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PDF HMC580ST89 Data sheet ( Hoja de datos )
| Número de pieza | HMC580ST89 | |
| Descripción | InGaP HBT GAIN BLOCK MMIC AMPLIFIER | |
| Fabricantes | Hittite Microwave | |
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HMC580ST89 / 580ST89E
v04.0710
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 1 GHz
Typical Applications
8 The HMC580ST89 / HMC580ST89E is ideal forr:
• Cellular / PCS / 3G
• Fixed Wireless & WLAN
• CATV, Cable Modem & DBS
• Microwave Radio & Test Equipment
• IF & RF Applications
Functional Diagram
Features
P1dB Output Power: +22 dBm
Gain: 22 dB
Output IP3: +37 dBm
Cascadable 50 Ohm I/Os
Single Supply: +5V
Industry Standard SOT89 Package
General Description
The HMC580ST89 & HMC580ST89E are InGaP
Heterojunction Bipolar Transistor (HBT) Gain
Block MMIC SMT amplifiers covering DC to 1 GHz.
Packaged in an industry standard SOT89, the
amplifier can be used as a cascadable 50 Ohm RF
or IF gain stage as well as a PA or LO driver with
up to +26 dBm output power. The HMC580ST89(E)
offers 22 dB of gain with a +37 dBm output IP3 at 250
MHz, and can operate directly from a +5V supply. The
HMC580ST89(E) exhibits excellent gain and output
power stability over temperature, while requiring a
minimal number of external bias components.
8 - 146
Electrical Specifications, Vs= 5V, Rbias= 1.8 Ohm, TA = +25° C
Parameter
Min.
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Reverse Isolation
Output Power for 1 dB Compression (P1dB)
Output Third Order Intercept (IP3)
(Pout= 0 dBm per tone, 1 MHz spacing)
Noise Figure
DC - 0.25 GHz
0.25 - 0.50 GHz
0.50 - 1.00 GHz
DC - 1.0 GHz
DC - 0.25 GHz
0.25 - 0.50 GHz
0.50 - 1.00 GHz
DC - 0.50 GHz
0.50 - 1.00 GHz
DC - 1.0 GHz
DC - 0.25 GHz
0.25 - 0.50 GHz
0.50 - 1.00 GHz
DC - 0.25 GHz
0.25 - 0.50 GHz
0.50 - 1.00 GHz
DC - 1.0 GHz
19
18.5
15
19
17.5
16
Supply Current (Icq)
Typ.
22
21
17
0.005
35
28
19
12
11
23
22
20.5
19
37
35
33
2.8
88
Max.
110
Units
dB
dB
dB
dB/ °C
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dB
mA
Note: Data taken with broadband bias tee on device output.
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
1 page  
Pin Descriptions
8 Pin Number
Function
1 IN
3 OUT
2, 4 GND
v04.0710
HMC580ST89 / 580ST89E
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 1 GHz
Description
This pin is DC coupled.
An off chip DC blocking capacitor is required.
RF output and DC Bias (Vcc) for the output stage.
These pins and package bottom
must be connected to RF/DC ground.
Interface Schematic
Application Circuit
Recommended Bias Resistor Values
for Icc = 88 mA, Rbias = (Vs - Vcc) / Icc, Vs > +5V
Supply Voltage (Vs)
RBIAS VALUE
RBIAS POWER RATING
6V
13 Ω
¼W
8V
36 Ω
½W
Note:
1. External blocking capacitors are required on
RFIN and RFOUT.
2. RBIAS provides DC bias stability over temperature.
8 - 150
Recommended Component Values for Key Application Frequencies with Vs = +5V
Component
L1
C1, C2
Rbias
50
270 nH
0.01 μF
0 Ohms
Frequency (MHz)
250 400
110 nH
110 nH
820 pF
820 pF
1.5 Ohms
1.5 Ohms
900
56 nH
100 pF
1.8 Ohms
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet HMC580ST89.PDF ] | |
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