PDF HMC591LP5 Data sheet ( Hoja de datos )

Número de pieza	HMC591LP5
Descripción	high dynamic range GaAs PHEMT MMIC 1 Watt Power Amplifi
Fabricantes	Hittite Microwave Corporation
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No Preview Available ! HMC591LP5 / 591LP5E v02.0107 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6.0 - 9.5 GHz 5 Typical Applications Features The HMC591LP5 / HMC591LP5E is ideal for use as a power amplifier for: • Point-to-Point Radios • Point-to-Multi-Point Radios • Test Equipment & Sensors • Military End-Use • Space Saturated Output Power: +33 dBm @ 20% PAE Output IP3: +41 dBm Gain: 18 dB DC Supply: +7.0 V @ 1340 mA 50 Ohm Matched Input/Output QFN Leadless SMT Packages, 25 mm2 Functional Diagram www.DataSheet4U.com General Description The HMC591LP5 & HMC591LP5E are high dynamic range GaAs PHEMT MMIC 2 Watt Power Amplifiers which operate from 6 to 9.5 GHz. The amplifier provides 18 dB of gain, +33 dBm of saturated power, and 19% PAE from a +7.0V supply. This 50 Ohm matched amplifier does not require any external components and the RF I/Os are DC blocked for robust operation. For applications which require optimum OIP3, Idd should be set for 940 mA, to yield +41 dBm OIP3. For applications which require optimum out- put P1dB, Idd should be set for 1340 mA, to yield +33 dBm Output P1dB. Electrical Specifications, TA = +25° C, Vdd = +7V, Idd = 1340 mA[1] Parameter Min. Typ. Max. Min. Typ. Frequency Range 6-8 6 - 9.5 Gain 16 19 15 18 Gain Variation Over Temperature 0.05 0.05 Input Return Loss 14 12 Output Return Loss 12 10 Output Power for 1 dB Compression (P1dB) 30 32 30 33 Saturated Output Power (Psat) 32.5 33 Output Third Order Intercept (IP3)[2] 41 41 Supply Current (Idd) 1340 1340 [1] Adjust Vgg between -2 to 0V to achieve Idd= 1340 mA typical. [2] Measurement taken at 7V @ 940mA, Pin/Tone = -15 dBm Max. Units GHz dB dB/ °C dB dB dBm dBm dBm mA 5 - 598 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 1 page 5 Outline Drawing v02.0107 HMC591LP5 / 591LP5E GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6.0 - 9.5 GHz www.DataSheet4U.com Package Information Part Number Package Body Material HMC591LP5 Low Stress Injection Molded Plastic HMC591LP5E RoHS-compliant Low Stress Injection Molded Plastic [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Lead Finish Sn/Pb Solder 100% matte Sn MSL Rating MSL1 [1] MSL1 [2] Package Marking [3] H591 XXXX H591 XXXX 5 - 602 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 Page

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Número de pieza	Descripción	Fabricantes
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