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NJ26 PDF даташит

Спецификация NJ26 изготовлена ​​​​«INTERFET» и имеет функцию, называемую «Silicon Junction Field-Effect Transistor».

Детали детали

Номер произв NJ26
Описание Silicon Junction Field-Effect Transistor
Производители INTERFET
логотип INTERFET логотип 

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NJ26 Даташит, Описание, Даташиты
F-8
NJ26 Process
Silicon Junction Field-Effect Transistor
¥ Low-Noise, High Gain Amplifier
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig
10 mA
Operating Junction Temperature, Tj
+150°C
Storage Temperature, Ts
– 65°C to +175°C
Devices in this Databook based on the NJ26A Process.
Datasheet
2N4416, 2N4416A
2N5484, 2N5485
2N5486
J304, J305
VCR11N
www.DataSheet4U.com
01/99
G
S-D
S-D
G
Die Size = 0.016" X 0.016"
All Bond Pads = 0.004" Sq.
Substrate is also Gate.
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Reverse Gate Leakage Current
Drain Saturation Current (Pulsed)
Gate Source Cutoff Voltage
Dynamic Electrical Characteristics
Forward Transconductance
Input Capacitance
Feedback Capacitance
Equivalent Noise Voltage
NJ26 Process
Min Typ Max Unit
Test Conditions
V(BR)GSS – 30 – 40
V IG = – 1 µA, VDS = ØV
IGSS – 10 – 100 pA VGS = – 20V, VDS = ØV
IDSS 2
22 mA VDS = 15V, VGS = ØV
VGS(OFF)
–1
– 5 V VDS = 15V, ID = 1 nA
gfs
6
mS VDS = 15V, VGS = ØV
f = 1 kHz
Ciss
4.3 5.0 pF VDS = 15V, VGS = ØV
f = 1 MHz
Crss
1 1.5 pF VDS = 15V, VGS = ØV
f = 1 MHz
N
4
nV/HZ VDS = 10V, ID = 5 mA
f = 1 kHz
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
www.interfet.com









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NJ26 Даташит, Описание, Даташиты
01/99
F-9
NJ26 Process
Silicon Junction Field-Effect Transistor
10
8
6
4
2
0
Drain Current as a Function of VDS
VGS(OFF) = Ð2.1 V
VGS = Ø V
VGS = – 0.5 V
VGS = –1.0 V
VGS = –1.5 V
VGS = –2.0 V
5 10 15
Drain to Source Voltage in Volts
20
Drain Saturation Current as a Function of VGS(OFF)
25
20
15
10
5
0 –1 –2 –3 –4 –5 –6
Gate Source Cutoff Voltage in Volts
Input Capacitance as a Function of VGS
5
VDS = Ø V
4
VDS = 15 V
3
2
1
0 – 4 – 8 – 12 – 16
Gate Source Voltage in Volts
Gfs as a Function of VGS(OFF)
10
8
6
4
2
0 –1 –2 –3 –4 –5 –6
Gate Source Cutoff Voltage in Volts
IDSS as a Function of RDS
20
16
12
8
4
100 150 200 250 300
Drain Source (ON) Resistance in
Feedback Capacitance as a Function of VGS
2.5
VDS = Ø V
2.0
VDS = 5 V
1.5
1.0
0.5
0 – 4 – 8 – 12 – 16
Gate Source Voltage in Volts










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Номер в каталогеОписаниеПроизводители
NJ26Silicon Junction Field-Effect TransistorINTERFET
INTERFET
NJ26ASilicon Junction Field-Effect TransistorInterFET
InterFET
NJ26LSilicon Junction Field-Effect Transistor Low-Noise High Gain AmplifierInterFET
InterFET

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

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