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CEM6080 PDF даташит

Спецификация CEM6080 изготовлена ​​​​«CET» и имеет функцию, называемую «Dual Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв CEM6080
Описание Dual Enhancement Mode Field Effect Transistor
Производители CET
логотип CET логотип 

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CEM6080 Даташит, Описание, Даташиты
CEM6080
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
FEATURES
60V, 5.6A, RDS(ON) = 45m@VGS = 10V.
RDS(ON) = 75m@VGS = 4.5V.
-60V, -3.3A, RDS(ON) = 130m@VGS = -10V.
RDS(ON) = 180m@VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
SO-8
1
D1 D1 D2 D2
87 65
1234
S1 G1 S2 G2
5
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
N-Channel
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
VDS 60
VGS ±20
ID 5.6
IDM 23
P-Channel
-60
±20
-3.3
-13
Maximum Power Dissipation
PD 2.0
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Units
V
V
A
A
W
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
62.5
Units
C/W
Details are subject to change without notice .
1
Rev 1. 2006.Sep
http://www.cetsemi.com









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CEM6080 Даташит, Описание, Даташиты
CEM6080
N-Channel Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 60V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
60
1
100
-100
V
µA
nA
nA
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics c
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 5.6A
VGS = 4.5V, ID = 4.5A
1
3V
35 45 m
60 75 m
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
gFS VDS = 15V, ID = 5.6A 13 S
Ciss
Coss
VDS = 30V, VGS = 0V,
f = 1.0 MHz
655
100
pF
pF
Crss 60 pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 30V, ID = 4.4A,
VGS = 10V, RGEN = 1
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 30V, ID = 5.6A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
14 28
36
36 72
48
21.8 28.9
2.9
4.4
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = 1.3A
5.6 A
1.2 V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
6
2









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CEM6080 Даташит, Описание, Даташиты
CEM6080
P-Channel Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = -250µA
VDS = -60V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics c
VGS(th)
RDS(on)
VGS = VDS, ID = -250µA
VGS = -10V, ID = -3.3A
VGS = -4.5V, ID = -2.6A
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
gFS
Ciss
Coss
Crss
VDS = -15V, ID = -3.3A
VDS = -30V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = -30V, ID = -1A,
VGS = -10V, RGEN = 6
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = -30V, ID = -3.3A,
VGS = -10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = -1.3A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
Min
-60
-1
Typ Max Units
-1
100
-100
V
µA
nA
nA
-3 V
105 130 m
135 180 m
8S
885 pF
80 pF
80 pF
12 24
48
31 62
5 10
10.5 14
2
1
ns
ns
ns
ns
nC
nC
nC
-3.3 A
-1.2 V
6
3










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