NJL21193DG PDF даташит
Спецификация NJL21193DG изготовлена «ON Semiconductor» и имеет функцию, называемую «(NJL21193DG / NJL21194DG) Complementary ThermalTrak Transistors». |
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Детали детали
Номер произв | NJL21193DG |
Описание | (NJL21193DG / NJL21194DG) Complementary ThermalTrak Transistors |
Производители | ON Semiconductor |
логотип |
8 Pages
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NJL21193DG (PNP),
NJL21194DG (NPN)
Complementary
ThermalTrak™ Transistors
The ThermalTrak family of devices has been designed to eliminate
thermal equilibrium lag time and bias trimming in audio amplifier
applications. They can also be used in other applications as transistor
die protection devices.
Features
• Thermally Matched Bias Diode
• Instant Thermal Bias Tracking
• Absolute Thermal Integrity
• Medium Frequency Device with Extended Safe Operating Area
• These are Pb−Free Devices
Benefits
• Eliminates Thermal Equilibrium Lag Time and Bias Trimming
• Superior Sound Quality Through Improved Dynamic Temperature
Response
• Significantly Improved Bias Stability
• Simplified Assembly
♦ Reduced Labor Costs
♦ Reduced Component Count
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• High Reliability
Applications
• High−End Consumer Audio Products
♦ Home Amplifiers
♦ Home Receivers
• Professional Audio Amplifiers
♦ Theater and Stadium Sound Systems
♦ Public Address Systems (PAs)
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BIPOLAR POWER
TRANSISTORS
16 A, 250 V, 200 W
TO−264, 5 LEAD
CASE 340AA
STYLE 1
MARKING DIAGRAM SCHEMATIC
NJLxxxxDG
AYYWW
ThermalTrak
xxxx
G
A
YY
WW
= Specific Device Code
= Pb−Free Device
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 0
1
Publication Order Number:
NJL21193/D
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NJL21193DG (PNP), NJL21194DG (NPN)
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector−Emitter Voltage − 1.5 V
Collector Current
− Continuous
− Peak (Note 1)
Base Current − Continuous
Total Power Dissipation @ TC = 25°C
Derate Above 25°C
Operating and Storage Junction Temperature Range
DC Blocking Voltage
Average Rectified Forward Current
Symbol
VCEO
VCBO
VEBO
VCEX
IC
IB
PD
TJ, Tstg
VR
IF(AV)
Value
250
400
5
400
16
30
5.0
200
1.43
− 65 to +150
200
1.0
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
W
W/°C
°C
V
A
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
0.625
°C/W
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.
ATTRIBUTES
Characteristic
ESD Protection
Human Body Model
Machine Model
Flammability Rating
Value
>8000 V
> 400 V
UL 94 V−0 @ 0.125 in
ORDERING INFORMATION
Device
NJL21193DG
NJL21194DG
Package
TO−264
(Pb−Free)
TO−264
(Pb−Free)
Shipping
25 Units / Rail
25 Units / Rail
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NJL21193DG (PNP), NJL21194DG (NPN)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0)
Collector Cutoff Current (VCE = 200 Vdc, IB = 0)
Emitter Cutoff Current (VCE = 5 Vdc, IC = 0)
Collector Cutoff Current (VCE = 250 Vdc, VBE(off) = 1.5 Vdc)
SECOND BREAKDOWN
VCEO(sus)
ICEO
IEBO
ICEX
Second Breakdown Collector Current with Base Forward Biased
(VCE = 50 Vdc, t = 1 s (non−repetitive)
(VCE = 80 Vdc, t = 1 s (non−repetitive)
ON CHARACTERISTICS
IS/b
DC Current Gain
(IC = 8 Adc, VCE = 5 Vdc)
(IC = 16 Adc, IB = 5 Adc)
Base−Emitter On Voltage (IC = 8 Adc, VCE = 5 Vdc)
Collector−Emitter Saturation Voltage
(IC = 8 Adc, IB = 0.8 Adc)
(IC = 16 Adc, IB = 3.2 Adc)
DYNAMIC CHARACTERISTICS
hFE
VBE(on)
VCE(sat)
Total Harmonic Distortion at the Output
VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS
(Matched pair hFE = 50 @ 5 A/5 V)
hFE
unmatched
hFE
matched
THD
Current Gain Bandwidth Product
(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz)
Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
Maximum Instantaneous Forward Voltage (Note 2)
(iF = 1.0 A, TJ = 25°C)
(iF = 1.0 A, TJ = 150°C)
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 150°C)
Maximum Reverse Recovery Time
(iF = 1.0 A, di/dt = 50 A/ms)
2. Diode Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%.
fT
Cob
vF
iR
trr
Min
250
−
−
−
4.0
2.25
25
8
−
−
−
Max
−
100
100
100
−
−
75
−
2.2
1.4
4
−−
−−
4−
− 500
1.1
0.93
10
100
100
Unit
Vdc
mAdc
mAdc
mAdc
Adc
Vdc
Vdc
%
MHz
pF
V
mA
ns
6.5
VCE = 10 V
6.0
PNP NJL21193
5.5
5V
5.0
4.5
4.0
3.5 TJ = 25°C
ftest = 1 MHz
3.0
0.1
1.0
IC COLLECTOR CURRENT (AMPS)
10
Figure 1. Typical Current Gain Bandwidth Product
NPN NJL21194
8.0
7.0
10 V
6.0
5.0
VCE = 5 V
4.0
3.0
2.0
1.0
0
0.1
TJ = 25°C
ftest = 1 MHz
1.0
IC COLLECTOR CURRENT (AMPS)
10
Figure 2. Typical Current Gain Bandwidth Product
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Номер в каталоге | Описание | Производители |
NJL21193DG | (NJL21193DG / NJL21194DG) Complementary ThermalTrak Transistors | ON Semiconductor |
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