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CEP04N7 PDF даташит

Спецификация CEP04N7 изготовлена ​​​​«CET» и имеет функцию, называемую «N-Channel Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв CEP04N7
Описание N-Channel Enhancement Mode Field Effect Transistor
Производители CET
логотип CET логотип 

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CEP04N7 Даташит, Описание, Даташиты
CEP04N7/CEB04N7
CEI04N7/CEF04N7
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type
CEP04N7
CEB04N7
CEI04N7
CEF04N7
VDSS
700V
700V
700V
700V
RDS(ON)
3.5
3.5
3.5
3.5
ID @VGS
4A 10V
4A 10V
4A 10V
4A d 10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.
G
D
D
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEI SERIES
TO-262(I2-PAK)
G
D
S
CEP SERIES
TO-220
G
D
S
CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263/262 TO-220F
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
IDM e
PD
700
±30
4
12
89
0.71
4d
12 d
35
0.28
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
1.4
62.5
3.6
65
Units
V
V
A
A
W
W/ C
C
Units
C/W
C/W
2005.April
4 - 18
http://www.cetsemi.com









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CEP04N7 Даташит, Описание, Даташиты
CEP04N7/CEB04N7
CEI04N7/CEF04N7
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 600V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
700
25
100
-100
V
µA
nA
nA
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 2A
2
4
2.7 3.5
V
Forward Transconductance
Dynamic Characteristics c
gFS VDS = 40V, ID = 2A
1.3 S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
505
95
pF
pF
Crss 55 pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 300V, ID = 4A,
VGS = 10V, RGEN = 25
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 480V, ID = 4A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
21 40 ns
34 65 ns
88 160 ns
28 60 ns
37 48 nC
5.7 nC
20 nC
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS f
VSD
VGS = 0V, IS = 2.5A
2.5 A
1.6 V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature .
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .
c.Guaranteed by design, not subject to production testing.
d.Limited only by maximum temperature allowed .
e .Pulse width limited by safe operating area .
f.Full package IS(max) = 2.5A .
4
4 - 19









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CEP04N7 Даташит, Описание, Даташиты
CEP04N7/CEB04N7
CEI04N7/CEF04N7
6
VGS=10,9,8,7V
5
4
3 VGS=6V
2
1 VGS=5V
0
0 5 10 15 20 25 30
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
101
TJ=150 C
100
25 C
10-1
2
-55 C
46
1.VDS=40V
2.Pulse Test
8 10
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
900
750
Ciss
600
450
300
150
0
0
Coss
Crss
5 10 15 20 25
VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3
VDS=VGS
1.2 ID=250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
3.0
ID=2A
2.5 VGS=10V
2.0
1.5
1.0
0.5
0.0
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
101 VGS=0V
100
10-1
0.4 0.6 0.8 1.0 1.2
VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
4 - 20










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