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CEB655N PDF даташит

Спецификация CEB655N изготовлена ​​​​«CET» и имеет функцию, называемую «N-Channel Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв CEB655N
Описание N-Channel Enhancement Mode Field Effect Transistor
Производители CET
логотип CET логотип 

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CEB655N Даташит, Описание, Даташиты
CEP655N/CEB655N
CEI655N/CEF655N
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
Type
CEP655N
CEB655N
CEI655N
CEF655N
VDSS
150V
150V
150V
150V
RDS(ON)
0.153
0.153
0.153
0.153
ID
15A
15A
15A
15A d
@VGS
10V
10V
10V
10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.
DG
D
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEI SERIES
TO-262(I2-PAK)
G
D
S
CEP SERIES
TO-220
G
D
S
CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263/262 TO-220F
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
IDM e
PD
150
±25
15
60
83
0.56
15 d
60 d
39
0.26
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
1.8
62.5
3.8
65
Units
V
V
A
A
W
W/ C
C
Units
C/W
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2005.June
http://www.cetsemi.com









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CEB655N Даташит, Описание, Даташиты
CEP655N/CEB655N
CEI655N/CEF655N
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 150V, VGS = 0V
VGS = 25V, VDS = 0V
VGS = -25V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 8.2A
Forward Transconductance
Dynamic Characteristics c
gFS VDS = 40V, ID = 8.2A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
Crss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 75V, ID = 15A,
VGS = 10V, RGEN = 25
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 120V, ID = 15A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS f
VSD
VGS = 0V, IS = 15A g
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature .
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .
c.Guaranteed by design, not subject to production testing.
d.Limited only by maximum temperature allowed .
e .Pulse width limited by safe operating area .
f .Full package IS(max) = 10A .
g.Full package VSD test condition IS = 10A .
Min
150
2
Typ
118
5
750
175
70
17
48
40
46
26
6
12.5
Max Units
1
100
-100
V
µA
nA
nA
4V
153 m
S
pF
pF
pF
35 ns
100 ns
80 ns
90 ns
34 nC
nC
nC
15 A
1.5 V
4
2









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CEB655N Даташит, Описание, Даташиты
CEP655N/CEB655N
CEI655N/CEF655N
30
VGS=10,8,6,4V
24
50
25 C
40
18 30
12 20
6 10 TJ=125 C -55 C
0
012345
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
0
1234567
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
1200
1000
800
Ciss
600
400
200
0
0
Coss
Crss
5 10 15 20 25
VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3
VDS=VGS
1.2 ID=250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
3.0
ID=8.2A
2.5 VGS=10V
2.0
1.5
1.0
0.5
0.0
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
VGS=0V
101
100
10-1
0.4 0.6 0.8 1.0 1.2 1.4
VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3










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CEB655NN-Channel Enhancement Mode Field Effect TransistorCET
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