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NSF2250WT1 PDF даташит

Спецификация NSF2250WT1 изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «NPN Silicon Oscillator and Mixer Transistor».

Детали детали

Номер произв NSF2250WT1
Описание NPN Silicon Oscillator and Mixer Transistor
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NSF2250WT1 Даташит, Описание, Даташиты
NSF2250WT1
NPN Silicon Oscillator and
Mixer Transistor
The NSF2250WT1 NPN silicon epitaxial bipolar transistor is
intended for use in general purpose UHF oscillator and mixer
applications. It is suitable for automotive keyless entry and TV tuner
designs.
The device features stable oscillation and small frequency drift
during changes in the supply voltage and over the ambient temperature
range.
Features
High Gain Bandwidth Product: fT = 2000 MHz Minimum
Tightly Controlled hFE Range: hFE = 120 to 250
Low Feedback Capacitance: CRE = 0.45 pF Typical
Pb−Free Package is Available
MAXIMUM RATINGS
Rating
Symbol
Value
Units
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Electrostatic Discharge
VCBO
VCEO
VEBO
IC
ESD
30 V
15 V
3.0 V
50www.DataSheemt4UA.com
HBM − Class 1C
MM − Class A
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD 202 (Note 1) mW
310 (Note 2)
1.6 (Note 1) mW/°C
2.5 (Note 2)
Thermal Resistance, Junction-to-Ambient RqJA 618 (Note 1) °C/W
403 (Note 2)
Thermal Resistance, Junction-to-Lead
RqJL
280 (Note 1) °C/W
332 (Note 2)
Junction and Storage Temperature
Range
TJ, Tstg −55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 x 1.0 inch Pad
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
1
SOT−323/SC−70
CASE 419
STYLE 3
MARKING DIAGRAM
3M M G
G
1
3M = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending upon
manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping
NSF2250WT1
SOT−323 3000/Tape & Reel
NSF2250WT1G SOT−323 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
April, 2006 − Rev. 5
1
Publication Order Number:
NSF2250WT1/D









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NSF2250WT1 Даташит, Описание, Даташиты
NSF2250WT1
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Collector Cutoff Current
VCB = 12 V, IE = 0
DC Current Gain
VCE = 10 V, IC = 5.0 mA
Collector Saturation Voltage
IC = 10 mA, IB = 1.0 mA
Gain Bandwidth Product
VCE = 3 V, IE = −5.0 mA
Output Capacitance
VCB = 3 V, IE = 0 mA, f = 1.0 MHz
Collector to Base Time Constant
VCE = 3 V, IE = −5.0 mA, f = 31.9 MHz
Feedback Capacitance
VCB = 10 V, IE = 0 mA, f = 1.0 MHz
Symbol
ICBO
hFE
VCE(sat)
fT
COB
CCSrb’b
CRE
Min Typ Max Unit
mA
− − 0.1
120 − 250
V
− − 0.5
2.0 2.3
GHz
pF
− 0.7 1.2
ps
− 3.5 8.0
− 0.45 −
pF
350
300
250
200
150
100
50
0
− 50
RqJA = 403°C/W
0 50 100
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
150
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NSF2250WT1 Даташит, Описание, Даташиты
NSF2250WT1
250
200 VCE = 12 V
150
5V
100 3 V
50
0
0.1
1 10
hFE, DC CURRENT GAIN
100
Figure 2. DC Current Gain versus Collector
Current
350
300
TA = 125°C
250
200
25°C
150
100 −55°C
50
VCE = 5 V
0
0.1
1
10
IC, COLLECTOR CURRENT
100
Figure 3. DC Current Gain versus Collector
Current
10,000
1000
5V
VCE = 12 V
10
1
f = 1 MHz
TA = 25°C
100
0.1
1 10
IC, COLLECTOR CURRENT (mA)
100
Figure 4. Gain Bandwidth Product versus
Collector Current
0.1
1
10 100
VCB, COLLECTOR BASE VOLTAGE (VOLTS)
Figure 5. Device Capacitance versus Collector
Base Voltage
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
f = 1 MHz
TA = 25°C
5 10 15 20 25 30
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 6. Output Capacitance
35
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Номер в каталогеОписаниеПроизводители
NSF2250WT1NPN Silicon Oscillator and Mixer TransistorON Semiconductor
ON Semiconductor

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