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ZXMN10A25G PDF даташит

Спецификация ZXMN10A25G изготовлена ​​​​«Zetex Semiconductors» и имеет функцию, называемую «100V SOT223 N-channel enhancement mode MOSFET».

Детали детали

Номер произв ZXMN10A25G
Описание 100V SOT223 N-channel enhancement mode MOSFET
Производители Zetex Semiconductors
логотип Zetex Semiconductors логотип 

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ZXMN10A25G Даташит, Описание, Даташиты
ZXMN10A25G
100V SOT223 N-channel enhancement mode MOSFET
Summary
V(BR)DSS
100
RDS(on) ()
0.125 @ VGS= 10V
0.150 @ VGS= 6V
ID (A)
4
3.7
Description
This new generation trench MOSFET from Zetex features a unique
structure which combininthe benefits of low on-resistance and fast
switching, making it ideal for high efficiency power management
applications.
www.DataSheet4U.com
Features
• Low on-resistance
• Fast switching speed
• Low gate drive
• SOT223 package
Applications
• DC-DC converters
• Power management functions
• Disconnect switches
• Motor control
Ordering information
Device
ZXMN10A25GTA
Reel size
(inches)
7
Tape width
(mm)
12
Quantity
per reel
1,000
D
G
S
S
DD
G
Pinout - top view
Device marking
ZXMN
10A25
Issue 1 - July 2006
© Zetex Semiconductors plc 2006
1
www.zetex.com









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ZXMN10A25G Даташит, Описание, Даташиты
ZXMN10A25G
Absolute maximum ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current @ VGS= 10V; Tamb=25°C(b)
@ VGS= 10V; Tamb=70°C(b)
@ VGS= 10V; Tamb=25°C(a)
Pulsed drain current(c)
Continuous source current (body diode)(b)
Pulsed source current (body diode)(c)
Power dissipation at Tamb =25°C(a)
Linear derating factor
Power dissipation at Tamb =25°C(b)
Linear derating factor
Operating and storage temperature range
Symbol
VDSS
VGS
ID
IDM
IS
ISM
PD
PD
Tj, Tstg
Limit
100
± 20
4
3.2
2.9
17
5.4
17
2
16
3.9
31
-55 to +150
Unit
V
V
A
A
A
A
W
mW/°C
W
mW/°C
°C
Thermal resistance
Parameter
Junction to ambient(a)
Junction to ambient(b)
Symbol
RJA
RJA
Limit
62.5
32
Unit
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
(b) For a device surface mounted on FR4 PCB measured at t Յ10 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width Յ300s - pulse width limited by maximum junction
temperature.
Issue 1 - July 2006
© Zetex Semiconductors plc 2006
2
www.zetex.com









No Preview Available !

ZXMN10A25G Даташит, Описание, Даташиты
Thermal characteristics
ZXMN10A25G
Issue 1 - July 2006
© Zetex Semiconductors plc 2006
3
www.zetex.com










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