DataSheet26.com

CEA6861 PDF даташит

Спецификация CEA6861 изготовлена ​​​​«CET» и имеет функцию, называемую «P-Channel Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв CEA6861
Описание P-Channel Enhancement Mode Field Effect Transistor
Производители CET
логотип CET логотип 

4 Pages
scroll

No Preview Available !

CEA6861 Даташит, Описание, Даташиты
CEA6861
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-60V, -2.4A, RDS(ON) = 135m@VGS = -10V.
RDS(ON) = 180m@VGS = -4.5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
SOT-89 package.
D
D
SOT-89
S
D
G
G
S
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
VDS -60
VGS ±20
ID -2.4
IDM -10
Maximum Power Dissipation
PD 1.25
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
100
Units
V
V
A
A
W
C
Units
C/W
Details are subject to change without notice .
1
Rev 1. 2006.Sep
http://www.cetsemi.com









No Preview Available !

CEA6861 Даташит, Описание, Даташиты
CEA6861
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = -250µA
VDS = -60V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics c
VGS(th)
RDS(on)
VGS = VDS, ID = -250µA
VGS = -10V, ID = -2.4A
VGS = -4.5V, ID = -1.9A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
Crss
VDS = -30V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = -30V, ID = -1A,
VGS = -10V, RGEN = 6
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = -30V, ID = -2.4A,
VGS = -10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = -1.3A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
Min
-60
-1
Typ Max Units
-1
100
-100
V
µA
nA
nA
-3 V
105 135 m
135 180 m
890 pF
90 pF
85 pF
13 26
5 10
39 78
13 26
11.2 14.8
2.6
1.8
ns
ns
ns
ns
nC
nC
nC
-2.4 A
-1.2 V
6
2









No Preview Available !

CEA6861 Даташит, Описание, Даташиты
10
8 -VGS=10,8,6,5V
6
4
2 -VGS=3.0V
0
0.0 0.5 1.0 1.5 2.0 2.5
-VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
1200
1000
Ciss
800
600
400
200 Coss
Crss
0
0 6 12 18 24 30
-VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3
VDS=VGS
1.2 ID=-250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
3
CEA6861
5
25 C
4
3
2
1
TJ=125 C
-55 C
0
0123456
-VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
2.2
ID=-2.4A
1.9 VGS=-10V
1.6
1.3
1.0
0.7
0.4
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
VGS=0V
101
100
10-1
0.4 0.6 0.8 1.0 1.2 1.4
-VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current










Скачать PDF:

[ CEA6861.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
CEA6861P-Channel Enhancement Mode Field Effect TransistorCET
CET

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск