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PDF HMC570 Data sheet ( Hoja de datos )
| Número de pieza | HMC570 | |
| Descripción | GaAs MMIC I/Q DOWNCONVERTER | |
| Fabricantes | Hittite Microwave | |
| Logotipo |  |
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v00.0606
HMC570
GaAs MMIC I/Q DOWNCONVERTER
17 - 21 GHz
Typical Applications
The HMC570 is ideal for:
• Point-to-Point and Point-to-Multi-Point Radio
3 • Military Radar, EW & ELINT
• Satellite Communications
Features
10 dB Conversion Gain
Image Rejection: 17 dB
2 LO to RF Isolation: 35 dB
Noise Figure: 3 dB
Input IP3: +3 dBm
Die Size: 2.33mm x 2.73mm x 0.10mm
3 - 204
Functional Diagram
General Description
The HMC570 is a compact GaAs MMIC I/Q
downconverter chip which provides a small signal
conversion gain of 10 dB with a noise figure of 3 dB
and 17 dB of image rejection across the frequency
band. The device utilizes an LNA followed by an image
reject mixer which is driven by an active x2 multiplier.
The image reject mixer eliminates the need for a filter
following the LNA, and removes thermal noise at the
image frequency. I and Q mixer outputs are provided
and an external 90° hybrid is needed to select the
required sideband. All data shown below is taken
with the chip mounted in a 50 Ohm test fixture and
includes the effects of 1 mil diameter x 20 mil length
bond wires on each port. This product is a much
smaller alternative to hybrid style image reject mixer
downconverter assemblies.
Electrical Specifications, TA = +25° C, IF = 100 MHz, LO = +4 dBm, Vdd = 3.5 Vdc*
Parameter
Frequency Range, RF
Frequency Range, LO
Frequency Range, IF
Conversion Gain (As IRM)
Noise Figure
Image Rejection
1 dB Compression (Input)
2 LO to RF Isolation
2 LO to IF Isolation
IP3 (Input)
Amplitude Balance
Phase Balance
Total Supply Current
*Data taken as IRM with external IF hybrid
Min.
8
14
-7
35
28
-5
Typ.
17.7 - 19.7
7 - 12
DC - 3.5
10
3
17
-4
40
30
-2
0.5
12
125
Max.
150
Min. Typ. Max.
17 - 21
7 - 12
DC - 3.5
10 12
4
16 22
-10 -6
30 35
25 30
-6 +3
0.5
4
125 150
Units
GHz
GHz
GHz
dB
dB
dB
dBm
dB
dB
dBm
dB
Deg
mA
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 page  
v00.0606
HMC570
GaAs MMIC I/Q DOWNCONVERTER
17 - 21 GHz
3
Pad Descriptions
Pad Number
Function
1 VddRF
2 VddLO2
3 VddLO
4 LO
5 IF1
6 IF2
7 RF
GND
Description
Power supply for RF LNA.
External RF bypass capacitors are required.
Power supply for second stage of LO amplifier.
External RF bypass capacitors are required.
Power supply for first stage of LO amplifier.
External RF bypass capacitors are required.
This pad is AC coupled and matched
to 50 Ohms from 7 - 12 GHz.
This pad is DC coupled for applications not requir-
ing operation to DC. This port should be DC blocked
externally using a series capacitor whose value has
been chosen to pass the necessary frequency range.
For operation to DC, this pad must not source /sink more
than 3 mA of current or die non - function and possible
die failure will result.
This pad is AC coupled and matched
to 50 Ohms from 17 - 21 GHz.
The backside of the die must be
connected to RF/DC ground.
Interface Schematic
Typical Application
3 - 208
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet HMC570.PDF ] | |
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