ZXTP25100BFH PDF даташит
Спецификация ZXTP25100BFH изготовлена «Zetex Semiconductors» и имеет функцию, называемую «PNP medium power transistor». |
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Детали детали
Номер произв | ZXTP25100BFH |
Описание | PNP medium power transistor |
Производители | Zetex Semiconductors |
логотип |
6 Pages
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ZXTP25100BFH
100V, SOT23, PNP medium power transistor
www.DataSheet4U.com
Summary
BV(BR)CEX > -140V, BV(BR)CEO > -100V
BV(BR)ECX > -7V ;
IC(cont) = -2A
VCE(sat) < -130mV @ -1A
RCE(sat) = 108m⍀ typical
PD = 1.25W
Complementary part number ZXTN25100BFH
Description
Advanced process capability and package design have been used to
maximize the power handling and performance of this small outline
transistor. The compact size and ratings of this device make it ideally
suited to applications where space is at a premium.
Features
• High power dissipation SOT23 package
• High peak current
• Low saturation voltage
• 140V forward blocking voltaget
• 7V reverse blocking voltage
Applications
• MOSFET and IGBT gate driving
• DC - DC converters
• Motor drive
• Relay, lamp, and solenoid drive
Ordering information
Device
Reel size
(inches)
ZXTP25100BFHTA
7
Tape width Quantity per reel
8mm
3,000
C
B
E
Pinout - top view
Device marking
056
Issue 1 - March 2006
© Zetex Semiconductors plc 2006
1
www.zetex.com
No Preview Available ! |
ZXTP25100BFH
Absolute maximum ratings
Parameter
Collector-base voltage
Collector-emitter voltage (forward blocking)
Collector-emitter voltage
Emitter-collector voltage (reverse blocking)
Emitter-base voltage
Continuous collector current (b)
Peak pulse current
Power dissipation at TA =25°C (a)
Linear derating factor
Power dissipation at TA =25°C (b)
Linear derating factor
Power dissipation at TA =25°C (c)
Linear derating factor
Power dissipation at TA =25°C (d)
Linear derating factor
Operating and storage temperature range
Symbol
VCBO
VCEX
VCEO
VECX
VEBO
IC
ICM
PD
PD
PD
PD
Tj, Tstg
Limit
-140
-140
-100
-7
-7
-2
-5
0.73
5.84
1.05
8.4
1.25
9.6
1.81
14.5
-55 to 150
Unit
V
V
V
V
V
A
A
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
°C
Thermal resistance
Parameter
Junction to ambient (a)
Junction to ambient (b)
Junction to ambient (c)
Junction to ambient (d)
Symbol
R⍜JA
R⍜JA
R⍜JA
R⍜JA
Limit
171
119
100
69
Unit
°C/W
°C/W
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(d) As (c) above measured at t<5secs.
Issue 1 - March 2006
© Zetex Semiconductors plc 2006
2
www.zetex.com
No Preview Available ! |
Characteristics
ZXTP25100BFH
Issue 1 - March 2006
© Zetex Semiconductors plc 2006
3
www.zetex.com
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Номер в каталоге | Описание | Производители |
ZXTP25100BFH | PNP medium power transistor | Zetex Semiconductors |
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