(PDF) CEP50N06 Datasheet - N-Channel Enhancement Mode Field Effect Transistor

Número de pieza	CEP50N06
Descripción	N-Channel Enhancement Mode Field Effect Transistor
Fabricantes	CET
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No Preview Available ! CEP50N06/CEB50N06 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 50A ,RDS(ON) = 17mΩ (typ) @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 60 VGS ±20 Drain Current-Continuous Drain Current-Pulsed a ID 50 IDM 150 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C PD 131 0.88 Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d Operating and Store Temperature Range EAS IAS TJ,Tstg 225 50 -55 to 175 Units V V A A W W/ C mJ A C Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 1.14 62.5 Units W/ C W/ C Specification and data are subject to change without notice . 1 Rev 2. 2007.March http://www.cetsemi.com 1 page

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PDF CEP50N06 Data sheet ( Hoja de datos )