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ZXMN10B08E6 PDF даташит

Спецификация ZXMN10B08E6 изготовлена ​​​​«Zetex Semiconductors» и имеет функцию, называемую «N-CHANNEL ENHANCEMENT MODE MOSFET».

Детали детали

Номер произв ZXMN10B08E6
Описание N-CHANNEL ENHANCEMENT MODE MOSFET
Производители Zetex Semiconductors
логотип Zetex Semiconductors логотип 

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ZXMN10B08E6 Даташит, Описание, Даташиты
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ZXMN10B08E6
100V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V(BR)DSS = 100V; RDS(ON) = 0.230 ID = 1.9A
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT23-6 package
APPLICATIONS
DC - DC Converters
Power Management Functions
Disconnect switches
Motor control
ORDERING INFORMATION
DEVICE
ZXMN10B08E6TA
ZXMN10B08E6TC
REEL
SIZE
7”
13”
TAPE QUANTITY
WIDTH PER REEL
8mm 3000 units
8mm 10000 units
DEVICE MARKING
10B8
SOT23-6
PINOUT
Top View
ISSUE 1 - OCTOBER 2005
1
SEMICONDUCTORS









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ZXMN10B08E6 Даташит, Описание, Даташиты
ZXMN10B08E6
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Gate Source Voltage
Continuous Drain Current VGS=10V; TA=25°C (b)
VGS=10V; TA=70°C (b)
VGS=10V; TA=25°C (a)
Pulsed Drain Current (c)
Continuous Source Current (Body Diode) (b)
Pulsed Source Current (Body Diode) (c)
Power Dissipation at TA=25°C (a)
Linear Derating Factor
Power Dissipation at TA=25°C (b)
Linear Derating Factor
Operating and Storage Temperature Range
SYMBOL
VDSS
VGS
ID
IDM
IS
ISM
PD
PD
Tj:Tstg
LIMIT
100
20
1.9
1.5
1.6
9
2.5
9
1.1
8.8
1.7
13.6
-55 to +150
UNIT
V
V
A
A
A
A
W
mW/°C
W
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
Junction to Ambient (a)
Junction to Ambient (b)
SYMBOL
RθJA
RθJA
VALUE
113
73
UNIT
°C/W
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at tр5 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300s - pulse width limited by maximum junction temperature. Refer to
Transient Thermal Impedance graph
ISSUE 1 - OCTOBER 2005
SEMICONDUCTORS
2









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ZXMN10B08E6 Даташит, Описание, Даташиты
CHARACTERISTICS
ZXMN10B08E6
ISSUE 1 - OCTOBER 2005
3
SEMICONDUCTORS










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Номер в каталогеОписаниеПроизводители
ZXMN10B08E6N-CHANNEL ENHANCEMENT MODE MOSFETZetex Semiconductors
Zetex Semiconductors

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