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CED3700 PDF даташит

Спецификация CED3700 изготовлена ​​​​«CET» и имеет функцию, называемую «N-Channel Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв CED3700
Описание N-Channel Enhancement Mode Field Effect Transistor
Производители CET
логотип CET логотип 

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CED3700 Даташит, Описание, Даташиты
CED3700/CEU3700
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
30V, 12A, RDS(ON) = 95m@VGS = 10V.
RDS(ON) = 130m@VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D
D
G
S
CEU SERIES
TO-252(D-PAK)
G
DS
CED SERIES
TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
IDM
PD
30
±20
12
48
31
0.25
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
4.0
50
Units
V
V
A
A
W
W/ C
C
Units
C/W
C/W
2005.June
http://www.cetsemi.com
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CED3700 Даташит, Описание, Даташиты
CED3700/CEU3700
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 30V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10 V, ID = 12A
VGS = 4.5V, ID = 6A
Forward Transconductance
Dynamic Characteristics c
gFS VDS = 10 V, ID = 12A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
Crss
VDS = 15V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 15V , ID = 1A,
VGS = 10V, RGEN = 6
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 15V, ID = 12A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = 6A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
Min
30
1
Typ Max Units
1
100
-100
V
µA
nA
nA
2.5 V
73 95 m
99 130 m
5S
220 pF
105 pF
37 pF
7 18 ns
3 10 ns
19 40 ns
18 35 ns
6 8 nC
1.2 nC
1.3 nC
6A
1.3 V
6
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CED3700 Даташит, Описание, Даташиты
CED3700/CEU3700
20
VGS=10 thru 6V
16
VGS=5V
12
25
25 C
20
15
8 VGS=4V
4
VGS=3V
0
012345
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
10
5
TJ=125 C
-55 C
0
02468
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
300
250
Ciss
200
150
Coss
100
50 Crss
0
0 5 10 15 20 25
VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3
VDS=VGS
1.2 ID=250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
2.2
ID=12A
1.9 VGS=10V
1.6
1.3
1.0
0.7
0.4
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
VGS=0V
101
100
10-1
0.4 0.6 0.8 1.0 1.2 1.4
VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
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Номер в каталогеОписаниеПроизводители
CED3700N-Channel Enhancement Mode Field Effect TransistorCET
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