4150P
Описание Power MOSFET ( Transistor )
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NTLJD4150P Даташит, Описание, Даташиты
NTLJD4150P
Power MOSFET
−30 V, −3.4 A, mCoolt Dual P−Channel,
2x2 mm WDFN Package
Features
WDFN 2x2 mm Package Provides Exposed Drain Pad for
Excellent Thermal Conduction
Footprint Same as SC−88 Package
Low Profile (< 0.8 mm) for Easy Fit in Thin Environments
Bidirectional Current Flow with Common Source Configuration
This is a Pb−Free Device
Applications
Li−Ion Battery Charging and Protection Circuits
LED Backlight, Flashlight
Dual−High Side Load Switch
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current
(Note 1)
Power Dissipation
(Note 1)
Steady
State
t5s
Steady
State
t5s
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
VDSS
VGS
ID
PD
−30 V
±20 V
www.D2a.t7aSheet4UA.com
−2.0
−3.4
1.5 W
2.3
Continuous Drain Current
(Note 2)
Power Dissipation
(Note 2)
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
ID
PD
−1.8
−1.4
0.7
A
W
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
IDM
TJ,
TSTG
−14
−55 to
150
A
°C
Source Current (Body Diode) (Note 2)
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
IS −1.8 A
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size.
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V(BR)DSS
−30 V
RDS(on) Max
135 mW @ 10 V
200 mW @ 4.5 V
ID Max (Note 1)
−3.4 A
S1 S2
G1 G2
D1 D2
P−CHANNEL MOSFET P−CHANNEL MOSFET
D2 D1
Pin 1
WDFN6
CASE 506AN
MARKING
DIAGRAM
1 JE M G 6
2
3
G
5
4
JE = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
PIN CONNECTIONS
S1 1
D1
6 D1
G1 2
D2 3
D2
5 G2
4 S2
(Top View)
ORDERING INFORMATION
Device
Package
Shipping
NTLJD4150PTBG WDFN6 3000 / Tape &
(Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D
© Semiconductor Components Industries, LLC, 2007
January, 2007 − Rev. 0
1
Publication Order Number:
NTLJD4150P/D









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NTLJD4150P Даташит, Описание, Даташиты
NTLJD4150P
THERMAL RESISTANCE RATINGS
Parameter
SINGLE OPERATION (SELF−HEATED)
Symbol
Junction−to−Ambient – Steady State (Note 3)
Junction−to−Ambient – Steady State Min Pad (Note 4)
Junction−to−Ambient – t 5 s (Note 3)
DUAL OPERATION (EQUALLY HEATED)
RqJA
RqJA
RqJA
Junction−to−Ambient – Steady State (Note 3)
RqJA
Junction−to−Ambient – Steady State Min Pad (Note 3)
RqJA
Junction−to−Ambient – t 5 s (Note 3)
RqJA
3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
4. Surface Mounted on FR4 Board using the minimum recommended pad size (30 mm2, 2 oz Cu).
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = −250 mA
ID = −250 mA, Ref to 25°C
Min
−30.0
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Gate Threshold
Temperature Coefficient
IDSS
IGSS
VDS = −24 V, VGS = 0 V
TJ = 25°C
TJ = 85°C
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS(TH)/TJ
VGS = VDS, ID = −250 mA
−1.0
Drain−to−Source On−Resistance
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCES AND GATE RESISTANCE
VGS = −10 V, ID = −4.0 A
VGS = −4.5 V, ID = −3.0 A
VDS = −10 V, ID = −1.0 A
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Gate Resistance
RG
SWITCHING CHARACTERISTICS (Note 6)
VGS = 0 V, f = 1 MHz, VDS = −15 V
VGS =−4.5 V, VDS = −15 V, ID = −2.0 A
Turn−On Delay Time
td(ON)
Rise Time
Turn−Off Delay Time
tr
td(OFF)
VGS = −4.5 V, VDD = −24 V,
ID = −3.0 A, RG = 2 W
Fall Time
tf
5. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
Max Unit
83
177 °C/W
54
58
133 °C/W
40
Typ Max Unit
V
1.9 mV/°C
−1.0
−5.0
±100
mA
nA
−1.5
0.4
95
156
1.5
−2.0 V
mV/°C
135 mW
200 mW
S
300
50
30
3.6 4.5
0.44
0.79
1.54
10.6
pF
nC
W
7.0 ns
16.2
11.8
8.8
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NTLJD4150P Даташит, Описание, Даташиты
NTLJD4150P
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (continued)
Parameter
Symbol
Test Conditions
Min
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Recovery Voltage
VSD
VGS = 0 V,
TJ = 25°C
IS = −2.0 A
TJ = 85°C
Reverse Recovery Time
tRR
Charge Time
Discharge Time
ta VGS = 0 V, dISD/dt = 100 A/ms,
tb IS = −2.0 A
Reverse Recovery Time
QRR
5. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
Typ
−0.85
−0.77
8.9
6.2
2.9
3.0
Max
−1.0
Unit
V
ns
nC
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