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PDF NE592 Data sheet ( Hoja de datos )
| Número de pieza | NE592 | |
| Descripción | Video Amplifier | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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NE592
Video Amplifier
The NE592 is a monolithic, two-stage, differential output,
wideband video amplifier. It offers fixed gains of 100 and 400
without external components and adjustable gains from 400 to 0 with
one external resistor. The input stage has been designed so that with
the addition of a few external reactive elements between the gain
select terminals, the circuit can function as a high-pass, low-pass, or
band-pass filter. This feature makes the circuit ideal for use as a
video or pulse amplifier in communications, magnetic memories,
display, video recorder systems, and floppy disk head amplifiers.
Now available in an 8-pin version with fixed gain of 400 without
external components and adjustable gain from 400 to 0 with one
external resistor.
Features
• 120 MHz Unity Gain Bandwidth
• Adjustable Gains from 0 to 400
• Adjustable Pass Band
• No Frequency Compensation Required
• Wave Shaping with Minimal External Components
• MIL-STD Processing Available
• Pb−Free Packages are Available
Applications
• Floppy Disk Head Amplifier
• Video Amplifier
• Pulse Amplifier in Communications
• Magnetic Memory
• Video Recorder Systems
www.DataSheet4U.com
http://onsemi.com
MARKING
DIAGRAMS
1 SOIC−8
D SUFFIX
CASE 751
8
NE592
ALYW
G
1
8
1 PDIP−8
N SUFFIX
CASE 626
NE592N8
AWL
YYWWG
1
14
1 SOIC−14
D SUFFIX
CASE 751A
NE592D14G
AWLYWW
1
R1 R2
R8
INPUT 1
G1A
G2A
INPUT 2
Q1 Q2
G1B
R3 R5
G2B
R10 R9
Q4 Q3
Q5
R11
+V
Q6
OUTPUT 1
R12
OUTPUT 2
Q7B Q8
Q7A
R7A R7B
R15
Q9
R16
Figure 1. Block Diagram
Q10
Q11
R13 R14
-V
14
1
PDIP−14
N SUFFIX
CASE 646
NE592N14
AWLYYWWG
1
A = Assembly Location
L, WL = Wafer Lot
Y, YY = Year
W, WW = Work Week
G or G = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
© Semiconductor Components Industries, LLC, 2006
October, 2006 − Rev. 4
1
Publication Order Number:
NE592/D
1 page  
NE592
TYPICAL PERFORMANCE CHARACTERISTICS
60
GAIN 2
50 TA = 25oC
RL = 1kW
40
30
20 VS = +8V
10 VS = +6V
0
-10
1
VS = +3V
5 10
50 100
FREQUENCY − MHz
500 1000
Figure 11. Gain vs. Frequency
as a Function of Supply Voltage
14
12
11
8
1
592
347
0.2mF
0.2mF
51W 51W RADJ
1kW 1kW
VS = +6V TA = 25oC
Figure 12. Voltage Gain Adjust
Circuit
1000
100
10
VS = +6V
f = 100kHz
TA = 25oC
FIGURE 2
1
.1
.01
1
10 100 1K 10K 100K 1M
RADJ − W
Figure 13. Voltage Gain as a
Function of RADJ (Figure 2)
21
20 VS = +6V
19
18
17
16
15
14
-60
-20 20
60 100
TEMPERATURE − oC
140
Figure 14. Supply Current as a
Function of Temperature
7.0
6.0
VS = +6V
TA = 25oC
5.0
4.0
3.0
2.0
1.0
0
10
50 100
500 1K
5K 10K
LOAD RESISTANCE − W
Figure 17. Output Voltage
Swing as a Function of Load
Resistance
70
60
VS = +6V
TA = 25oC
GAIN 2
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160 180 200
DIFFERENTIAL INPUT VOLTAGE − mV
Figure 15. Differential Overdrive
Recovery Time
7.0
6.0 TA = 25oC
5.0
VOLTAGE
4.0
3.0 CURRENT
2.0
1.0
0
3.0
4.0 5.0 6.0 7.0
SUPPLY VOLTAGE − +V
8.0
Figure 16. Output Voltage and
Current Swing as a Function of
Supply Voltage
70
GAIN 2
60 VS = +6V
50
40
30
20
10
0
-60
-20 0 20
60 100
TEMPERATURE − oC
140
Figure 18. Input Resistance as a
Function of Temperature
100
90
80
70
60
50
40
30
20
10
0
1
GAIN 2
VS = +6V
TA = 25oC
BW = 10MHz
10 100 1K
SOURCE RESISTANCE − W
10K
Figure 19. Input Noise Voltage
as a Function of Source
Resistance
http://onsemi.com
5
5 Page 
NE592
PACKAGE DIMENSIONS
SOIC−14
CASE 751A−03
ISSUE H
14
1
−T−
SEATING
PLANE
−A−
G
8
−B− P 7 PL
0.25 (0.010) M B M
7
C R X 45_
F
D 14 PL
K
0.25 (0.010) M T B S A S
M
J
SOLDERING FOOTPRINT*
14X
0.58
7X
7.04
1
14X
1.52
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE
DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE 0.127
(0.005) TOTAL IN EXCESS OF THE D
DIMENSION AT MAXIMUM MATERIAL
CONDITION.
MILLIMETERS INCHES
DIM MIN MAX MIN MAX
A 8.55 8.75 0.337 0.344
B 3.80 4.00 0.150 0.157
C 1.35 1.75 0.054 0.068
D 0.35 0.49 0.014 0.019
F 0.40 1.25 0.016 0.049
G 1.27 BSC
0.050 BSC
J 0.19 0.25 0.008 0.009
K 0.10 0.25 0.004 0.009
M 0_ 7_ 0_ 7_
P 5.80 6.20 0.228 0.244
R 0.25 0.50 0.010 0.019
1.27
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet NE592.PDF ] | |
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