NGA-486 PDF даташит
Спецификация NGA-486 изготовлена «Sirenza Microdevices» и имеет функцию, называемую «Cascadable InGap/GaAS HBT MMIC Amplifier». |
|
Детали детали
Номер произв | NGA-486 |
Описание | Cascadable InGap/GaAS HBT MMIC Amplifier |
Производители | Sirenza Microdevices |
логотип |
5 Pages
No Preview Available ! |
Product Description
Sirenza Microdevices NGA-486 is a high performance InGaP/
GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A
Darlington configuration designed with InGaP process
technology provides broadband performance up to 5 GHz with
excellent thermal perfomance. The heterojunction increases
breakdown voltage and minimizes leakage current between
junctions. Cancellation of emitter junction non-linearities results
in higher suppression of intermodulation products. At 850 Mhz
and 80mA , the NGA-486 typically provides +39.5 dBm output
IP3, 14.8 dB of gain, and +19 dBm of 1dB compressed power
using a single positive voltage supply. Only 2 DC-blocking
capacitors, a bias resistor and an optional RF choke are required
for operation.
Gain & Return Loss vs. Freq. @TL=+25°C
16 0
12 GAIN
IRL
8
ORL
4
-10
-20
-30
0 -40
0123456
Frequency (GHz)
NGA-486
DC-5 GHz, Cascadable
InGaP/GaAs HBT MMIC Amplifier
OBSOLETE
See Application Note AN-059 for Alternates
Product Features
High Gain : 14.1 dB at 1950 MHz
Cascadable 50 Ohm
Patented InGaP Technology
Operates From Single Supply
Low Thermal Resistance Package
Applications
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
IF Amplifier
Wireless Data, Satellite
Symbol
Parameter
G Small Signal Gain
P1dB
Output Power at 1dB Compression
OIP3 Output Third Order Intercept Point
Bandwidth Determined by Return Loss (>10dB)
IRL Input Return Loss
Units
dB
dBm
dBm
MHz
dB
Frequency
850 MHz
1950 MHz
2400 MHz
850 MHz
1950 MHz
850 MHz
1950 MHz
1950 MHz
Min.
13.3
Typ.
14.8
14.1
13.5
19.0
18.2
39.5
34.0
5000
14.5
Max.
16.3
ORL
NF
Output Return Loss
Noise Figure
dB 1950 MHz
dB 1950 MHz
15.5
4.0
VD Device Operating Voltage
V
4.5 4.8
5.2
ID Device Operating Current
mA
75 80 88
RTH, j-l Thermal Resistance (junction to lead)
Test Conditions:
VS = 8 V
RBIAS = 39 Ohms
ID = 80 mA Typ.
TL = 25ºC
°C/W
145
OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm
ZS = ZL = 50 Ohms
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of
this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are
implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc..
All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.sirenza.com
1 EDS-101104 Rev. OBS
No Preview Available ! |
OBSOLETE Preliminary
NGA-486 DC-5 GHz Cascadable MMIC Amplifier
Typical RF Performance at Key Operating Frequencies
Symbol
Parameter
Unit 100
G Small Signal Gain
dB 15.1
OIP3 Output Third Order Intercept Point dBm
P1dB Output Power at 1dB Compression dBm
IRL Input Return Loss
dB
39.9
19.3
21.7
ORL Output Return Loss
dB 35.8
S21 Reverse Isolation
NF Noise Figure
TeTsetsCt Coonndditiitoionnss::
VVSS==88VV
RRBIBAISAS==3399OOhhmmss
dB 18.5
dB 3.9
IDID==8800mmAATTyypp..
TTL L==2255ºCºC
FreFqrueqenuceync(My H(MzH) z)
500
850
1950
2400
3500
14.9 14.8 14.1 13.5 12.0
40.2 39.5 34.0 32.5 28.4
19.2 19.0 18.2 17.6 14.6
20.1 18.0 14.5 14.8 17.4
29.5 24.3 15.5 15.0 16.6
18.5 18.5 18.4 18.3 17.9
3.7 3.8 4.0 4.0 4.0
OOIPIP33TToonneeSSppaacciningg==11MMHHzz, ,PPoouut tppeerrtotonnee==00ddBBmm
ZZSS==ZZL L==5500OOhhmmss
5.0
4.5
4.0
3.5
3.0
2.5
2.0
0.0
Noise Figure vs. Frequency
VD= 4.8 V, ID= 80 mA
TL=+25ºC
0.5 1.0 1.5 2.0 2.5 3.0 3.5
Frequency (GHz)
Absolute Maximum Ratings
Parameter
Absolute Limit
Max. Device Current (ID)
Max. Device Voltage (VD)
Max. RF Input Power
100 mA
6V
+15 dBm
Max. Junction Temp. (TJ)
Operating Temp. Range (TL)
Max. Storage Temp.
+150°C
-40°C to +85°C
+150°C
Operation of this device beyond any one of these limits may
cause permanent damage. For reliable continous operation,
the device voltage and current must not exceed the maximum
operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD < (TJ - TL) / RTH, j-l
OIP3 vs. Frequency
VD= 4.8 V, ID= 80 mA
45
+25°C
40 TL -40°C
+85°C
35
30
25
20
15
0 0.5 1 1.5 2 2.5 3 3.5
Frequency (GHz)
22
20
18
16
14
12
10
0
P1dB vs. Frequency
VD= 4.8 V, ID= 80 mA
TL
+25°C
-40°C
+85°C
0.5 1 1.5 2 2.5 3 3.5
Frequency (GHz)
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
2
http://www.sirenza.com
EDS-101104 Rev. OBS
No Preview Available ! |
OBSOLETE Preliminary
NGA-486 DC-5 GHz Cascadable MMIC Amplifier
18
15
12
9
6
3
0
0
-5
-10
-15
-20
-25
-30
0
|S21| vs. Frequency
VD= 4.8 V, ID= 80 mA
TL
+25°C
-40°C
+85°C
123456
Frequency (GHz)
|S12| vs. Frequency
VD= 4.8 V, ID= 80 mA
TL
+25°C
-40°C
+85°C
123456
Frequency (GHz)
-5
-10
-15
-20
-25
-30
-35
0
-5
-10
-15
-20
-25
-30
-35
0
|S11| vs. Frequency
VD= 4.8 V, ID= 80 mA
+25°C
TL -40°C
+85°C
123456
Frequency (GHz)
|S22| vs. Frequency
VD= 4.8 V, ID= 80 mA
+25°C
TL
-40°C
+85°C
123456
Frequency (GHz)
VD vs. ID over Temperature for fixed
VS= 8 V, RBIAS= 39 Ohms *
95
VD vs. Temperature for Constant ID = 80 mA
5.4
90
85 +85°C
80
75
70
+25°C
-40°C
5.2
5.0
4.8
4.6
65
4.6
4.7 4.8 4.9
VD(Volts)
5.0
4.4
-40
-15 10
35
Temperature (°C)
60
85
* Note: In the applications circuit on page 4, RBIAS compensates for voltage and current variation over temperature.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
3
http://www.sirenza.com
EDS-101104 Rev. OBS
Скачать PDF:
[ NGA-486.PDF Даташит ]
Номер в каталоге | Описание | Производители |
NGA-486 | Cascadable InGap/GaAS HBT MMIC Amplifier | Sirenza Microdevices |
NGA-489 | InGaP/GaAs HBT MMIC Amplifier | Sirenza Microdevices |
Номер в каталоге | Описание | Производители |
TL431 | 100 мА, регулируемый прецизионный шунтирующий регулятор |
Unisonic Technologies |
IRF840 | 8 А, 500 В, N-канальный МОП-транзистор |
Vishay |
LM317 | Линейный стабилизатор напряжения, 1,5 А |
STMicroelectronics |
DataSheet26.com | 2020 | Контакты | Поиск |