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NE678M04 PDF даташит

Спецификация NE678M04 изготовлена ​​​​«CEL» и имеет функцию, называемую «NPN SILICON RF TRANSISTOR».

Детали детали

Номер произв NE678M04
Описание NPN SILICON RF TRANSISTOR
Производители CEL
логотип CEL логотип 

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NE678M04 Даташит, Описание, Даташиты
NPN SILICON RF TRANSISTOR
NE678M04
/
2SC5753
JEITA
Part No.
NPN SILICON RF TRANSISTOR FOR
MEDIUM OUTPUT POWER AMPLIFICATION (60 mW)
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD
FEATURES
Ideal for medium output power amplification
PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm
HFT3 technology (fT = 12 GHz) adopted
High reliability through use of gold electrodes
Flat-lead 4-pin thin-type super minimold package
ORDERING INFORMATION
Part Number
NE678M04-A
2SC5753-A
NE678M04-T2-A
2SC5753-T2-A
Quantity
50 pcs (Non reel)
3 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape
Remark To order evaluation samples, please contact your nearby sales office.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Ptot Note
Tj
Tstg
Ratings
9.0
6.0
2.0
100
205
150
65 to +150
Note Mounted on 1.08 cm2 1.0 mm (t) glass epoxy PCB
Unit
V
V
V
mA
mW
C
C
Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
Document No. P15659EJ1V0DS00 (1st edition)
Date Published August 2001 NS CP(K)









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NE678M04 Даташит, Описание, Даташиты
NE678M04 / 2SC5753
THERMAL RESISTANCE
Parameter
Junction to Ambient Resistance
Symbol
Rth j-a
Note
Value
600
Unit
C/W
Note Mounted on 1.08 cm2 1.0 mm (t) glass epoxy PCB
ELECTRICAL CHARACTERISTICS (TA = +25C)
Parameter
Symbol
Test Conditions
DC Characteristics
Collector Cut-off Current
ICBO VCB = 5 V, IE = 0 mA
Emitter Cut-off Current
DC Current Gain
IEBO VBE = 1 V, IC = 0 mA
hFE Note 1 VCE = 3 V, IC = 30 mA
RF Characteristics
Gain Bandwidth Product
fT VCE = 3 V, IC = 30 mA, f = 2 GHz
Insertion Power Gain
S21e2 VCE = 3 V, IC = 30 mA, f = 2 GHz
Noise Figure
NF VCE = 3 V, IC = 7 mA, f = 2 GHz,
ZS = Zopt
Reverse Transfer Capacitance
Cre Note 2 VCB = 3 V, IE = 0 mA, f = 1 MHz
Maximum Available Power Gain
MAG Note 3 VCE = 3 V, IC = 30 mA, f = 2 GHz
Linear Gain
GL VCE = 2.8 V, ICq = 10 mA, f = 1.8 GHz,
Pin = 5 dBm
Gain 1 dB Compression Output Power PO (1 dB) VCE = 2.8 V, ICq = 10 mA, f = 1.8 GHz,
Pin = 7 dBm
Collector Efficiency
C VCE = 2.8 V, ICq = 10 mA, f = 1.8 GHz,
Pin = 7 dBm
MIN.
75
8.0
TYP.
120
12.0
10.5
1.7
0.42
13.5
13.0
18.0
55
MAX.
100
100
150
2.5
0.7
Unit
nA
nA
GHz
dB
dB
pF
dB
dB
dBm
%
Notes 1. Pulse measurement: PW 350 s, Duty Cycle 2%
2. Collector to base capacitance when the emitter grounded
3. MAG = S21 (K (K2 1) )
S12
hFE CLASSIFICATION
Rank
Marking
hFE Value
FB
R55
75 to 150
2 Data Sheet P15659EJ1V0DS









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NE678M04 Даташит, Описание, Даташиты
NE678M04 / 2SC5753
TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
300
Mounted on Glass Epoxy PCB
(1.08 cm2 × 1.0 mm (t) )
250
205
200
150
100
50
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
1.0
f = 1 MHz
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0 25 50 75 100 125 150
Ambient Temperature TA (˚C)
0 123 45 6
Collector to Base Voltage VCB (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
VCE = 3 V
10
1
0.1
0.01
0.001
0.0001
0.5
0.6 0.7 0.8 0.9
Base to Emitter Voltage VBE (V)
1.0
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
100
90 700 µA
80 600 µA
70
500 µA
60
400 µA
50
300 µA
40
30 200 µA
20
10 IB = 100 µA
0 2468
Collector to Emitter Voltage VCE (V)
1 000
DC CURRENT GAIN vs.
COLLECTOR CURRENT
VCE = 3 V
100
10
0.1
1 10
Collector Current IC (mA)
100
Data Sheet P15659EJ1V0DS
3










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