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SDM-09060-B1FY PDF даташит

Спецификация SDM-09060-B1FY изготовлена ​​​​«Sirenza Microdevices» и имеет функцию, называемую «Class AB 65W Power Amplifier Module».

Детали детали

Номер произв SDM-09060-B1FY
Описание Class AB 65W Power Amplifier Module
Производители Sirenza Microdevices
логотип Sirenza Microdevices логотип 

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SDM-09060-B1FY Даташит, Описание, Даташиты
Product Description
Sirenza Microdevices’ SDM-09060-B1F 65W power module is a robust
impedance matched, single-stage, push-pull Class AB amplifier mod-
ule suitable for use as a power amplifier driver or output stage. The
power transistors are fabricated using Sirenza's latest, high perfor-
mance LDMOS process. It is a drop-in, no-tune solution for high power
applications requiring high efficiency, excellent linearity, and unit-to-
unit repeatability. It is internally matched to 50 ohms.
Functional Block Diagram
SDM-09060-B1F
SDM-09060-B1FY
925-960 MHz Class AB
65W Power Amplifier Module
Pb RoHS Compliant
& Green Package
Vgs1
Gnd
RFin
+3V DC to +6 V DC
180o
Balun
Gnd
0o
Vgs2
+3V DC to +6 V DC
+28V DC
0o
Balun
180 o
+28V DC
Case Flange = Ground
Key Specifications
Vds1
Product Features
Gnd Available in RoHS compliant packaging
50 W RF impedance
RFout 65W Output P1dB
Single Supply Operation : Nominally 28V
Gnd High Gain: 17 dB at 942 MHz
High Efficiency : 44% at 942 MHz
Vds2 ESD Protection: JEDEC Class 2 (2000V HBM)
Applications
Base Station PA driver
Repeater
CDMA
GSM / EDGE
Symbol
Parameter
Units Min. Typ.
Frequency
Frequency of Operation
MHz 925
-
P1dB
Gain
Output Power at 1dB Compression, 943 MHz
Gain at 60W PEP, 942MHz and 943MHz
W 60 65
dB 16 17
Gain Flatness
Peak-to-Peak Gain Variation, 60W PEP, 925 - 960MHz
dB - 0.3
Efficiency
Drain Efficiency at 60W PEP, 942MHz and 943MHz
% 32 34
Efficiency
Drain Efficiency at 60W CW, 942MHz
% 44
IRL Input Return Loss 60W PEP Output Power, 925 - 960MHz
dB - -15
IMD 3rd Order IMD Product, 60W PEP, 942MHz and 943MHz
dBc - -31
Delay
Signal Delay from Pin 3 to Pin 8
nS - 4.0
Phase Linearity
Deviation from Linear Phase (Peak-to-Peak)
Deg -
0.5
RTH Thermal Resistance (Junction to Case)
Test Conditions Zin = Zout = 50, VDD = 28.0V, IDQ1 = IDQ2 =300mAT TFlange = 25ºC
ºC/W
1.5
Max.
960
-
-
0.5
-
-
-12
-27
-
-
Quality Specifications
Parameter
Description
ESD Rating
Human Body Model
MTTF
200oC Channel
Unit
Volts
Hours
Typical
2000
1.2 X 106
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such
information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices
does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 S. Technology Court,
Phone: (800) SMI-MMIC
http://www.sirenza.com
Broomfield, CO 80021
1 EDS-104211Rev D









