PDF ZXMC3A17DN8 Data sheet ( Hoja de datos )

Número de pieza	ZXMC3A17DN8
Descripción	COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
Fabricantes	Zetex Semiconductors
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No Preview Available ! www.DataSheet4U.com ZXMC3A17DN8 COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET SUMMARY N-Channel : V(BR)DSS= 30V : RDS(on)= 0.050 ; ID= 5.4A P-Channel : V(BR)DSS= -30V : RDS(on)= 0.070 ; ID= -4.4A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • Low profile SOIC package APPLICATIONS • Motor drive • LCD backlighting Q1 = N-channel ORDERING INFORMATION DEVICE ZXMC3A17DN8TA ZXMC3A17DN8TC REEL SIZE 7” 13” TAPE WIDTH 12mm 12mm QUANTITY PER REEL 500 units 2500 units DEVICE MARKING • ZXMC 3A17 SO8 Q2 = P-channel PINOUT Top View ISSUE 1 - OCTOBER 2005 1 SEMICONDUCTORS 1 page ADVANCE INFORMATION ZXMC3A17DN8 P-CHANNEL ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS STATIC Drain-Source Breakdown Voltage V(BR)DSS -30 V ID= -250␮A, VGS=0V Zero Gate Voltage Drain Current IDSS -1.0 ␮A VDS= -30V, VGS=0V Gate-Body Leakage Gate-Source Threshold Voltage IGSS VGS(th) -1.0 100 nA V VGS=±20V, VDS=0V ID= -250␮A, VDS=VGS Static Drain-Source On-State Resistance (1) Forward Transconductance (1) (3) DYNAMIC (3) RDS(on) gfs 0.070 0.110 ⍀ ⍀ 6.4 S VGS= -10V, ID= -3.2A VGS= -4.5V, ID= -2.5A VDS= -15V, ID= -3.2A Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING (2) (3) Ciss Coss Crss 630 pF 113 pF VDS= -15V, VGS=0V 78 pF f=1MHz Turn-On-Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge td(on) tr td(off) tf Qg Total Gate Charge Gate-Source Charge Gate Drain Charge SOURCE-DRAIN DIODE Diode Forward Voltage (1) Qg Qgs Qgd VSD Reverse Recovery Time (3) Reverse Recovery Charge (3) trr Qrr 1.7 2.9 29.2 8.7 8.3 15.8 1.8 2.8 ns ns ns ns nC nC nC nC -0.85 -0.95 V 19.5 16.3 ns nC VDD= -15V, ID= -1A RG ≅ 6.0⍀, VGS= -10V VDS= -15V, VGS= -5V ID= -3.2A VDS= -15V, VGS= -10V ID= -3.2A Tj=25°C, IS= -2.5A, VGS=0V Tj=25°C, IS= -1.7A, di/dt=100A/␮s NOTES: (1) Measured under pulsed conditions. Pulse width Յ 300ms; Duty cycle Յ 2%. (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE 1 - OCTOBER 2005 5 SEMICONDUCTORS 5 Page

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