NTLTS3107P PDF даташит
Спецификация NTLTS3107P изготовлена «ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )». |
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Детали детали
Номер произв | NTLTS3107P |
Описание | Power MOSFET ( Transistor ) |
Производители | ON Semiconductor |
логотип |
5 Pages
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NTLTS3107P
Power MOSFET
−20 V, −8.3 A, Single P−Channel,
Micro8 Leadless Package
Features
• Low RDS(on) for Extended Battery Life
• Surface Mount Micro8 Leadless for Improved Thermal Performance
• Low Profile (<1.0 mm) Optimal for Portable Designs
• Low Turn−On Voltage
• This is a Pb−Free Device
Applications
• Optimized for Load Management Applications
• Charge Control in Battery Powered Systems
• Cell Phones, DSC, Notebooks, Portable Games, etc.
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Steady State
Power Dissipation
(Note 1)
Continuous Drain
Current (Note 2)
t v 10 s
Steady State
t v 10 s
Steady State
Power Dissipation
(Note 2)
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
TA = 25°C
TA = 85°C
TA = 25°C
VDSS
VGS
ID
PD
ID
PD
−20 V
$8.0
−8.3
V
A
−6.0
−12
1.6 W
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3.3
−5.9 A
−3.7
0.8 W
Pulsed Drain
Current (Note 1)
tp = 10 ms
IDM −25 A
Operating Junction and Storage Temperature
TJ, TSTG −55 to °C
150
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8 in from case for 10 s)
IS −1.6 A
TL 260 °C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction−to−Ambient – Steady State (Note 1)
RqJA
80 °C/W
Junction−to−Ambient – t v 10 s (Note 1)
RqJA
38 °C/W
Junction−to−Ambient – Steady State (Note 2)
RqJA
160 °C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface−mounted on FR4 board using 1 sq. in. pad size
(Cu. area = 1.127 sq. in. [1 oz] including traces).
2. Surface−mounted on FR4 board using minimum recommended pad size
(Cu. area = TBD sq. in.).
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V(BR)DSS
−20 V
RDS(on) TYP
12.2 mW @ −4.5 V
15.6 mW @ −2.5 V
26.2 mW @ −1.8 V
ID MAX
−8.3 A
P−Channel MOSFET
S
G
D
MARKING
DIAGRAM
1
Micro8 Leadless
CASE 846C
1 3107
AYWW
G
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
PIN ASSIGNMENT
Drain 8
Drain 7
Drain 6
Drain 5
Drain
1 Source
2 Source
3 Source
4 Gate
(Bottom View)
ORDERING INFORMATION
Device
Package
Shipping†
NTLTS3107PR2G
Micro8
(Pb−Free)
2500/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2005
October, 2005 − Rev. 0
1
Publication Order Number:
NTLTS3107P/D
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NTLTS3107P
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = −250 mA
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
IDSS
IGSS
VGS = 0 V,
VDS = −16 V
TJ = 25°C
VDS = 0 V, VGS = $8.0 V
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
VGS(TH)
VGS(TH)/TJ
RDS(on)
Forward Transconductance
CHARGES AND CAPACITANCES
gFS
VGS = VDS, ID = −250 mA
VGS = −4.5 V, ID = −8.0 A
VGS = −2.5 V, ID = −7.0 A
VGS = −1.8 V, ID = −5.8 A
VDS = −5 V, ID = −8.0 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Gate Charge
Gate−to−Drain “Miller” Charge
SWITCHING CHARACTERISTICS (Note 4)
CISS
COSS
CRSS
QG(TOT)
QG(TH)
QGS
QGD
VGS = 0 V, f = 1 MHz,
VDS = −16 V
VGS = −4.5 V, VDS = −16 V,
ID = −8.0 A
Turn−On Delay Time
td(on)
Rise Time
tr
Turn−Off Delay Time
td(off)
Fall Time
tf
DRAIN−SOURCE DIODE CHARACTERISTICS (Note 3)
VGS = −4.5 V, VDS = −10 V,
ID = −8.0 A, RG = 3.0 W
Forward Diode Voltage
VSD
VGS = 0 V,
TJ = 25°C
IS = −1.6 A
TJ = 125°C
Reverse Recovery Time
tRR
Charge Time
Discharge Time
ta VGS = 0 V, dIS/dt = 100 A/ms,
tb IS = −1.6 A
Reverse Recovery Charge
QRR
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
Min
−20
−0.45
Typ
11
3.4
12.2
15.6
26.2
25
4645
465
285
40
3.0
7.0
11
30
20
250
80
−0.7
0.5
75
28
47
81.5
Max Unit
V
mV/°C
−10 mA
±100
nA
−1.2
16
21
V
mV/°C
mW
S
6500
650
400
60
pF
nC
ns
−1.2
V
100 ns
nC
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2
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NTLTS3107P
32 VGS = 10 V
5V
24
16
8
4.5 V
4V
3.6 V
3.2 V
2.8 V
2.4 V
2V
0
1.2 V
1.8 V
0 2 4 6 8 10
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
32
24
16
8 TJ = 125°C
TJ = 25°C
TJ = −55°C
0
024
−VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
6
0.026
VGS = −4.5 V
0.022
0.018
TJ = 125°C
0.014
0.01
0
TJ = 25°C
TJ = −55°C
5 10 15 20 25
−ID, DRAIN CURRENT (A)
Figure 3. On−Resistance versus
Drain Current and Temperature
0.026
VGS = −2.5 V
0.022
0.018
0.014
TJ = 125°C
TJ = 25°C
TJ = −55°C
0.01
30 0
5 10 15 20 25
−ID, DRAIN CURRENT (A)
Figure 4. On−Resistance versus
Drain Current and Temperature
30
0.02
0.019
TJ = 25°C
0.018
VGS = 2.5 V
0.017
0.016
VGS = 3.5 V
0.015
0.014
0
VGS = 4.5 V
6 12 18 24 30
−ID, DRAIN CURRENT (A)
Figure 5. On−Resistance versus Drain Current
and Gate Voltage
0.06
0.055
0.05
0.045
0.04
ID = 13.2 A
0.035
0.03
0.025
0.02 ID = 3.5 A
0.015
0.01
12345
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 6. On−Resistance versus Gate Voltage
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3
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NTLTS3107P | Power MOSFET ( Transistor ) | ON Semiconductor |
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