NTS4101P PDF даташит
Спецификация NTS4101P изготовлена «ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )». |
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Детали детали
Номер произв | NTS4101P |
Описание | Power MOSFET ( Transistor ) |
Производители | ON Semiconductor |
логотип |
5 Pages
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NTS4101P
Power MOSFET
−20 V, −1.37 A, Single P−Channel, SC−70
Features
• Leading −20 V Trench for Low RDS(on)
• −2.5 V Rated for Low Voltage Gate Drive
• SC−70 Surface Mount for Small Footprint (2x2 mm)
• Pb−Free Package is Available
Applications
• High Side Load Switch
• Charging Circuit
• Single Cell Battery Applications such as: Cell Phones,
Digital Cameras, PDAs
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Units
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Steady
State
Power Dissipation
(Note 1)
Steady
State
TA = 25°C
TA = 70°C
TA = 25°C
VDSS
VGS
ID
PD
−20 V
±8 V
−1.37 A
−0.62
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0.329 W
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode), Continuous
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
IDM
TJ,
TSTG
IS
TL
−4.0
−55 to
150
−0.5
260
A
°C
A
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Units
Junction−to−Ambient – Steady State (Note 1)
RqJA
380 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
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V(BR)DSS
−20 V
RDS(on) Typ
83 mW @ −4.5 V
88 mW @ −3.6 V
104 mW @ −2.5 V
ID Max
−1.37 A
P−Channel MOSFET
S
G
D
3
1
2
SC−70/SOT−323
CASE 419
STYLE 8
MARKING DIAGRAM &
PIN ASSIGNMENT
D
3
TT M G
G
1
G
2
S
TT = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
NTS4101PT1 SOT−323 3000/Tape & Reel
NTS4101PT1G
SOT−323
(Pb−Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 206
March, 2006 − Rev. 2
1
Publication Order Number:
NTS4101P/D
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NTS4101P
ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise stated)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = −250 mA
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 2)
IDSS
IGSS
VGS = 0 V,
VDS = −16 V
TJ = 25°C
TJ = 70°C
VDS = 0 V, VGS = ±8 V
Gate Threshold Voltage
Negative Threshold
Temperature Coefficient
VGS(TH)
VGS(TH)/TJ
VGS = VDS, ID = −250 mA
Drain−to−Source On Resistance
CHARGES AND CAPACITANCES
RDS(on)
VGS = −4.5 V, ID = −1.0 A
VGS = −3.6 V, ID = −0.7 A
VGS = −2.5 V, ID = −0.3 A
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
SWITCHING CHARACTERISTICS (Note 3)
VGS = 0 V, f = 1.0 MHz,
VDS = −20 V
VGS = −4.5 V, VDS = −4.5 V,
ID = −1.0 A
Turn−On Delay Time
td(ON)
Rise Time
tr
Turn−Off Delay Time
td(OFF)
Fall Time
tf
DRAIN−SOURCE DIODE CHARACTERISTICS
VGS = −4.5 V, VDD = −4.0 V,
ID = −1.0 A, RG = 6.2 W
Forward Diode Voltage
VSD
VGS = 0 V,
TJ = 25°C
IS = −0.3 A
TJ = 125°C
Reverse Recovery Time
Charge Time
tRR VGS = 0 V, dISD/dt = 100 A/ms,
Ta IS = −1.0 A
Discharge Time
Tb
Reverse Recovery Charge
QRR
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
Min
−20
−0.45
Typ
−24.5
−13.7
−0.64
2.7
83
88
104
603
90
62
6.4
0.7
1.0
1.5
6.2
14.9
26
18
−0.61
−0.5
10.9
7.1
3.8
4.25
Max Unit
−1.0
−5.0
±100
V
mV/°C
mA
nA
−1.5 V
mV/°C
120 mW
130
160
840 pF
125
85
9.0 nC
12 ns
25
40
30
−1.2 V
20 ns
nC
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NTS4101P
TYPICAL CHARACTERISTICS
6
5
VGS = −4.5 V
−3.5 V
−3.0 V
−2.0 V
TJ = 25°C
−1.8 V
4 −2.5 V
3 −2.2 V
−1.6 V
6
VDS w −10 V
5
4
3
2 −1.4 V
1 −1.2 V
−1.0 V
0
02468
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
2
1
TJ = 125°C
TJ = 25°C
0 TJ = −55°C
0 0.4 0.8 1.2 1.6 2.0 2.4
−VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
0.16
VGS = −4.5 V
0.12
0.08
0.04
TJ = 125°C
TJ = 25°C
TJ = −55°C
0.16
VGS = −3.6 V
0.12
0.08
0.04
TJ = 125°C
TJ = 25°C
TJ = −55°C
0
0123456
−ID, DRAIN CURRENT (A)
Figure 3. On−Resistance versus Drain Current
and Temperature
0
0123456
−ID, DRAIN CURRENT (A)
Figure 4. On−Resistance versus Drain Current
and Temperature
1.5
ID = −1.0 A
VGS = −4.5 V
1.3
1000
800 CISS
TJ = 25°C
VGS = 0 V
600
1.1
400
0.9
0.7
−50
−25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
150
200 COSS
CRSS
00
4
8 12 16
−DRAIN−TO−SOURCE VOLTAGE (V)
Figure 6. Capacitance Variation
20
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NTS4101P | Power MOSFET ( Transistor ) | ON Semiconductor |
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