DataSheet26.com

SBR10U150CTF PDF даташит

Спецификация SBR10U150CTF изготовлена ​​​​«Dionics» и имеет функцию, называемую «Super Barrier Rectifiers».

Детали детали

Номер произв SBR10U150CTF
Описание Super Barrier Rectifiers
Производители Dionics
логотип Dionics логотип 

3 Pages
scroll

No Preview Available !

SBR10U150CTF Даташит, Описание, Даташиты
SBR10U150CT
SBR10U150CTF
SBR10U150CTI
SBR10U150CTB
Using state-of-the-art SBR IC process technology,
the following features are made possible in a single device:
Major ratings and characteristics
Characteristics
Values
IF(AV) Rectangular Waveform
10
VRRM
VF@5A, Tj=125OC
Tj (operating/storage)
150
0.60
-65 to 175
Units
A
V
V, typ
OC
ELECTRICAL:
* Ultra-Low Forward Voltage Drop
* Reliable High Temperature Operation
* Super Barrier Design
* Softest, Fast Switching Capability
* 175oC Operating Junction Temperature
www.DataSheet4U.com
Device optimized for high temperature
Power Supply applications
MECHANICAL:
* Molded Plastic TO-220AB, TO-262, TO-263, and
ITO-220 packages
SBR10U150CT
Case Styles
SBR10U150CTF
SBR10U150CTI
SBR10U150CTB
Anode 1
2
Common
Cathode
3
Anode
TO-220AB
2
1Anode
Common
Cathode
3
Anode
ITO-220
2
Common
1Anode Cathode
3
Anode
TO-262
Anode1
2
Common
Cathode
3
Anode
TO-263
________________________________________________________________________________________________
www.apdsemi.com
Version 2.0 - April 2006
1









No Preview Available !

SBR10U150CTF Даташит, Описание, Даташиты
SBR10U150CT
SBR10U150CTF
SBR10U150CTI
SBR10U150CTB
Maximum Ratings and Electrical Characteristics
(at 25OC unless otherwise specified)
SYMBOL
DC Blocking Voltage
Working Peak Reverse Voltage
Peak Repetitive Reverse Voltage
VRM
VRWM
VRRM
Average Rectified Forward Current
(Rated VR-20Khz Square Wave) - 50% duty
cycle
IO
Peak Forward Surge Current - 1/2 60hz
Peak Repetitive Reverse Surge Current
(2uS-1Khz)
IFSM
IRRM
Instantaneous Forward Voltage (per leg)
IF = 5A; TJ = 25OC
IF = 10A; TJ = 25OC
Iwww.DataSheet4U.comF = 5A; TJ= 125OC
Maximum Instantaneous Reverse Current at
Rated VRM
TJ = 25OC
TJ = 125OC
Maximum Rate of Voltage Change
(at Rated VR)
Maximum Thermal Resistance JC (per leg)
Package = TO-220AB, TO-262, & TO-263
Package = ITO-220
Operating and Storage Junction Temperature
* Pulse width < 300 uS, Duty cycle < 2%
VF
IR *
dv/dt
RθJC
TJ
150
10
150
3
Typ Max
--- 0.79
--- 0.88
--- 0.63
Typ Max
--- 0.2
--- 25
10,000
2
4
-65 to +175
UNITS
Volts
Amps
Amps
Amps
Volts
mA
mA
V/uS
OC/W
OC
________________________________________________________________________________________________
www.apdsemi.com
Version 2.0 - April 2006
2









No Preview Available !

SBR10U150CTF Даташит, Описание, Даташиты
SBR10U150CT
SBR10U150CTF
SBR10U150CTI
SBR10U150CTB
100
10
1
0.1
0.01
0.001
0
Tj=175C
Tj=125C
Tj=75C
Tj=25C
25 50 75 100 125 150
Vr, Reverse Voltage (Volts)
Figure 1: Typical Reverse Current
175
100
10
Tj=175C
Tj=125C
1
0.1
0.20
0.30
Tj=75C
Tj=25
0.40 0.50 0.60 0.70 0.80
Vf, Instantaneous Forward Voltage (Volts)
0.90
1.00
Figure 2: Typical Forward Voltage
www.DataSheet4U.com
5
4
3
2
1
0
0 25 50 75 100 125 150 175
Tc, Case Temp (C)
Figure 3: Current Derating, Case
APD SEMICONDUCTOR reserves the right to make changes without further notice to any products herein. APD SEMICONDUCTOR makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does APD SEMICONDUCTOR assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APD SEMICONDUCTOR data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APD SEMICONDUCTOR does not convey any license
under its patent rights nor the rights of others. APD SEMICONDUCTOR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the APD SEMICONDUCTOR product could create a situation where personal injury or death may occur. Should Buyer
purchase or use APD SEMICONDUCTOR products for any such unintended or unauthorized application, Buyer shall indemnify and hold APD SEMICONDUCTOR and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or
unauthorized use, even if such claim alleges that APD SEMICONDUCTOR was negligent regarding the design or manufacture of the part..
1 Lagoon Drive, Suite 410, Redwood City, CA 94065, USA
Ph: 650 508 8896 FAX: 650 508 8865
Homepage: www.apdsemi.com
________________________________________________________________________________________________
www.apdsemi.com
Version 2.0 - April 2006
3










Скачать PDF:

[ SBR10U150CTF.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
SBR10U150CTSuper Barrier RectifiersDionics
Dionics
SBR10U150CTSUPER BARRIER RECTIFIERDiodes
Diodes
SBR10U150CTBSuper Barrier RectifiersDionics
Dionics
SBR10U150CTFSuper Barrier RectifiersDionics
Dionics

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск