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CEU13N07 PDF даташит

Спецификация CEU13N07 изготовлена ​​​​«CET» и имеет функцию, называемую «N-Channel Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв CEU13N07
Описание N-Channel Enhancement Mode Field Effect Transistor
Производители CET
логотип CET логотип 

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CEU13N07 Даташит, Описание, Даташиты
CED13N07/CEU13N07
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
70V, 11A, RDS(ON) = 127m@VGS = 10V.
RDS(ON) = 153m@VGS = 5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D
D
G
S
CEU SERIES
TO-252(D-PAK)
G
DS
CED SERIES
TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
IDM
PD
70
±20
11
44
28
0.22
Single Pulsed Avalanche Energy d
Single Pulsed Avalanche Current d
Operating and Store Temperature Range
EAS
IAS
TJ,Tstg
70
10
-55 to 150
Units
V
V
A
A
W
W/ C
mJ
A
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
4.5
50
Units
C/W
C/W
2005.March
6 - 26
http://www.cetsemi.com









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CEU13N07 Даташит, Описание, Даташиты
CED13N07/CEU13N07
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Dynamic Characteristics c
BVDSS
IDSS
IGSSF
IGSSR
VGS(th)
RDS(on)
gFS
VGS = 0V, ID = 250µA
VDS = 60V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
70
VGS = VDS, ID = 250µA
VGS = 10V, ID = 5.5A
VGS = 5V, ID = 5.5A
VDS = 25V, ID = 5.5A
1
1
100
-100
V
µA
nA
nA
2.5 V
106 127 m
127 153 m
6S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
413
105
pF
pF
Crss 23 pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 30V, ID = 6.8A,
VGS = 5V, RGEN = 25
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 48V, ID = 13.6A,
VGS = 5V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
14 30 ns
10 25 ns
28 55 ns
9 20 ns
5.5 6.4 nC
2.1 nC
2.3 nC
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = 11A
11 A
1.5 V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.L = 870µH, IAS = 10A, VDD = 25V, RG = 25Ω, Starting TJ = 25 C
6
6 - 27









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CEU13N07 Даташит, Описание, Даташиты
CED13N07/CEU13N07
15
VGS=10,8,6,5V
12 VGS=4V
9
25
25 C
20
15
6 10
3 VGS=3V
0
012345
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
5
TJ=125 C
-55 C
0
02468
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
600
500
Ciss
400
300
200
Coss
100
Crss
0
0 5 10 15 20 25
VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3
VDS=VGS
1.2 ID=250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
2.6
ID=5.5A
2.2 VGS=10V
1.8
1.4
1.0
0.6
0.2
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
VGS=0V
101
100
10-1
0.4 0.6 0.8 1.0 1.2 1.4
VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
6 - 28










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Номер в каталогеОписаниеПроизводители
CEU13N07N-Channel Enhancement Mode Field Effect TransistorCET
CET

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