DataSheet26.com

NIF9N05CL PDF даташит

Спецификация NIF9N05CL изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Protected Power MOSFET».

Детали детали

Номер произв NIF9N05CL
Описание Protected Power MOSFET
Производители ON Semiconductor
логотип ON Semiconductor логотип 

6 Pages
scroll

No Preview Available !

NIF9N05CL Даташит, Описание, Даташиты
NIF9N05CL
Protected Power MOSFET
2.6 A, 52 V, N−Channel, Logic Level,
Clamped MOSFET w/ ESD Protection
in a SOT−223 Package
Benefits
High Energy Capability for Inductive Loads
Low Switching Noise Generation
Features
Diode Clamp Between Gate and Source
ESD Protection − HBM 5000 V
Active Over−Voltage Gate to Drain Clamp
Scalable to Lower or Higher RDS(on)
Internal Series Gate Resistance
Pb−Free Packages are Available
Applications
Automotive and Industrial Markets:
Solenoid Drivers, Lamp Drivers, Small Motor Drivers
www.DataSheet4U.com
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage Internally Clamped VDSS
52−59
V
Gate−to−Source Voltage − Continuous
VGS ±15 V
Drain Current
− Continuous @ TA = 25°C
− Single Pulse (tp = 10 ms) (Note 1)
ID
2.6 A
IDM 10
Total Power Dissipation @ TA = 25°C (Note 1) PD
1.69 W
Operating and Storage Temperature Range TJ, Tstg −55 to 150 °C
Single Pulse Drain−to−Source
Avalanche Energy (VDD = 50 V, ID(pk) = 1.17
A, VGS = 10 V, L = 160 mH, RG = 25 W)
EAS
110 mJ
Thermal Resistance,
Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)
RqJA
RqJA
°C/W
74
169
Maximum Lead Temperature for Soldering TL 260 °C
Purposes, 1/8from Case for 10 Seconds
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to a FR4 board using 1pad size, (Cu area 1.127 in2).
2. When surface mounted to a FR4 board using minimum recommended pad
size, (Cu area 0.412 in2).
© Semiconductor Components Industries, LLC, 2006
May, 2006 − Rev. 5
1
http://onsemi.com
VDSS
(Clamped)
52 V
RDS(ON) TYP
107 mW
ID MAX
2.6 A
Gate
(Pin 1)
Overvoltage
Protection
RG
ESD Protection
Drain
(Pins 2, 4)
MPWR
Source
(Pin 3)
SOT−223
CASE 318E
STYLE 3
MARKING DIAGRAM
GATE
DRAIN
SOURCE
1
2
3
4
DRAIN
(Top View)
A = Assembly Location
Y = Year
W = Work Week
F9N05 = Specific Device Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Publication Order Number:
NIF9N05CL/D









No Preview Available !

NIF9N05CL Даташит, Описание, Даташиты
NIF9N05CL
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
(VGS = 0 V, ID = 1.0 mA, TJ = 25°C)
(VGS = 0 V, ID = 1.0 mA, TJ = −40°C to 125°C)
Temperature Coefficient (Negative)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = 40 V, VGS = 0 V)
(VDS = 40 V, VGS = 0 V, TJ = 125°C)
IDSS
Gate−Body Leakage Current
(VGS = ±8 V, VDS = 0 V)
(VGS = ±14 V, VDS = 0 V)
ON CHARACTERISTICS (Note 3)
IGSS
Gate Threshold Voltage (Note 3)
(VDS = VGS, ID = 100 mA)
Threshold Temperature Coefficient (Negative)
VGS(th)
Static Drain−to−Source On−Resistance (Note 3)
(VGS = 3.5 V, ID = 0.6 A)
(VGS = 4.0 V, ID = 1.5 A)
(VGS = 10 V, ID = 2.6 A)
Forward Transconductance (Note 3) (VDS = 15 V, ID = 2.6 A)
DYNAMIC CHARACTERISTICS
RDS(on)
gFS
Input Capacitance
Output Capacitance
Transfer Capacitance
VDS = 35 V, VGS = 0 V,
f = 10 kHz
Input Capacitance
Output Capacitance
Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 10 kHz
3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
4. Switching characteristics are independent of operating junction temperatures.
Ciss
Coss
Crss
Ciss
Coss
Crss
Min
52
50.8
1.3
Typ
55
54
−9.3
±22
1.75
−4.1
190
165
107
3.8
155
60
25
170
70
30
Max
59
59.5
10
25
±10
2.5
380
200
125
250
100
40
Unit
V
V
mV/°C
mA
mA
V
mV/°C
mW
Mhos
pF
pF
http://onsemi.com
2









No Preview Available !

NIF9N05CL Даташит, Описание, Даташиты
NIF9N05CL
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
VGS = 4.5 V, VDD = 40 V,
ID = 2.6 A, RD = 15.4 W
VGS = 4.5 V, VDD = 40 V,
ID = 1.0 A, RD = 40 W
VGS = 10 V, VDD = 15 V,
ID = 2.6 A, RD = 5.8 W
VGS = 4.5 V, VDS = 40 V,
ID = 2.6 A (Note 3)
Gate Charge
VGS = 4.5 V, VDS = 15 V,
ID = 1.5 A (Note 3)
SOURCE−DRAIN DIODE CHARACTERISTICS
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
QT
Q1
Q2
QT
Q1
Q2
Forward On−Voltage
IS = 2.6 A, VGS = 0 V (Note 3)
IS = 2.6 A, VGS = 0 V, TJ = 125°C
VSD
Reverse Recovery Time
Reverse Recovery Stored Charge
ESD CHARACTERISTICS
IS = 1.5 A, VGS = 0 V,
dIs/dt = 100 A/ms (Note 3)
trr
ta
tb
QRR
Electro−Static Discharge Capability
Human Body Model (HBM)
ESD
Machine Model (MM)
3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
4. Switching characteristics are independent of operating junction temperatures.
Min Typ Max
275
1418
780
1120
242
1165
906
1273
107
290
1540
1000
4.5
0.9
2.6
3.9
1.0
1.7
465
2400
1320
1900
7.0
0.81 1.5
0.66
730
200
530
6.3
5000
500
Unit
ns
ns
ns
nC
nC
V
ns
mC
V
http://onsemi.com
3










Скачать PDF:

[ NIF9N05CL.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
NIF9N05CLProtected Power MOSFETON Semiconductor
ON Semiconductor

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск