CFB0303 PDF даташит
Спецификация CFB0303 изготовлена «Mimix Broadband» и имеет функцию, называемую «High Dynamic Range Low Noise GaAs FET». |
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Детали детали
Номер произв | CFB0303 |
Описание | High Dynamic Range Low Noise GaAs FET |
Производители | Mimix Broadband |
логотип |
2 Pages
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High Dynamic Range
Low Noise GaAs FET
August 2006 - Rev 03-Aug-06
Features
Low-Noise Figure from 0.8 to 2.0 GHz
High Gain
High Intercept Point
Highly Stable
Easily Matched to 50
70 mil Package
PHEMT Material
Applications
Cellular Base Stations
PCS Base Stations
Industrial Data Networks
CFB0303
Description
Celeritek’s CFB0303 is a high performance GaAs
PHEMT with 600 µm gate width and 0.25 µm gate length.
The low noise figure and high intercept point of this device
makes it well suited for use as the low-noise amplifier of the
Electrical Specifications (TA = 25°C, 2 GHz)
Parameters
Conditions
Vd = 4V, Id = 75 mA
Noise Figure 2
Associated Gain 2
Pout 1, 3
IP3 3
Id 3
@ Noise Figure
P-1
+5 dBm POUT/Tone
@ P-1
Transconductance
Saturated Drain Current
Pinchoff Voltages
Thermal Resistance
Vds = 4 V, Vgs = 0 V
Vds = 4 V, Vgs = 0 V
Vds = 4 V, Ids = 1 mA
@ Tcase = 150°C liquid crystal test
Notes: 1. @ Tcase = 25°C. Derate 5 mW/°C for Tcase >25°C.
2. Input matched for low noise.
3. Matched for power transfer.
base station receiver in PCS, Japanese PHS, AMPS, GSM and
other communications systems. The CFB0303 is in an indus-
try-standard 70 mil package. It is surface mountable and
available in tape and reel.
Min Typ
0.5
19.0 20.0
20.0 21.0
32 34
83
350
80 140
-0.3
200
Max
0.6
22.7
22.0
240
Units
dB
dB
dBm
dBm
mA
mho
mA
V
°C/W
Typical Scattering Parameters (TA = 25°C, VDS = 4 V, IDS = 75 mA)
Frequency
S11
S21 S12
(GHz)
Mag
Ang
Mag (dB) Ang MAG (dB)
0.5
0.98 -24
8.47 160
0.02
1.0
0.94 -44
8.20 147
0.03
2.0
0.85 -80
7.30 118 0.05
3.0
0.76 -112
6.30 94 0.07
4.0
0.70 -134
5.60 74 0.08
5.0
0.64 -154
5.13 54 0.09
ANG
77
69
51
37
29
19
S22
MAG
ANG
0.33 -9
0.32 -15
0.27 -36
0.25 -50
0.24 -55
0.23 -61
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 2
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
No Preview Available ! |
High Dynamic Range
Low Noise GaAs FET
August 2006 - Rev 03-Aug-06
Typical Noise Parameters (Vds = 4 V, Ids = 75 mA)
Frequency
(GHz)
Fmin 1
(dB)
Gamma Opt
Mag
Ang
Rn/50
0.8 0.4 0.6 27 0.19
1.0 0.4 0.6 29 0.17
1.2 0.4 0.6 32 0.18
1.4 0.4 0.6 35 0.18
1.6 0.4 0.5 38 0.17
1.8 0.4 0.5 41 0.16
2.0 0.5 0.5 45 0.15
2.2 0.5 0.5 49 0.15
2.4 0.5 0.5 54 0.14
2.6 0.5 0.5 60 0.13
Note: 1. Fmin values reflect the circuit losses in the test fixture when
matched to optimum noise figure.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous Dissipation1
Channel Temperature
Storage Temperature
Symbol
Vds
Vgs
Ids
Pt
Tch
Tstg
CFB0303
Rating
+8V
-5V
Idss
750 mW
175°C
-65°C to +150°C
Notes
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 2 of 2
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
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