DataSheet26.com

NL17SZ16 PDF даташит

Спецификация NL17SZ16 изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Single Input Buffer».

Детали детали

Номер произв NL17SZ16
Описание Single Input Buffer
Производители ON Semiconductor
логотип ON Semiconductor логотип 

6 Pages
scroll

No Preview Available !

NL17SZ16 Даташит, Описание, Даташиты
NL17SZ16
Single Input Buffer
The NL17SZ16 is a single input Buffer in two tiny footprint
packages. The device performs much as LCX multi−gate products in
speed and drive.
Features
Tiny SOT−353 and SOT−553 Packages
Source/Sink 24 mA at 3.0 Volts
Over−Voltage Tolerant Inputs and Outputs
Chip Complexity: FETs = 20
Designed for 1.65 V to 5.5 V VCC Operation
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
NC 1
A2
GND 3
5 VCC
4Y
Figure 1. Pinout (Top View)
A 1Y
Figure 2. Logic Symbol
www.onsemi.com
5
1
SC−88A
(SC−70−5/SOT−353)
DF SUFFIX
CASE 419A
MARKING
DIAGRAMS
LR MG
G
5
1
SOT−553
XV5 SUFFIX
CASE 463B
5
LR M G
G
1
LR = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or position may vary
depending upon manufacturing location.
PIN ASSIGNMENT
Pin Function
1 NC
2 IN A
3 GND
4 OUT Y
5 VCC
FUNCTION TABLE
A Input
L
H
Y Output
L
H
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
November, 2015 − Rev. 11
1
Publication Order Number:
NL17SZ16/D









No Preview Available !

NL17SZ16 Даташит, Описание, Даташиты
NL17SZ16
MAXIMUM RATINGS
Symbol
Parameter
Value
Units
VCC
VI
VO
IIK
IOK
IOUT
ICC
IGND
TSTG
TL
TJ
qJA
DC Supply Voltage
DC Input Voltage
Output in High or Low State (Note 2)
DC Output Voltage
DC Input Diode Current
DC Output Diode Current
VI < GND
VO < GND
DC Output Sink Current
DC Supply Current per Supply Pin
DC Ground per Supply Pin
Storage Temperature Range
Lead Temperature, 1 mm from Case for 10 Seconds
Junction Temperature Under Bias
Thermal Resistance
SOT−353
SOT−553
−0.5 to +7.0
−0.5 VI +7.0
−0.5 VO +7.0
−50
−50
±50
±100
±100
−65 to +150
260
+150
350
360
V
V
V
mA
mA
mA
mA
mA
°C
°C
°C
°C/W
PD Power Dissipation in Still Air at 85°C
SOT−353
SOT−553
150
180
mW
MSL Moisture Sensitivity
Level 1
FR
ESD
Flammability Rating
ESD Classification
Oxygen Index: 28 to 34
Human Body Model (Note 3)
Machine Model (Note 4)
Charged Device Model (Note 5)
UL 94 V−0 @ 0.125 in
2000
200
N/A
V
ILatchup Latchup Performance
Above VCC and Below GND at 85°C (Note 6)
$100
mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2−ounce copper trace with no air flow.
2. IO Absolute Maximum Rating Must be Obtained.
3. Tested to EIA/JESD22−A114−A, rated to EIA/JESD22−A114−B.
4. Tested to EIA/JESD22−A115−A, rated to EIA/JESD22−A115−A.
5. Tested to JESD22−C101−A.
6. Tested to EIA/JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min Max Units
VCC DC Supply Voltage
Operations Only
Data Retention
1.65
1.5
5.5 V
5.5
VIN DC Input Voltage
0 5.5 V
VOUT DC Output Voltage
0 5.5 V
TA Operating Temperature Range
−55
+125
°C
tr, tf Input Rise and Fall Time
VCC = 2.5 V ±0.2 V
VCC = 3.0 V ±0.3 V
VCC = 5.0 V ±0.5 V
0
0
0
20 ns/V
10
5
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
www.onsemi.com
2









No Preview Available !

NL17SZ16 Даташит, Описание, Даташиты
NL17SZ16
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
Junction
Temperature °C
Time, Hours
Time, Years
80
1,032,200
117.8
90
419,300
47.9
100 178,700 20.4
110 79,600
9.4
120 37,000
130 17,800
4.2
2.0
140 8,900
1.0
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
1
1 10
100 1000
TIME, YEARS
Figure 3. Failure Rate vs. Time Junction Temperature
DC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Condition
VCC
TA = 255C
−555C 3 TA 3 1255C
(V) Min Typ Max Min Max Units
VIH High−Level Input Voltage
1.65 to 1.95 0.75 VCC
2.3 to 5.5 0.7 VCC
0.75 VCC
0.7 VCC
V
VIL Low−Level Input Voltage
1.65 to 1.95
2.3 to 5.5
0.25 VCC
0.3 VCC
0.25 VCC
0.3 VCC
V
VOH
High−Level Output Voltage
VIN = VIL or VIH
IOH = −100 mA
IOH = −3 mA
IOH = −8 mA
IOH = −12 mA
IOH = −16 mA
IOH = −24 mA
IOH = −32 mA
1.65 to 5.5
1.65
2.3
2.7
3.0
3.0
4.5
VCC − 0.1
1.29
1.9
2.2
2.4
2.3
3.8
VCC
1.52
2.1
2.4
2.7
2.5
4.0
VCC − 0.1
1.29
1.9
2.2
2.4
2.3
3.8
V
VOL Low−Level Output Voltage IOL = 100 mA
VIN = VIH or VOH
IOL = 4 mA
IOL = 8 mA
IOL = 12 mA
IOL = 16 mA
IOL = 24 mA
IOL = 32 mA
1.65 to 5.5
1.65
2.3
2.7
3.0
3.0
4.5
0.0 0.1
0.08 0.24
0.20 0.3
0.22 0.4
0.28 0.4
0.38 0.55
0.42 0.55
0.1 V
0.24
0.3
0.4
0.4
0.55
0.55
IIN Input Leakage Current
VIN = 5.5 V or GND 0 to 5.5
±0.1 ±1.0 mA
IOFF Power Off Leakage
Current
VIN = 5.5 V or
VOUT = 5.5 V
0
1 10 mA
ICC Quiescent Supply Current VIN = 5.5 V or GND
5.5
1 10 mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
AC ELECTRICAL CHARACTERISTICS tR = tF = 3.0 ns
Symbol
tPLH
tPHL
Parameter
Propagation Delay
(Figure 4 and 5)
Condition
RL = 1 MW, CL = 15 pF
RL = 500 W, CL = 50 pF
VCC
(V)
1.65
1.8
2.5 ± 0.2
3.3 ± 0.3
5.0 ± 0.5
3.3 ± 0.3
5.0 ± 0.5
TA = 255C
Min Typ Max
2.0 5.3 11.4
2.0 4.4 9.5
0.8 2.9 6.5
0.5 2.1 4.5
0.5 1.8 3.9
1.5 2.9 5.0
0.8 2.4 4.3
−555C 3 TA 3 1255C
Min Max
2.0 12
2.0 10
0.8 7.0
0.5 4.7
0.5 4.1
1.5 5.2
0.8 4.5
Units
ns
www.onsemi.com
3










Скачать PDF:

[ NL17SZ16.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
NL17SZ125Non-Inverting 3-State BufferON Semiconductor
ON Semiconductor
NL17SZ126Non-Inverting 3-State BufferON Semiconductor
ON Semiconductor
NL17SZ14Single Inverter with Schmitt TriggerON
ON
NL17SZ14Single InverterON Semiconductor
ON Semiconductor

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск