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CED4060A PDF даташит

Спецификация CED4060A изготовлена ​​​​«CET» и имеет функцию, называемую «N-Channel Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв CED4060A
Описание N-Channel Enhancement Mode Field Effect Transistor
Производители CET
логотип CET логотип 

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CED4060A Даташит, Описание, Даташиты
CED4060A/CEU4060A
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
60V, 15A, RDS(ON) = 85m@VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D
D
G
S
CEU SERIES
TO-252(D-PAK)
G
DS
CED SERIES
TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
IDM
PD
60
±20
15
45
50
0.3
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
3
50
Units
V
V
A
A
W
W/ C
C
Units
C/W
C/W
1998.March
6 - 54
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CED4060A Даташит, Описание, Даташиты
CED4060A/CEU4060A
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 60V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
60
25
100
-100
V
µA
nA
nA
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 7.5A
2
2.7 4
V
68 85 m
Forward Transconductance
Dynamic Characteristics c
gFS VDS = 10V, ID = 7.5A 6 S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
335
150
pF
pF
Crss 40 pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 30V, ID = 15A,
VGS = 10V, RGEN = 25
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 48V, ID = 15A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
10 20 ns
65 100 ns
15 30 ns
30 50 ns
10 13 nC
2.4 nC
4 nC
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = 7.5A
15
0.8 1.2
A
V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
6
6 - 55









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CED4060A Даташит, Описание, Даташиты
CED4060A/CEU4060A
30
VGS=10,9,8,7V
25
20
15
VGS=6V
10
VGS=5V
5
VGS=4V
0
0246
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
20
25 C
16
12
5
4
TJ=125 C
0
01
2
-55 C
3
4
5
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
600
500
400
Ciss
300
200
Coss
100
Crss
0
0 5 10 15 20 25
VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3
VDS=VGS
1.2 ID=250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
2.6
ID=7.5A
2.2 VGS=10V
1.8
1.4
1.0
0.6
0.2
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
VGS=0V
101
100
10-1
0.4 0.6 0.8 1.0 1.2 1.4
VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
6 - 56










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