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HMC475ST89E PDF даташит

Спецификация HMC475ST89E изготовлена ​​​​«Hittite Microwave» и имеет функцию, называемую «InGaP HBT GAIN BLOCK MMIC AMPLIFIER».

Детали детали

Номер произв HMC475ST89E
Описание InGaP HBT GAIN BLOCK MMIC AMPLIFIER
Производители Hittite Microwave
логотип Hittite Microwave логотип 

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HMC475ST89E Даташит, Описание, Даташиты
HMC475ST89 / 475ST89E
v01.0107
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4.5 GHz
5
Typical Applications
Features
The HMC475ST89 / HMC475ST89E is an ideal RF/IF
gain block & LO or PA driver:
• Cellular / PCS / 3G
• Fixed Wireless & WLAN
• CATV, Cable Modem & DBS
• Microwave Radio & Test Equipment
• IF and RF Applications
P1dB Output Power: +22 dBm
Gain: 21.5 dB
Output IP3: +35 dBm
Cascadable 50 Ohm I/Os
Single Supply: +8V to +12V
Industry Standard SOT89 Package
Functional Diagram
www.DataSheet4U.com
General Description
The HMC475ST89(E) is a InGaP Heterojunction
Bipolar Transistor (HBT) Gain Block MMIC SMT
amplifier covering DC to 4.5 GHz. Packaged in an
industry standard SOT89, the amplifier can be used
as a cascadable 50 Ohm RF/IF gain stage as well as
a LO or PA driver with up to +25 dBm output power.
The HMC475ST89(E) offers 21.5 dB of gain and +35
dBm output IP3 at 850 MHz while requiring only 110
mA from a single positive supply. The Darlington
topology results in reduced sensitivity to normal
process variations and excellent gain stability over
temperature while requiring a minimal number of
external bias components.
5 - 432
Electrical Specifications, Vs= 8.0 V, Rbias= 9.1 Ohm, TA = +25° C
Parameter
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Reverse Isolation
Output Power for 1 dB Compression (P1dB)
Output Third Order Intercept (IP3)
(Pout= 0 dBm per tone, 1 MHz spacing)
Noise Figure
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
4.0 - 4.5 GHz
DC - 4.5 GHz
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 4.5 GHz
DC - 1.0 GHz
1.0 - 4.5 GHz
DC - 4.5 GHz
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
4.0 - 4.5 GHz
DC - 2.5 GHz
2.5 - 4.5 GHz
DC - 3.0 GHz
3.0 - 4.5 GHz
Min.
19.5
17.5
14.5
11.5
9
19.0
18.0
17.5
13.0
11.0
Typ.
21.5
19.5
16.5
13.5
12
0.008
11
14
14
13
10
25
22.0
21.0
19.5
16.0
14.0
35
30
3.5
3.8
Supply Current (Icq)
110
Note: Data taken with broadband bias tee on device output.
Max.
0.012
135
Units
dB
dB
dB
dB
dB
dB/ °C
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dB
dB
mA
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com









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HMC475ST89E Даташит, Описание, Даташиты
v01.0107
Broadband Gain & Return Loss
25
20
15
10
5
S21
0 S11
-5 S22
-10
-15
-20
-25
-30
-35
-40
012345
FREQUENCY (GHz)
6
Input Return Loss vs. Temperature
0
-5
+25C
+85C
-10 -40C
-15
-20
-25
-30
-35
0
1234
FREQUENCY (GHz)
5
Reverse Isolation vs. Temperature
0
-5
-10 +25C
+85C
-15 -40C
-20
-25
-30
-35
-40
0
1234
FREQUENCY (GHz)
5
HMC475ST89 / 475ST89E
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4.5 GHz
Gain vs. Temperature
26
24
22
20
18
16
14
12
10
8
6
4
2
0
0
+25C
+85C
-40C
123
FREQUENCY (GHz)
4
5
5
Output Return Loss vs. Temperature
0
-5
+25C
+85C
-40C
-10
-15
-20
-25
0
1234
FREQUENCY (GHz)
5
Noise Figure vs. Temperature
10
9
8
7
6
5
4
3
2
1
0
0
+25C
+85C
-40C
1234
FREQUENCY (GHz)
5
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 433









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HMC475ST89E Даташит, Описание, Даташиты
v01.0107
5
P1dB vs. Temperature
26
24
22
20
18
16
14
12
10
8
6
4
2
0
0
+25C
+85C
-40C
123
FREQUENCY (GHz)
4
5
HMC475ST89 / 475ST89E
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4.5 GHz
Psat vs. Temperature
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
0
+25C
+85C
-40C
123
FREQUENCY (GHz)
4
5
Output IP3 vs. Temperature
45
40
35
30
25
+25C
+85C
20 -40C
15
0
123
FREQUENCY (GHz)
4
5
Gain, Power & OIP3 vs. Supply Voltage
for Constant Icc= 110 mA @ 850 MHz
42
39
36
33
30
27
24
21
18
15
12
9
6
3
0
8
Gain
P1dB
Psat
OIP3
9 10 11
Vs (Vdc)
12
Vcc vs. Icc Over Temperature for
Fixed Vs= 8V, RBIAS= 9.1 Ohms
140
135
130
125
120
115
110
105
100
95
90
85
80
75
6.9
+85C
+25C
-40C
7 7.1 7.2 7.3 7.4 7.5
Vcc (Vdc)
5 - 434
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com










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Номер в каталогеОписаниеПроизводители
HMC475ST89InGaP HBT GAIN BLOCK MMIC AMPLIFIERHittite Microwave
Hittite Microwave
HMC475ST89EInGaP HBT GAIN BLOCK MMIC AMPLIFIERHittite Microwave
Hittite Microwave

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