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CEM7350 PDF даташит

Спецификация CEM7350 изготовлена ​​​​«CET» и имеет функцию, называемую «Dual Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв CEM7350
Описание Dual Enhancement Mode Field Effect Transistor
Производители CET
логотип CET логотип 

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CEM7350 Даташит, Описание, Даташиты
CEM7350
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
FEATURES
100V, 2.6A, RDS(ON) = 190m@VGS = 10V.
-100V, -2.0A, RDS(ON) = 320m@VGS = -10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
D1 D1 D2 D2
87 65
SO-8
1
1234
S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
N-Channel
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
VDS 100
VGS ±20
ID 2.6
IDM 10
P-Channel
-100
±20
-2.0
-8.0
Maximum Power Dissipation
PD 2.0
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Units
V
V
A
A
W
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
62.5
Units
C/W
2005.August
http://www.cetsemi.com
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CEM7350 Даташит, Описание, Даташиты
CEM7350
N-Channel Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 100V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics d
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 2.1A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
Ciss
Coss
Crss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
td(on)
tr
td(off)
tf
VDD = 50V, ID = 1A,
VGS = 10V, RGEN = 22
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 80V, ID = 2.1A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
VSD
VGS = 0V, IS = 1.8A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
Min
100
2
Typ
150
316
93
37
12
10
30
18
12.4
2.0
5.4
Max Units
1
100
-100
V
µA
nA
nA
4V
190 m
pF
pF
pF
25 ns
20 ns
55 ns
35 ns
16 nC
nC
nC
1.8 A
1.3 V
5
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CEM7350 Даташит, Описание, Даташиты
CEM7350
P-Channel Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = -250µA
VDS = -100V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
-100
-1
100
-100
V
µA
nA
nA
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics d
VGS(th)
RDS(on)
VGS = VDS, ID = -250µA
VGS = -10V, ID = -1.5A
-2
-4 V
250 320 m
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
Ciss
Coss
Crss
VDS = -25V, VGS = 0V,
f = 1.0 MHz
576
120
32
pF
pF
pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = -50V, ID = -1A,
VGS = -10V, RGEN = 22
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = -80V, ID = -1.5A,
VGS = -10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
14 30 ns
8 20 ns
60 120 ns
20 40 ns
16 21 nC
3.5 nC
5.0 nC
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
VSD
VGS = 0V, IS = -1.4A
-1.4 A
-1.6 V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
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