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NTLTS3107P PDF даташит

Спецификация NTLTS3107P изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )».

Детали детали

Номер произв NTLTS3107P
Описание Power MOSFET ( Transistor )
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NTLTS3107P Даташит, Описание, Даташиты
NTLTS3107P
Power MOSFET
20 V, 8.3 A, Single PChannel,
Micro8 Leadless Package
Features
Low RDS(on) for Extended Battery Life
Surface Mount Micro8 Leadless for Improved Thermal Performance
Low Profile (<1.0 mm) Optimal for Portable Designs
Low TurnOn Voltage
This is a PbFree Device
Applications
Optimized for Load Management Applications
Charge Control in Battery Powered Systems
Cell Phones, DSC, Notebooks, Portable Games, etc.
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain
Current (Note 1)
Steady State
Power Dissipation
(Note 1)
Continuous Drain
Current (Note 2)
t v 10 s
Steady State
t v 10 s
Steady State
Power Dissipation
(Note 2)
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
TA = 25°C
TA = 85°C
TA = 25°C
VDSS
VGS
ID
PD
ID
PD
20 V
$8.0
8.3
V
A
6.0
12
1.6 W
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3.3
5.9 A
3.7
0.8 W
Pulsed Drain
Current (Note 1)
tp = 10 ms
IDM 25 A
Operating Junction and Storage Temperature
TJ, TSTG 55 to °C
150
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8 in from case for 10 s)
IS 1.6 A
TL 260 °C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
JunctiontoAmbient – Steady State (Note 1)
RqJA
80 °C/W
JunctiontoAmbient – t v 10 s (Note 1)
RqJA
38 °C/W
JunctiontoAmbient – Steady State (Note 2)
RqJA
160 °C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surfacemounted on FR4 board using 1 sq. in. pad size
(Cu. area = 1.127 sq. in. [1 oz] including traces).
2. Surfacemounted on FR4 board using minimum recommended pad size
(Cu. area = TBD sq. in.).
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V(BR)DSS
20 V
RDS(on) TYP
12.2 mW @ 4.5 V
15.6 mW @ 2.5 V
26.2 mW @ 1.8 V
ID MAX
8.3 A
PChannel MOSFET
S
G
D
MARKING
DIAGRAM
1
Micro8 Leadless
CASE 846C
1 3107
AYWW
G
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
PIN ASSIGNMENT
Drain 8
Drain 7
Drain 6
Drain 5
Drain
1 Source
2 Source
3 Source
4 Gate
(Bottom View)
ORDERING INFORMATION
Device
Package
Shipping
NTLTS3107PR2G
Micro8
(PbFree)
2500/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2005
October, 2005 Rev. 0
1
Publication Order Number:
NTLTS3107P/D









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NTLTS3107P Даташит, Описание, Даташиты
NTLTS3107P
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
DraintoSource Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = 250 mA
Zero Gate Voltage Drain Current
GatetoSource Leakage Current
ON CHARACTERISTICS (Note 3)
IDSS
IGSS
VGS = 0 V,
VDS = 16 V
TJ = 25°C
VDS = 0 V, VGS = $8.0 V
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
DraintoSource On Resistance
VGS(TH)
VGS(TH)/TJ
RDS(on)
Forward Transconductance
CHARGES AND CAPACITANCES
gFS
VGS = VDS, ID = 250 mA
VGS = 4.5 V, ID = 8.0 A
VGS = 2.5 V, ID = 7.0 A
VGS = 1.8 V, ID = 5.8 A
VDS = 5 V, ID = 8.0 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
GatetoSource Gate Charge
GatetoDrain “Miller” Charge
SWITCHING CHARACTERISTICS (Note 4)
CISS
COSS
CRSS
QG(TOT)
QG(TH)
QGS
QGD
VGS = 0 V, f = 1 MHz,
VDS = 16 V
VGS = 4.5 V, VDS = 16 V,
ID = 8.0 A
TurnOn Delay Time
td(on)
Rise Time
tr
TurnOff Delay Time
td(off)
Fall Time
tf
DRAINSOURCE DIODE CHARACTERISTICS (Note 3)
VGS = 4.5 V, VDS = 10 V,
ID = 8.0 A, RG = 3.0 W
Forward Diode Voltage
VSD
VGS = 0 V,
TJ = 25°C
IS = 1.6 A
TJ = 125°C
Reverse Recovery Time
tRR
Charge Time
Discharge Time
ta VGS = 0 V, dIS/dt = 100 A/ms,
tb IS = 1.6 A
Reverse Recovery Charge
QRR
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
Min
20
0.45
Typ
11
3.4
12.2
15.6
26.2
25
4645
465
285
40
3.0
7.0
11
30
20
250
80
0.7
0.5
75
28
47
81.5
Max Unit
V
mV/°C
10 mA
±100
nA
1.2
16
21
V
mV/°C
mW
S
6500
650
400
60
pF
nC
ns
1.2
V
100 ns
nC
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NTLTS3107P Даташит, Описание, Даташиты
NTLTS3107P
32 VGS = 10 V
5V
24
16
8
4.5 V
4V
3.6 V
3.2 V
2.8 V
2.4 V
2V
0
1.2 V
1.8 V
0 2 4 6 8 10
VDS, DRAINTOSOURCE VOLTAGE (V)
Figure 1. OnRegion Characteristics
32
24
16
8 TJ = 125°C
TJ = 25°C
TJ = 55°C
0
024
VGS, GATETOSOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
6
0.026
VGS = 4.5 V
0.022
0.018
TJ = 125°C
0.014
0.01
0
TJ = 25°C
TJ = 55°C
5 10 15 20 25
ID, DRAIN CURRENT (A)
Figure 3. OnResistance versus
Drain Current and Temperature
0.026
VGS = 2.5 V
0.022
0.018
0.014
TJ = 125°C
TJ = 25°C
TJ = 55°C
0.01
30 0
5 10 15 20 25
ID, DRAIN CURRENT (A)
Figure 4. OnResistance versus
Drain Current and Temperature
30
0.02
0.019
TJ = 25°C
0.018
VGS = 2.5 V
0.017
0.016
VGS = 3.5 V
0.015
0.014
0
VGS = 4.5 V
6 12 18 24 30
ID, DRAIN CURRENT (A)
Figure 5. OnResistance versus Drain Current
and Gate Voltage
0.06
0.055
0.05
0.045
0.04
ID = 13.2 A
0.035
0.03
0.025
0.02 ID = 3.5 A
0.015
0.01
12345
VGS, GATETOSOURCE VOLTAGE (V)
Figure 6. OnResistance versus Gate Voltage
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NTLTS3107PPower MOSFET ( Transistor )ON Semiconductor
ON Semiconductor

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