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PDF NTGS3441P Data sheet ( Hoja de datos )
| Número de pieza | NTGS3441P | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTGS3441P
Power MOSFET
−20 V, −3.16 A, Single P−Channel TSOP−6
Features
• Ultra Low RDS(on) to Improve Conduction Loss
• Low Gate Charge to Improve Switching Losses
• TSOP−6 Surface Mount Package
• This is a Pb−Free Device
Applications
• High Side Switch in DC−DC Converters
• Battery Management
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady
State
t = 10 s
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
t = 10 s
VDSS
VGS
ID
PD
−20
±12
−2.5
−1.8
−3.16
0.98
V
V
A
W
www.DataSheet4U.com
1.60
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
ID
PD
−1.8 A
−1.3
0.51 W
Pulsed Drain Current tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
IDM
TJ,
TSTG
IS
TL
−13
−55 to
150
−1.5
260
A
°C
A
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in
sq [1 oz] including traces)
2. Surface−mounted on FR4 board using the minimum recommended pad size
(Cu area = 0.0751 in sq)
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 0
1
http://onsemi.com
V(BR)DSS
−20 V
RDS(ON) TYP
91 mW @ 4.5 V
144 mW @ 2.7 V
188 mW @ 2.5 V
ID MAX
−3.16 A
P−Channel
1256
3
4
MARKING
DIAGRAM
TSOP−6
CASE 318G
1 STYLE 1
S3 MG
G
1
PT = Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
Drain Drain Source
6 54
1 23
Drain Drain Gate
ORDERING INFORMATION
Device
Package
Shipping†
NTGS3441PT1G TSOP−6 3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NTGS3441P/D
1 page  
NTGS3441P
PACKAGE DIMENSIONS
A
L
65 4
S
12 3
B
D
G
0.05 (0.002)
H
C
TSOP−6
CASE 318G−02
ISSUE N
M
J
K
SOLDERING FOOTPRINT*
2.4
0.094
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS
OF BASE MATERIAL.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
MILLIMETERS INCHES
DIM MIN MAX MIN MAX
A 2.90 3.10 0.1142 0.1220
B 1.30 1.70 0.0512 0.0669
C 0.90 1.10 0.0354 0.0433
D 0.25 0.50 0.0098 0.0197
G 0.85 1.05 0.0335 0.0413
H 0.013 0.100 0.0005 0.0040
J 0.10 0.26 0.0040 0.0102
K 0.20 0.60 0.0079 0.0236
L 1.25 1.55 0.0493 0.0610
M 0 _ 10 _ 0 _ 10 _
S 2.50 3.00 0.0985 0.1181
STYLE 1:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. SOURCE
5. DRAIN
6. DRAIN
1.9
0.075
0.95
0.037
0.95
0.037
0.7
0.028
1.0
0.039
ǒ ǓSCALE 10:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
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| PDF Descargar | [ Datasheet NTGS3441P.PDF ] | |
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