ZXMN10B08E6 PDF даташит
Спецификация ZXMN10B08E6 изготовлена «Zetex Semiconductors» и имеет функцию, называемую «N-CHANNEL ENHANCEMENT MODE MOSFET». |
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Детали детали
Номер произв | ZXMN10B08E6 |
Описание | N-CHANNEL ENHANCEMENT MODE MOSFET |
Производители | Zetex Semiconductors |
логотип |
7 Pages
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ZXMN10B08E6
100V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V(BR)DSS = 100V; RDS(ON) = 0.230 ID = 1.9A
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
FEATURES
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• SOT23-6 package
APPLICATIONS
• DC - DC Converters
• Power Management Functions
• Disconnect switches
• Motor control
ORDERING INFORMATION
DEVICE
ZXMN10B08E6TA
ZXMN10B08E6TC
REEL
SIZE
7”
13”
TAPE QUANTITY
WIDTH PER REEL
8mm 3000 units
8mm 10000 units
DEVICE MARKING
• 10B8
SOT23-6
PINOUT
Top View
ISSUE 1 - OCTOBER 2005
1
SEMICONDUCTORS
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ZXMN10B08E6
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Gate Source Voltage
Continuous Drain Current VGS=10V; TA=25°C (b)
VGS=10V; TA=70°C (b)
VGS=10V; TA=25°C (a)
Pulsed Drain Current (c)
Continuous Source Current (Body Diode) (b)
Pulsed Source Current (Body Diode) (c)
Power Dissipation at TA=25°C (a)
Linear Derating Factor
Power Dissipation at TA=25°C (b)
Linear Derating Factor
Operating and Storage Temperature Range
SYMBOL
VDSS
VGS
ID
IDM
IS
ISM
PD
PD
Tj:Tstg
LIMIT
100
20
1.9
1.5
1.6
9
2.5
9
1.1
8.8
1.7
13.6
-55 to +150
UNIT
V
V
A
A
A
A
W
mW/°C
W
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
Junction to Ambient (a)
Junction to Ambient (b)
SYMBOL
RθJA
RθJA
VALUE
113
73
UNIT
°C/W
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at tр5 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300s - pulse width limited by maximum junction temperature. Refer to
Transient Thermal Impedance graph
ISSUE 1 - OCTOBER 2005
SEMICONDUCTORS
2
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CHARACTERISTICS
ZXMN10B08E6
ISSUE 1 - OCTOBER 2005
3
SEMICONDUCTORS
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Номер в каталоге | Описание | Производители |
ZXMN10B08E6 | N-CHANNEL ENHANCEMENT MODE MOSFET | Zetex Semiconductors |
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