CEU02N7 PDF даташит
Спецификация CEU02N7 изготовлена «CET» и имеет функцию, называемую «N-Channel Enhancement Mode Field Effect Transistor». |
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Детали детали
Номер произв | CEU02N7 |
Описание | N-Channel Enhancement Mode Field Effect Transistor |
Производители | CET |
логотип |
4 Pages
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CED02N7/CEU02N7
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
700V, 1.6A, RDS(ON) = 6.6Ω @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D
D
G
S
CEU SERIES
TO-252(D-PAK)
G
DS
CED SERIES
TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
IDM
PD
700
±30
1.6
6
43
0.34
Single Pulsed Avalanche Energy d
Repetitive Avalanche Current a
Repetitive Avalanche Energy a
Operating and Store Temperature Range
EAS
IAR
EAR
TJ,Tstg
125
2
5.4
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
2.9
50
Units
V
V
A
A
W
W/ C
mJ
A
mJ
C
Units
C/W
C/W
2004.October
6 - 10
http://www.cetsemi.com
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CED02N7/CEU02N7
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 700V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
700
25
100
-100
V
µA
nA
nA
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 1A
2
4
5.5 6.6
V
Ω
Forward Transconductance
Dynamic Characteristics c
gFS VDS = 50V, ID = 1A
0.7 S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
220
55
pF
pF
Crss 30 pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 300V, ID = 2A,
VGS = 10V, RGEN = 18Ω
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 480V, ID = 2A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
19 35 ns
26 50 ns
34 70 ns
15 40 ns
14 20 nC
2.5 nC
8.6 nC
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = 2A
1.6 A
1.5 V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.L = 60mH, IAS = 2.0A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C
6
6 - 11
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CED02N7/CEU02N7
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
5 10 15 20 25
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
TJ=150 C
100
25 C
10-1
2
4
-55 C
6
1.VDS=40V
2.Pulse Test
8 10
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
300
250 Ciss
200
150
100
50
0
0
Coss
Crss
5 10 15 20 25
VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3
VDS=VGS
1.2 ID=250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
3.0
ID=1A
2.5 VGS=10V
2.0
1.5
1.0
0.5
0.0
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
VGS=0V
100
10-1
10-2
0.4 0.6 0.8 1.0 1.2 1.4
VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
6 - 12
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