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NLSF308 PDF даташит

Спецификация NLSF308 изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Quad 2-Input AND Gate».

Детали детали

Номер произв NLSF308
Описание Quad 2-Input AND Gate
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NLSF308 Даташит, Описание, Даташиты
NLSF308
Quad 2−Input AND Gate
The NLSF308 is an advanced high speed CMOS 2−input AND gate
fabricated with silicon gate CMOS technology. It achieves high speed
operation similar to equivalent Bipolar Schottky TTL while
maintaining CMOS low power dissipation.
The internal circuit is composed of three stages, including a buffer
output which provides high noise immunity and stable output. The
inputs tolerate voltages up to 7.0 V, allowing the interface of 5.0 V
systems to 3.0 V systems.
Features
High Speed: tPD = 4.3 ns (Typ) at VCC = 5.0 V
Low Power Dissipation: ICC = 2.0 mA (Max) at TA = 25°C
High Noise Immunity: VNIH = VNIL = 28% VCC
Power Down Protection Provided on Inputs
Balanced Propagation Delays
Designed for 2.0 V to 5.5 V Operating Range
Low Noise: VOLP = 0.8 V (Max)
Function Compatible with Other Standard Logic Families
QFN−16 Package
Latchup Performance Exceeds 300 mA
ESD Performance: Human Body Model; > 2000 V;
Machine Model; > 200 V
Chip Complexity: 24 FETs or 6 Equivalent Gates
Pb−Free Package is Available*
www.DataSheet4U.com
http://onsemi.com
1
QFN−16
MN SUFFIX
CASE 485G
MARKING DIAGRAM
ÇÇÇ1 ÇÇÇ16 ÇÇÇNLSF
308
ALYW G
G
FUNCTION TABLE
Inputs
Output
AB
Y
LL
LH
HL
HH
L
L
L
H
NLSF308 = Device Code
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
NLSF308MNR2 QFN−16 3000 / Tape & Reel
NLSF308MNR2G QFN−16 3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
May, 2006 − Rev. 4
1
Publication Order Number:
NLSF308/D









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NLSF308 Даташит, Описание, Даташиты
NLSF308
16 15 14 13
15
A1
16
B1
3
A2
4
B2
8
A3
9
B3
12
A4
13
B4
1
Y1
5
Y2
Y = AB
7
Y3
10
Y4
Figure 1. LOGIC DIAGRAM
Y1 1
NC 2
A2 3
B2 4
NLSF308
MN Package
(Top View)
12 A4
11 NC
10 Y4
9 B3
5678
Figure 2. PIN ASSIGNMENT (QFN−16)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎParameter
Symbol
Value
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDC Supply Voltage
VCC
–0.5 to + 7.0
V
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDC Input Voltage
Vin
–0.5 to + 7.0
V
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDC Output Voltage
Vout
–0.5 to VCC + 0.5
V
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎInput Diode Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOutput Diode Current
IIK −20 mA
IOK ±20 mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDC Output Current, per Pin
Iout ±25 mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDC Supply Current, VCC and GND Pins
ICC ±50 mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎPower Dissipation in Still Air
PD 450 mW
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎStorage Temperature
Tstg
–65 to + 150
°C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎStresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
RECOMMENDED OPERATING CONDITIONS
ÎÎÎÎÎParameter
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDC Supply Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDC Input Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDC Output Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating Temperature
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎInput Rise and Fall Time
VCC = 3.3 V ±0.3 V
VCC = 5.0 V ±0.5 V
Symbol
VCC
Vin
Vout
TA
tr, tf
Min Max Unit
2.0 5.5 V
0 5.5 V
0
VCC
V
−40 + 85 °C
0 100 ns/V
0 20
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NLSF308 Даташит, Описание, Даташиты
NLSF308
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDC ELECTRICAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎParameter
Minimum High−Level Input
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVoltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMaximum Low−Level Input
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVoltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMinimum High−Level Output
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVoltage
Test Conditions
Vin = VIH or VIL
IOH = −50 mA
Symbol
VCC
V
TA = 25°C
Min Typ Max
TA = − 40 to 85°C
Min Max
Unit
VIH 2.0 1.50
3.0 to 5.5 VCC x 0.7
1.50
VCC x 0.7
V
VIL 2.0
3.0 to 5.5
0.50
VCC x 0.3
0.50 V
VCC x 0.3
VOH
2.0
3.0
4.5
1.9 2.0
2.9 3.0
4.4 4.5
1.9
2.9
4.4
V
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMaximum Low−Level Output
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVoltage
Vin = VIH or VIL
IOH = −4 mA,
IOH = −8 mA
Vin = VIH or VIL
IOL = 50 mA
3.0
4.5
VOL 2.0
3.0
4.5
2.58
3.94
0.0
0.0
0.0
0.1
0.1
0.1
2.48
3.80
0.1 V
0.1
0.1
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMaximum Input Leakage Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMaximumQuiescent Supply
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCurrent
Vin = VIH or VIL
IOL = 4 mA
IOL = 8 mA
Vin = 5.5 V or GND
Vin = VCC or GND
3.0
4.5
0 to 5.5
5.5
0.36
0.36
± 0.1
2.0
0.44
0.44
± 1.0
20.0
mA
mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎAC ELECTRICAL CHARACTERISTICS (Inputtr = tf= 3.0 ns)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎParameter
Test Conditions
TA = 25°C
TA = − 40 to 85°C
Symbol Min Typ Max Min
Max Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMaximum Propagation Delay, A or B to Y VCC = 3.3 ± 0.3 V, CL = 15 pF,
CL = 50 pF
tPLH,
tPHL
6.2 8.8
8.7 12.3
1.0
1.0
10.5 ns
14.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVCC = 5.0 ± 0.5 V, CL= 15 pF,
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCL = 50 pF
4.3 5.9
5.8 7.9
1.0
1.0
7.0
9.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMaximum Input Capacitance
Cin 4 10
10 pF
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTypical@25°C, VCC = 5.0 V
ÎÎÎÎPower Dissipation Capacitance (Note 1)
CPD
18 pF
ÎÎÎÎ1. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: ICC(OPR) = CPD  VCC  fin + ICC / 4 (per gate). CPD is used to determine the
no−load dynamic power consumption; PD = CPD  VCC2  fin + ICC  VCC.
NOISE CHARACTERISTICS (Input tr = tf = 3.0 ns, CL = 50 pF, VCC = 5.0 V)
Characteristic
Quiet Output Maximum Dynamic VOL
Quiet Output Minimum Dynamic VOL
Minimum High Level Dynamic Input Voltage
Maximum Low Level Dynamic Input Voltage
Symbol
VOLP
VOLV
VIHD
VILD
TA = 25°C
Typ Max
0.3 0.8
−0.3
−0.8
3.5
1.5
Unit
V
V
V
V
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Номер в каталогеОписаниеПроизводители
NLSF302Quad 2-Input NOR GateON Semiconductor
ON Semiconductor
NLSF308Quad 2-Input AND GateON Semiconductor
ON Semiconductor

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