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CEP62A2 PDF даташит

Спецификация CEP62A2 изготовлена ​​​​«CET» и имеет функцию, называемую «N-Channel Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв CEP62A2
Описание N-Channel Enhancement Mode Field Effect Transistor
Производители CET
логотип CET логотип 

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CEP62A2 Даташит, Описание, Даташиты
CEP62A2/CEB62A2
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
20V, 55A, RDS(ON) = 10m@VGS = 4.5V.
RDS(ON) = 14m@VGS = 2.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package.
D
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
D
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
IDM
PD
20
±12
55
220
54
0.36
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
2.8
62.5
Units
V
V
A
A
W
W/ C
C
Units
C/W
C/W
Specification and data are subject to change without notice .
1
Rev 1. 2006.January
http://www.cetsemi.com









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CEP62A2 Даташит, Описание, Даташиты
CEP62A2/CEB62A2
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 20V, VGS = 0V
VGS = 12V, VDS = 0V
VGS = -12V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics c
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 4.5V, ID = 25A
VGS = 2.5V, ID = 25A
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
gFS
Ciss
Coss
Crss
VDS = 10V, ID = 25A
VDS = 10V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 15V, ID = 25A,
VGS = 5V, RGEN = 5.6
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 15V, ID = 50A,
VGS = 5V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = 25A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
Min
20
0.5
Typ Max Units
1
100
-100
V
µA
nA
nA
1.2 V
7 10 m
10 14 m
35
2800
520
380
S
pF
pF
pF
17 35 ns
16 33 ns
68 140 ns
31 65 ns
31 40 nC
4.6 nC
10 nC
55
0.9 1.2
A
V
4
2









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CEP62A2 Даташит, Описание, Даташиты
CEP62A2/CEB62A2
40
VGS=4.5,4.0,3.5,3.0V
30
VGS=2.5V
20
VGS=2.0V
10
VGS=1.5V
0
01234
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
100
25 C
80
60
40
20
TJ=125 C
-55 C
0
0123
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
3600
3000
2400
Ciss
1800
1200
600 Coss
0 Crss
0 5 10 15 20 25
VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3
VDS=VGS
1.2 ID=250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
2.2
ID=25A
1.9 VGS=4.5V
1.6
1.3
1.0
0.7
0.4
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
VGS=0V
102
101
100
0.4 0.6 0.8 1.0 1.2 1.4
VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3










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