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CEB10N4 PDF даташит

Спецификация CEB10N4 изготовлена ​​​​«CET» и имеет функцию, называемую «N-Channel Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв CEB10N4
Описание N-Channel Enhancement Mode Field Effect Transistor
Производители CET
логотип CET логотип 

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CEB10N4 Даташит, Описание, Даташиты
CEP10N4/CEB10N4
CEI10N4/CEF10N4
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type
CEP10N4
CEB10N4
CEI10N4
CEF10N4
VDSS
450V
450V
450V
450V
RDS(ON)
0.7
0.7
0.7
0.7
ID
10A
10A
10A
10A e
@VGS
10V
10V
10V
10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.
G
D
D
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEI SERIES
TO-262(I2-PAK)
G
D
S
CEP SERIES
TO-220
G
D
S
CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263/262 TO-220F
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
VDS
VGS
ID
IDM f
450
±30
10
40
10 e
40 e
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
125 45
PD 1.0 0.36
Single Pulsed Avalanche Energy d
Single Pulsed Avalanche Current d
EAS 450 450
IAS 10 10
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Units
V
V
A
A
W
W/ C
mJ
A
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
1.0
62.5
2.8
65
Units
C/W
C/W
2002.September
4 - 50
http://www.cetsemi.com









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CEB10N4 Даташит, Описание, Даташиты
CEP10N4/CEB10N4
CEI10N4/CEF10N4
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 450V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 6A
Forward Transconductance
Dynamic Characteristics c
gFS VDS = 50V, ID = 6A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
Crss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 200V, ID = 10A,
VGS = 10V, RGEN = 9.1
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 320V, ID = 10A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS g
VSD
VGS = 0V, IS = 10A
Min
450
2
3
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature .
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .
c.Guaranteed by design, not subject to production testing.
d.L =9.16mH, IAS = 10A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C .
e.Limited only by maximum temperature allowed .
f .Pulse width limited by safe operating area .
g.Full package IS(max) = 5.6A .
Typ
25
100
-100
0.6
6
1400
330
120
14
27
50
24
48
4
15
Max Units
100
500
-500
V
µA
nA
nA
4V
0.7
S
pF
pF
pF
75 ns
125 ns
100 ns
60 ns
65 nC
nC
nC
10 A
2.0 V
4
4 - 51









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CEB10N4 Даташит, Описание, Даташиты
CEP10N4/CEB10N4
CEI10N4/CEF10N4
6
VGS=10,8,7,6V
5
4
3
2
VGS=5V
1
0
0123456
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
20
25 C
16
12
-55 C
8
TJ=125 C
4
0
012345
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
1800
1500
Ciss
1200
900
600
Coss
300
Crss
0
0 5 10 15 20 25
VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3
VDS=VGS
1.2 ID=250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
2.2
ID=6A
1.9 VGS=10V
1.6
1.3
1.0
0.7
0.4
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
VGS=0V
101
100
10-1
0.4 0.6 0.8 1.0 1.2 1.4
VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
4 - 52










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Номер в каталогеОписаниеПроизводители
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