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Datasheet NJ42 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1NJ42Silicon Junction Field-Effect Transistor

F-24 01/99 NJ42 Process Silicon Junction Field-Effect Transistor ¥ General Purpose Amplifier ¥ High Breakdown Voltage Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C S D S Die Size = 0.032" X
INTERFET
INTERFET
transistor


NJ4 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1NJ42Silicon Junction Field-Effect Transistor

F-24 01/99 NJ42 Process Silicon Junction Field-Effect Transistor ¥ General Purpose Amplifier ¥ High Breakdown Voltage Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C S D S Die Size = 0.032" X
INTERFET
INTERFET
transistor
2NJ450Silicon Junction Field-Effect Transistor

F-36 01/99 NJ450 Process Silicon Junction Field-Effect Transistor ¥ LOW R(on) Switch ¥ Low-Noise, High Gain Amplifier Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C S-D G Devices in this Da
InterFET
InterFET
transistor
3NJ450LSilicon Junction Field-Effect Transistor

F-38 01/99 NJ450L Process Silicon Junction Field-Effect Transistor ¥ Low-Current ¥ Low Gate Leakage Current ¥ High Input Impedance Absolute maximum ratings at 25¡C free-air temperature. Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175
InterFET
InterFET
transistor



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Número de pieza Descripción Fabricantes PDF
SPS122

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