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Número de pieza | ZXMC3A17DN8 | |
Descripción | COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET | |
Fabricantes | Zetex Semiconductors | |
Logotipo | ||
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ZXMC3A17DN8
COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
SUMMARY
N-Channel : V(BR)DSS= 30V : RDS(on)= 0.050 ; ID= 5.4A
P-Channel : V(BR)DSS= -30V : RDS(on)= 0.070 ; ID= -4.4A
DESCRIPTION
This new generation of trench MOSFETs from Zetex utilizes a unique structure that
combines the benefits of low on-resistance with fast switching speed. This makes
them ideal for high efficiency, low voltage, power management applications.
FEATURES
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• Low profile SOIC package
APPLICATIONS
• Motor drive
• LCD backlighting
Q1 = N-channel
ORDERING INFORMATION
DEVICE
ZXMC3A17DN8TA
ZXMC3A17DN8TC
REEL SIZE
7”
13”
TAPE WIDTH
12mm
12mm
QUANTITY PER REEL
500 units
2500 units
DEVICE MARKING
• ZXMC
3A17
SO8
Q2 = P-channel
PINOUT
Top View
ISSUE 1 - OCTOBER 2005
1
SEMICONDUCTORS
1 page ADVANCE INFORMATION
ZXMC3A17DN8
P-CHANNEL
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
STATIC
Drain-Source Breakdown
Voltage
V(BR)DSS
-30
V ID= -250A, VGS=0V
Zero Gate Voltage Drain
Current
IDSS
-1.0 A
VDS= -30V, VGS=0V
Gate-Body Leakage
Gate-Source Threshold
Voltage
IGSS
VGS(th)
-1.0
100 nA
V
VGS=±20V, VDS=0V
ID= -250A, VDS=VGS
Static Drain-Source
On-State Resistance (1)
Forward
Transconductance (1) (3)
DYNAMIC (3)
RDS(on)
gfs
0.070
0.110
⍀
⍀
6.4 S
VGS= -10V, ID= -3.2A
VGS= -4.5V, ID= -2.5A
VDS= -15V, ID= -3.2A
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
SWITCHING (2) (3)
Ciss
Coss
Crss
630 pF
113 pF VDS= -15V, VGS=0V
78 pF f=1MHz
Turn-On-Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
td(on)
tr
td(off)
tf
Qg
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Qg
Qgs
Qgd
VSD
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
trr
Qrr
1.7
2.9
29.2
8.7
8.3
15.8
1.8
2.8
ns
ns
ns
ns
nC
nC
nC
nC
-0.85 -0.95
V
19.5
16.3
ns
nC
VDD= -15V, ID= -1A
RG ≅ 6.0⍀,
VGS= -10V
VDS= -15V, VGS= -5V
ID= -3.2A
VDS= -15V, VGS=
-10V
ID= -3.2A
Tj=25°C, IS= -2.5A,
VGS=0V
Tj=25°C, IS= -1.7A,
di/dt=100A/s
NOTES:
(1) Measured under pulsed conditions. Pulse width Յ 300ms; Duty cycle Յ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - OCTOBER 2005
5
SEMICONDUCTORS
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet ZXMC3A17DN8.PDF ] |
Número de pieza | Descripción | Fabricantes |
ZXMC3A17DN8 | COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET | Zetex Semiconductors |
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