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PDF SBR13003 Data sheet ( Hoja de datos )

Número de pieza SBR13003
Descripción High Voltage Fast-Switching NPN Power Transistor
Fabricantes SemiWell Semiconductor 
Logotipo SemiWell Semiconductor Logotipo



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No Preview Available ! SBR13003 Hoja de datos, Descripción, Manual

SemiWell Semiconductor
SBR13003
High Voltage Fast-Switching NPN Power Transistor
Features
- Very High Switching Speed (Typical [email protected])
- Minimum Lot-to-Lot hFE Variation
- Low VCE(sat) (Typical [email protected]/0.25A)
- Wide Reverse Bias S.O.A
General Description
This devices is designed for high voltage, high speed switching
characteristic required such as lighting system, switching regulator,
inverter and deflection circuit.
Symbol
1.Base
2.Collector
3.Emitter
TO-126
Absolute Maximum Ratings
Symbol
VCES
VCEO
VEBO
IC
ICM
IB
IBM
PC
TSTG
TJ
Parameter
Collector-Emitter Voltage ( VBE = 0 )
Collector-Emitter Voltage ( IB = 0 )
Emitter-Base Voltage ( IC = 0 )
Collector Current
Collector Peak Current ( tP 5 ms )
Base Current
Base Peak Current ( tP 5 ms )
Total Dissipation at TC = 25 °C
Storage Temperature
Max. Operating Junction Temperature
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
123
Value
700
400
9.0
1.5
3.0
0.75
1.5
40
- 65 ~ 150
150
Value
3.12
89
Oct, 2002. Rev. 2
Copyright@S emiWell S emiconduct or Co., Ltd., All rights reserved
Units
V
V
V
A
A
A
A
W
°C
°C
Units
°C/W
°C/W
1/6

1 page




SBR13003 pdf
Inductive Load Switching & RBSOA Test Circuit
SBR13003
IB1
VBE(off)
IC
IB
RBB
LC
f
VCE
D.U.T
VClamp
VCC
Resistive Load Switching Test Circuit
RC
IB1
VBE(off)
IC
IB
RBB
VCE
D.U.T
VCC
5/6

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