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SDM-09060-B1FY Даташит, Описание, Даташиты
SDM-09060-B1F 925-960 MHz 65W Power Amp Module
Pin Description
Pin # Function
Description
1
2,4,7,9
VGS1
Ground
LDMOS FET Q1 gate bias. VGSTH 3.0 to 5.0 VDC. See Notes 2, 3 and 4
Module Topside ground.
3
RF Input
Module RF input. This pin is internally connected to DC ground. Do not apply DC voltages to the RF leads. Care must be
taken to protect against video transients that may damage the active devices.
5
VGS2
LDMOS FET Q2 gate bias. VGSTH 3.0 to 5.0 VDC. See Notes 2, 3 and 4
6 VD2 LDMOS FET Q2 drain bias. See Note 1.
8
RF Output
Module RF output. This pin is internally connected to DC ground. Do not apply DC voltages to the RF leads. Care must be
taken to protect against video transients that may damage the active devices.
10
Flange
VD1
Ground
LDMOS FET Q1 drain bias. See Note 1.
Baseplate provides electrical ground and a thermal transfer path for the device. Proper mounting assures
optimal performance and the highest reliability. See Sirenza applications note AN-054 Detailed Installation Instructions for
Power Modules.
Simplified Device Schematic
1
10
2
Q1
3
4 Q2
9
8
7
6
5
Case Flange = Ground
Absolute Maximum Ratings
Parameters
Value
Unit
Drain Voltage (VDD)
RF Input Power
35 V
+37 dBm
Load Impedance for Continuous Operation Without
Damage
5:1 VSWR
Control (Gate) Voltage, VDD = 0 VDC
15 V
Output Device Channel Temperature
+200
ºC
Operating Temperature Range
-20 to
+90
ºC
Storage Temperature Range
-40 to
+100
ºC
Operation of this device beyond any one of these limits may cause per-
manent damage. For reliable continuous operation see typical setup val-
ues specified in the table on page one.
Note 1:
Internal RF decoupling is included on all bias leads. No addi-
tional bypass elements are required, however some applica-
tions may require energy storage on the VD leads to
accommodate modulated signals.
Note 2:
Gate voltage must be applied to VGS leads simultaneously with
or after application of drain voltage to prevent potentially
destructive oscillations. Bias voltages should never be applied
to a module unless it is properly terminated on both input and
output.
Note 3:
The required VGS corresponding to a specific IDQ will vary from
module to module and may differ between VGS1 and VGS2 on
the same module by as much as ±0.10 volts due to the normal
die-to-die variation in threshold voltage for LDMOS transistors.
Note 4:
The threshold voltage (VGSTH) of LDMOS transistors varies with
device temperature. External temperature compensation may
be required. See Sirenza application notes AN-067 LDMOS
Bias Temperature Compensation.
Note 5:
This module was designed to have it's leads hand
soldered to an adjacent PCB. The maximum soldering iron tip
temperature should not exceed 700° C, and the soldering iron
tip should not be in direct contact with the lead for longer than
10 seconds. Refer to app note AN054 (www.sirenza.com) for
further installation instructions.
Caution: ESD Sensitive
Appropriate precaution in handling, packaging
and testing devices must be observed.
303 S. Technology Court
Broomfield, CO 80021
Phone: (800) SMI-MMIC
2
http://www.sirenza.com
EDS-104211 Rev D









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SDM-09060-B1FY Даташит, Описание, Даташиты
SDM-09060-B1F 925-960 MHz 65W Power Amp Module
Typical Performance Curves
2 Tone Gain, Efficiency, Linearity and IRL vs Frequency
Vdd=28V, Idq=0.6A, Pout=60W PEP, Delta F=1 MHz
70
Gain
Efficiency
0
IM3 IM5
60
IM7 IRL
-10
50 -20
40 -30
30 -40
20 -50
10 -60
0
900
920 940 960
Frequency (MHz)
-70
980
2 Tone Gain, Efficiency, Linearity vs Pout
Vdd=28V, Idq=0.6A, Freq=942 MHz, Delta F=1 MHz
45 -25
40 -30
35 -35
30 -40
25 -45
20 -50
15 -55
10
5
0
0
Gain
IM3
IM7
Efficiency
IM5
-60
-65
-70
20 40 60 80 100
Pout (W PEP)
CW Gain, Efficiency, IRL vs Frequency Vdd=28V, Idq=0.6A,
Pout=60W
50 0
40 -5
30 Gain
-10
Efficiency
IRL
20 -15
10 -20
0
900
920 940 960
Frequency (MHz)
-25
980
20
19
18
17
16
15
14
13
12
11
10
9
8
0
CW Gain, Efficiency vs Pout
Vdd=28V, Idq=0.6A, Freq=942 MHz
Gain
Efficiency
20 40 60 80
Pout (W)
60
55
50
45
40
35
30
25
20
15
10
5
0
100
303 S. Technology Court
Broomfield, CO 80021
Phone: (800) SMI-MMIC
3
http://www.sirenza.com
EDS-104211 Rev D










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SDM-09060-B1FClass AB 65W Power Amplifier ModuleSirenza Microdevices
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SDM-09060-B1FYClass AB 65W Power Amplifier ModuleSirenza Microdevices
Sirenza Microdevices

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