DataSheet26.com

CED71A3 PDF даташит

Спецификация CED71A3 изготовлена ​​​​«CET» и имеет функцию, называемую «N-Channel Logic Level Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв CED71A3
Описание N-Channel Logic Level Enhancement Mode Field Effect Transistor
Производители CET
логотип CET логотип 

5 Pages
scroll

No Preview Available !

CED71A3 Даташит, Описание, Даташиты
CED71A3/CEU71A3
Dec. 2002
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
30V , 65A , RDS(ON)=10m@VGS=10V.
RDS(ON)=14m@VGS=5.0V.
Super high dense cell design for extremely low RDS(ON).
D
High power and current handling capability.
TO-252 & TO-251 package.
G
D
G
S
CEU SERIES
TO-252AA(D-PAK)
G
DS
CED SERIES
TO-251(l-PAK)
S
ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
-Pulsed
Drain-Source Diode Forward Current
Maximum Power Dissipation @Tc=25 C
Derate above 25 C
Operating and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ, TSTG
Limit
30
Ć20
65
100
65
69
0.56
-55 to 150
Unit
V
V
A
A
A
W
W/ C
C
6
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
RįJC
RįJA
6-67
1.8
40
C/W
C/W









No Preview Available !

CED71A3 Даташит, Описание, Даташиты
CED71A3/CEU71A3
ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted)
Parameter
Symbol Condition
Min Typ Max Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
6 Zero Gate Voltage Drain Current
BVDSS VGS = 0V, ID = 250µA
IDSS VDS = 30V, VGS = 0V
30
V
1 µA
Gate-Body Leakage
ON CHARACTERISTICSa
IGSS VGS =Ć20V, VDS = 0V
Ć100 nA
Gate Threshold Voltage
VGS(th) VDS = VGS, ID = 250µA 1
3V
Drain-Source On-State Resistance
RDS(ON)
VGS = 10V, ID = 15A
VGS = 5.0V, ID = 13A
8.5 10 m
11.5 14 m
On-State Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICSb
ID(ON)
gFS
VGS = 10V, VDS = 5V
VDS = 5V, ID = 12A
65
26
A
S
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICSb
VDS =15V, VGS = 0V
f =1.0MHZ
2152 PF
965 PF
234 PF
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
tD(ON) VDD = 15V,
tr
ID =1A,
VGS = 10V,
tD(OFF) RGEN =6
tf
30 60 ns
63 110 ns
73 130 ns
59 100 ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS =10V, ID = 15A,
VGS =10V
Qgd
55 67 nC
9 nC
18 nC
6-68









No Preview Available !

CED71A3 Даташит, Описание, Даташиты
CED71A3/CEU71A3
ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted)
Parameter
Symbol Condition
DRAIN-SOURCE DIODE CHARACTERISTICS a
Diode Forward Voltage
VSD VGS = 0V, Is = 2.3A
Notes
a.Pulse Test:Pulse Widthś300ijs, Duty Cycleś 2%.
b.Guaranteed by design, not subject to production testing.
Min Typ Max Unit
0.9 1.3 V
6
60
VGS=10,8,6,4V
50
40
30
20 VGS=3V
10
0
0 123 45
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
3000
2500
2000
Ciss
1500
1000
Coss
500
0
0
5 10 15
Crss
20 25
30
VDS, Drain-to Source Voltage (V)
Figure 3. Capacitance
60
50
40
30
20
10
0
1
-55 C
25 C
Tj=125 C
2
3
4
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
1.80
1.60
ID=15A
VGS=10V
1.40
1.20
1.00
0.80
0.60
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation with
Temperature
6-69










Скачать PDF:

[ CED71A3.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
CED71A3N-Channel Logic Level Enhancement Mode Field Effect TransistorCET
CET

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск