CEU20N06 PDF даташит
Спецификация CEU20N06 изготовлена «CET» и имеет функцию, называемую «N-Channel Enhancement Mode Field Effect Transistor». |
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Детали детали
Номер произв | CEU20N06 |
Описание | N-Channel Enhancement Mode Field Effect Transistor |
Производители | CET |
логотип |
4 Pages
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CED20N06/CEU20N06
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
60V, 20A, RDS(ON) = 55mΩ @VGS = 10V.
RDS(ON) = 75mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D
D
G
S
CEU SERIES
TO-252(D-PAK)
G
DS
CED SERIES
TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
IDM
PD
60
±20
20
60
60
0.4
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
2.5
50
Units
V
V
A
A
W
W/ C
C
Units
C/W
C/W
2004.June
6 - 30
http://www.cetsemi.com
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CED20N06/CEU20N06
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 55V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10 V, ID = 20A
VGS = 4.5V, ID = 15A
Forward Transconductance
Dynamic Characteristics c
gFS VDS = 10 V, ID = 20A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
Crss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 30V, ID = 1A,
VGS = 10V, RGEN =6Ω
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 30V, ID = 15A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = 15A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
Min
60
1
Typ Max Units
1
100
-100
V
µA
nA
nA
3V
42 55 mΩ
55 75 mΩ
9S
890 pF
173 pF
21 pF
12 25 ns
7 20 ns
34 65 ns
9 30 ns
19 25 nC
2.8 nC
3.6 nC
20 A
1.3 V
6
6 - 31
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CED20N06/CEU20N06
25
VGS=10,8,6,5V
VGS=4V
20
50
25 C
40
15 30
10 20
5 VGS=3V
0
012345
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
10
TJ=125 C
-55 C
0
0246
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
1200
1000
800
Ciss
600
400
200 Coss
Crss
0
0 5 10 15 20 25
VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3
VDS=VGS
1.2 ID=250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
2.6
ID=20A
2.2 VGS=10V
1.8
1.4
1.0
0.6
0.2
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
VGS=0V
101
100
10-1
0.4 0.6 0.8 1.0 1.2 1.4
VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
6 - 32
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CEU20N06 | N-Channel Enhancement Mode Field Effect Transistor | CET |
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