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PDF NLASB3157 Data sheet ( Hoja de datos )
| Número de pieza | NLASB3157 | |
| Descripción | SPDT / 3 ohm RON Switch | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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NLASB3157
SPDT, 3 W RON Switch
The NLASB3157 is an advanced CMOS analog switch fabricated
with silicon gate CMOS technology. It achieves very low
propagation delay and RDSON resistances while maintaining CMOS
low power dissipation. Analog and digital voltages that may vary
across the full power−supply range (from VCC to GND). This device
is a drop in replacement for the NC7SB3157.
The select pin has overvoltage protection that allows voltages
above VCC, up to 7.0 V to be present on the pin without damage or
disruption of operation of the part, regardless of the operating
voltage.
Features
• High Speed: tPD = 1.0 ns (Typ) at VCC = 5.0 V
• Low Power Dissipation: ICC = 2.0 mA (Max) at TA = 25°C
• Standard CMOS Logic Levels
• High Bandwidth, Improved Linearity
• Switches Standard NTSC/PAL Video, Audio, SPDIF and HDTV
• May be used for Clock Switching, Data Multiplexing, etc.
• RON Typical = 3 W @ VCC = 4.5 V
• Break Before Make Circuitry, Prevents Inadvertent Shorts
• 2 Devices can Switch Balanced Signal Pairs,
www.DataSheet4U.com e.g. LVDS u 200−Mb/s
• Latchup Performance Exceeds 300 mA
• Pin for Pin Drop in for NC7SB3157
• Tiny SC88 and WDFN6 Packages
• ESD Performance:
♦ Human Body Model; u 2000 V;
♦ Machine Model; u 200 V
• Extended Automotive Temperature Range −55°C to +125°C
(See Appendix)
• Pb−Free Packages are Available
http://onsemi.com
MARKING
DIAGRAMS
6
1
SC−88
DF SUFFIX
CASE 419B
AF MG
G
WDFN6
MT SUFFIX
CASE 506AS
FM
G
AF, F = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
FUNCTION TABLE
Select Input
Function
L B0 Connected to A
H B1 Connected to A
ORDERING INFORMATION
Device
Package Shipping†
NLASB3157DFT2 SC−88 3000 Tape & Reel
NLASB3157DFT2G SC−88 3000 Tape & Reel
(Pb−Free)
NLASB3157MTR2G WDFN6 3000 Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
November, 2006 − Rev. 9
1
Publication Order Number:
NLASB3157/D
1 page  
NLASB3157
APPENDIX A
DC ELECTRICAL EXTENDED AUTOMOTIVE TEMPERATURE RANGE CHARACTERISTICS
Symbol
Parameter
Test Conditions
VCC
TA = +255C
TA = −555C to +1255C
(V)
Min Typ Max
Min
Max Unit
VIH HIGH Level
Input Voltage
VIL LOW Level
Input Voltage
IIN Input Leakage Current 0 v VIN v 5.5 V
IOFF OFF State Leakage 0 v A, B v VCC
Current
1.65−1.95
2.3−5.5
1.65−1.95
2.3−5.5
0−5.5
1.65−5.5
0.75 VCC
0.7 VCC
"0.05 "0.1
"0.05 "0.1
0.25 VCC
0.3 VCC
"1
"1
V
V
mA
mA
RON
ICC
Switch On Resistance
(Note 12)
Quiescent Supply
Current
All Channels ON or
OFF
VIN = 0 V, IO = 30 mA
VIN = 2.4 V, IO = −30 mA
VIN = 4.5 V, IO = −30 mA
VIN = 0 V, IO = 24 mA
VIN = 3 V, IO = −24 mA
VIN = 0 V, IO = 8 mA
VIN = 2.3 V, IO = −8 mA
VIN = 0 V, IO = 4 mA
VIN = 1.65 V, IO = −4 mA
VIN = VCC or GND
IOUT = 0
4.5
3.0
2.3
1.65
5.5
3.0
5.0
7.0
4.0
10
5.0
13
6.5
17
1.0
8.5 W
13.0
15.0
11
20
12
30
20
50
10 mA
Analog Signal Range
RRANGE On Resistance
Over Signal Range
(Note 12) (Note 14)
IA = −30 mA, 0 v VBn v VCC
IA = −24 mA, 0 v VBn v VCC
IA = −8 mA, 0 v VBn
v VCC
IA = −4 mA, 0 v VBn
v VCC
VCC
4.5
3.0
2.3
1.65
0
VCC
0
VCC
V
25 W
50
100
300
12. Measured by the voltage drop between A and B pins at the indicated current through the switch. On Resistance is determined by the lower
of the voltages on the two (A or B Ports).
13. Flatness is defined as the difference between the maximum and minimum value of On Resistance over the specified range of conditions.
14. Guaranteed by Design.
* For DRON, RFLAT, Q, OIRR, Xtalk, BW, THD, and CIN see −405C to 855C section.
http://onsemi.com
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