CEU2303 PDF даташит
Спецификация CEU2303 изготовлена «CET» и имеет функцию, называемую «P-Channel Enhancement Mode Field Effect Transistor». |
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Детали детали
Номер произв | CEU2303 |
Описание | P-Channel Enhancement Mode Field Effect Transistor |
Производители | CET |
логотип |
4 Pages
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CED2303/CEU2303
P-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
-30V, -9A, RDS(ON) = 200mΩ @VGS = -10V.
RDS(ON) = 320mΩ @VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D
G
S
CEU SERIES
TO-252(D-PAK)
G
DS
CED SERIES
TO-251(I-PAK)
G
D
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
IDM
PD
-30
±20
-9
-27
33
0.22
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Units
V
V
A
A
W
W/ C
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
4.5
50
Units
C/W
C/W
2004.November
6 - 46
http://www.cetsemi.com
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CED2303/CEU2303
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = -250µA
VDS = -24V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
-30
-1
100
-100
V
µA
nA
nA
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Dynamic Characteristics c
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = -250µA
VGS = -10V, ID = -4.5A
VGS = -4.5V, ID = -2.7A
VDS = -10V, ID = -4.5A
-1
-3 V
200 mΩ
320 mΩ
5S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
Crss
VDS = -15V, VGS = 0V,
f = 1.0 MHz
230
90
20
pF
pF
pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = -15V, ID = -1A,
VGS = -10V, RGEN = 6Ω
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = -15V, ID = -4.5A,
VGS = -10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
10 20 ns
10 20 ns
20 35 ns
6 20 ns
6 10 nC
0.8 nC
1.5 nC
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = -4.5A
-9 A
-1.5 V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
6
6 - 47
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CED2303/CEU2303
10
-VGS=10,8,6V
8
-VGS=2.0V
6
-VGS=2.5V
4
10
8
6
4
25 C
2 -VGS=1.5V
0
0 2 4 6 8 10
-VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
2
TJ=125 C
0
012
-55 C
345
6
-VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
300
250 Ciss
200
150
100 Coss
50
Crss
0
0 5 10 15 20 25
-VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3
VDS=VGS
1.2 ID=-250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
2.2
ID=-4.5A
1.9 VGS=-10V
1.6
1.3
1.0
0.7
0.4
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
VGS=0V
101
100
10-1
0.4 0.6 0.8 1.0 1.2 1.4
-VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
6 - 48
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